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    • 2. 发明申请
    • GENERALIZED POSITIONAL ORDERING
    • 一般定位
    • US20120260047A1
    • 2012-10-11
    • US13081251
    • 2011-04-06
    • Jonathan W. HainesTimothy R. FeldmanWayne H. Vinson
    • Jonathan W. HainesTimothy R. FeldmanWayne H. Vinson
    • G06F12/00
    • G06F3/06G06F3/0613G06F3/0659G06F3/0676G06F13/16
    • Implementations described and claimed herein provide a method and system for managing execution of commands for a storage device, the method comprising determining a plurality of commands to be executed for the storage device and while a storage device is executing at least one command, determining an execution order for at least two of the plurality of commands. Alternate implementation described and claimed herein provide a computer readable memory for storing a data structure, the data structure comprising a cost table comprising a number of cells, each cell containing one or more cost values related to one of a plurality of traversals between two locations on a storage device wherein each of the plurality of traversals is related to completion of one of a plurality of commands and a benefit array comprising a number of cells, each cell containing a benefit value related to completion of one of the plurality of commands.
    • 本文描述和要求保护的实施例提供了一种用于管理存储设备的命令的执行的方法和系统,所述方法包括确定要为存储设备执行的多个命令以及当存储设备正在执行至少一个命令时,确定执行 命令多个命令中的至少两个。 本文描述和要求保护的替代实现提供了一种用于存储数据结构的计算机可读存储器,该数据结构包括包括多个单元的成本表,每个单元包含与两个位置之间的多个遍历之一相关的一个或多个成本值 存储装置,其中所述多个遍历中的每一个与多个命令中的一个的完成相关,以及包括多个单元的益处阵列,每个单元包含与所述多个命令之一的完成相关的益处值。
    • 10. 发明授权
    • Low-wear writing in a solid state memory device
    • 低磨损写入固态存储器件
    • US08009471B2
    • 2011-08-30
    • US12638830
    • 2009-12-15
    • Jonathan W. HainesTong Shirh StoneBrett Alan Cook
    • Jonathan W. HainesTong Shirh StoneBrett Alan Cook
    • G11C16/04
    • G11C11/5628G11C16/0483G11C2211/5641
    • A method includes programming a non-volatile memory. The memory includes a plurality of cells, wherein each cell is configured to store a plurality of values, wherein each of value is represented by N digits where N is an integer greater than 1, wherein each of the plurality of cells is further configured to store electric charge representing a plurality of voltage levels, and wherein each of the plurality of voltage levels represents one of the plurality of values. Programming comprises providing the plurality of voltage levels into a first group of voltage levels and a second group of voltage levels in one of the plurality of cells, wherein a highest voltage level of the first group is less than or substantially equal to a lowest voltage level of the second group, and storing, in the first group of voltage levels, electric charge representing a value comprising, at most, N-1 digits.
    • 一种方法包括对非易失性存储器进行编程。 存储器包括多个单元,其中每个单元被配置为存储多个值,其中每个值由N个数字表示,其中N是大于1的整数,其中多个单元中的每一个还被配置为存储 电荷表示多个电压电平,并且其中所述多个电压电平中的每一个表示所述多个值中的一个。 编程包括将多个电压电平提供到第一组电压电平和多个电池之一中的第二组电压电平,其中第一组的最高电压电平小于或基本上等于最低电压电平 并且在第一组电压电平中存储表示包括至多N-1个数字的值的电荷。