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    • 1. 发明申请
    • TEST PROBES
    • 测试问题
    • US20140239995A1
    • 2014-08-28
    • US13976448
    • 2011-12-31
    • Roy E. SwartWarren S. CrippenCharlotte C. KwongDavid Shia
    • Roy E. SwartWarren S. CrippenCharlotte C. KwongDavid Shia
    • G01R1/067
    • G01R1/06711G01R1/07357G01R3/00
    • The formation of test probe structures is described. One test probe structure includes a tip portion and a handle portion spaced a distance away from the tip portion. The test probe structure also includes a body bend portion positioned between the tip portion and the handle portion, and an intermediate portion positioned between the body bend portion and the handle portion. The body bend portion may include a curved shape extending from the intermediate portion to the tip portion. The tip portion may be formed to be offset from a longitudinal axis defined by the intermediate portion. The test probe structure defines a length and includes a cross-sectional area that is different at a plurality of positions along the length. Other embodiments are described and claimed.
    • 描述了测试探针结构的形成。 一个测试探针结构包括尖端部分和与尖端部分间隔开距离的手柄部分。 测试探针结构还包括位于尖端部分和手柄部分之间的身体弯曲部分,以及位于身体弯曲部分和手柄部分之间的中间部分。 身体弯曲部分可以包括从中间部分延伸到尖端部分的弯曲形状。 尖端部分可以形成为从由中间部分限定的纵向轴线偏移。 测试探针结构限定长度并且包括在沿着长度的多个位置处不同的横截面面积。 描述和要求保护其他实施例。
    • 7. 发明授权
    • Composite wire probes for testing integrated circuits
    • 用于测试集成电路的复合线探头
    • US09207258B2
    • 2015-12-08
    • US13631599
    • 2012-09-28
    • David ShiaTodd P. AlbertsonKip P. Stevenson
    • David ShiaTodd P. AlbertsonKip P. Stevenson
    • G01R1/067G01R31/26G01R3/00G01R31/28
    • G01R1/06761G01R3/00G01R31/2886
    • An electrical probe of an aspect includes a high yield strength wire core. The high yield strength wire core includes predominantly one or more materials selected from tungsten, tungsten-copper alloy, tungsten-nickel alloy, beryllium-copper alloy, molybdenum, stainless steel, and combinations thereof. The high mechanical strength wire core has a yield strength of at least 1 gigapascal (GPa) at temperature of 250° C. The electrical probe also includes a low electrical resistivity layer concentrically around the high yield strength wire core. The concentric layer includes predominantly one or more materials selected from silver, gold, copper, and combinations thereof. The low electrical resistivity layer has an electrical resistivity of no more than 2×10−8 Ohm-meters. The electrical probe has an outer cross-sectional dimension of the electrical probe that is no more than 50 micrometers. Between 60 to 85% of the outer cross-sectional dimension is provided by the high mechanical strength wire core. Between 10 to 30% of the outer cross-sectional dimension is provided by the low electrical resistivity layer.
    • 一个方面的电探针包括高屈服强度的线芯。 高屈服强度线芯主要包括选自钨,钨 - 铜合金,钨 - 镍合金,铍 - 铜合金,钼,不锈钢及其组合中的一种或多种材料。 高机械强度线芯在250℃的温度下具有至少1千兆帕(GPa)的屈服强度。电探针还包括围绕高屈服强度线芯同心的低电阻率层。 同心层主要包括一种或多种选自银,金,铜及其组合的材料。 低电阻率层的电阻率不超过2×10-8欧姆米。 电探针具有不大于50微米的电探针的外横截面尺寸。 外横截面尺寸的60%至85%是由高机械强度线芯提供的。 外部横截面尺寸的10至30%由低电阻率层提供。
    • 8. 发明授权
    • Positioning and socketing for semiconductor dice
    • 半导体芯片的定位和插槽
    • US08797053B2
    • 2014-08-05
    • US13114876
    • 2011-05-24
    • Michael L. RutiglianoEric J. M. MoretDavid Shia
    • Michael L. RutiglianoEric J. M. MoretDavid Shia
    • G01R31/00G01R1/073
    • G01R1/0735G01R31/2891
    • Devices and methods useful for testing bare and packaged semiconductor dice are provided. As integrated circuit chips become smaller and increasingly complex, the interface presented by a chip for connectivity with power supplies and other components of the system into which it is integrated similarly becomes smaller and more complex. Embodiments of the invention provide micron-scale accuracy alignment capabilities for fine pitch device first level interconnect areas. Embodiments of the invention employ air-bearings to effectuate the movement and alignment of a device under test with a testing interface. Additionally, testing interfaces comprising membranes supported by thermal fluids are provided.
    • 提供了用于测试裸机和封装的半导体晶片的器件和方法。 随着集成电路芯片变得越来越小,并且越来越复杂,与芯片的电源和系统的其他组件的连接的接口所呈现的接口也变得越来越小,越来越复杂。 本发明的实施例提供了用于细间距器件第一级互连区域的微米级精度对准能力。 本发明的实施例采用空气轴承来实现被测设备的移动和对准与测试界面。 另外,提供了包括由热流体支撑的膜的测试界面。
    • 9. 发明申请
    • COMPOSITE WIRE PROBE TEST ASSEMBLY
    • 复合线探头测试总成
    • US20140176172A1
    • 2014-06-26
    • US13725255
    • 2012-12-21
    • Kip StevensonTodd P. AlbertsonDavid ShiaKamil Salloum
    • Kip StevensonTodd P. AlbertsonDavid ShiaKamil Salloum
    • G01R31/28
    • G01R1/06755G01R3/00G01R31/26G01R31/2886
    • An examples includes a substrate, including a conductive trace and a layer disposed on top of the conductive trace, the layer defining at least one cavity extending to the conductive trace and an electrical probe disposed in the cavity, with solder coupling the electrical probe to the conductive trace. The electrical probe can include a high yield strength wire core including a refractory metal and a thin oxidation protection layer concentrically disposed around high yield strength wire core and providing an outside surface of the electrical probe, the thin oxidation protection layer including predominantly one or more materials selected from gold, platinum, ruthenium, rhodium, palladium, osmium, iridium, chromium, and combinations thereof, wherein the solder fills the cavity and is coupled to the electrical probe inside the cavity, disposed between the electrical probe and the layer.
    • 示例包括基板,其包括导电迹线和设置在导电迹线顶部上的层,该层限定延伸到导电迹线的至少一个空腔和设置在该空腔中的电探针,焊料将电探针耦合到 导电痕迹 电探针可以包括高屈服强度的线芯,包括耐火金属和同心地设置在高屈服强度线芯周围的薄氧化保护层,并提供电探针的外表面,薄氧化保护层主要包括一种或多种材料 选自金,铂,钌,铑,钯,锇,铱,铬及其组合,其中焊料填充空腔并且耦合到设置在电探针和层之间的腔内的电探针。