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1. 发明授权

US07339791B2 CVD diamond enhanced microprocessor cooling system 失效
标题翻译： CVD金刚石增强微处理器冷却系统
公开(公告)号：US07339791B2
公开(公告)日：2008-03-04
申请号：US10466377
申请日：2002-01-18
申请人： David S. Hoover , Ronald R. Petkie
发明人： David S. Hoover , Ronald R. Petkie
IPC分类号： H05K7/20
CPC分类号： H01L23/467 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Cooling systems for microprocessors are addressed. Some systems may include a chemical vapor deposited (CVD) diamond heatspreader mounted to a base of a heat sink and to a microprocessor chip, while others may include a copper insert mounted within a depression of a heat sink, with the CVD diamond heatspreader mounted within an indent of the insert.
摘要翻译：解决微处理器的冷却系统。一些系统可以包括安装到散热器的基座和微处理器芯片的化学气相沉积（CVD）金刚石散热器，而其它系统可以包括安装在散热器的凹陷部内的铜插入件，CVD金刚石散热器安装在插入的缩进。

2. 发明授权

US06723420B2 Thick film paste systems for circuits on diamond substrates 失效
标题翻译：用于金刚石衬底电路的厚膜贴剂系统
公开(公告)号：US06723420B2
公开(公告)日：2004-04-20
申请号：US10119073
申请日：2002-04-09
申请人： Ronald R. Petkie
发明人： Ronald R. Petkie
IPC分类号： B32B1500
CPC分类号： H01C7/003 , H01C17/06533 , H01C17/0658 , H01L23/3732 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , Y10T428/30 , H01L2924/00
摘要： This invention relates to the nature of thick film compositions that are specifically designed for the fabrication of circuit elements on diamond substrates, especially resistive elements. The nature of diamond sheet material requires special consideration because of its relatively low coefficient of thermal expansion and its sensitivity to oxygen at elevated processing temperatures. The general compositional requirements of thick film paste formulations are provided as a basis for accommodating the particular physical properties of diamond, and thereby establishing a method by which high performance microelectronic components can be fabricated economically. Thick film pastes containing certain borosilicate glasses, metal components, and optionally semiconducting materials are demonstrated to possess favorable behavior in terms of mechanical and electrical properties after sintering. Resistive elements on diamond can be fabricated by adding conductive components to a borosilicate glass.
摘要翻译：本发明涉及专门设计用于在金刚石衬底，特别是电阻元件上制造电路元件的厚膜组合物的性质。金刚石片材的性质需要特别考虑，因为它在较高的加工温度下具有较低的热膨胀系数和对氧的敏感性。提供厚膜糊制剂的一般组成要求作为适应金刚石的特定物理性质的基础，从而建立经济地制造高性能微电子元件的方法。证明含有某些硼硅酸盐玻璃，金属组分和任选的半导体材料的厚膜糊在烧结后的机械和电学性能方面具有良好的性能。可以通过向硼硅酸盐玻璃中加入导电组分来制造金刚石上的电阻元件。

3. 发明授权

US06531226B1 Brazeable metallizations for diamond components 失效
标题翻译：用于金刚石组件的可钎焊金属化
公开(公告)号：US06531226B1
公开(公告)日：2003-03-11
申请号：US09584762
申请日：2000-05-30
申请人： Ronald R. Petkie
发明人： Ronald R. Petkie
IPC分类号： B32B900
CPC分类号： C04B41/009 , B23K35/001 , B32B2311/12 , B32B2311/30 , C04B35/52 , C04B37/006 , C04B37/026 , C04B41/52 , C04B41/89 , C04B2111/00844 , C04B2111/00965 , C04B2235/427 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/32 , C04B2237/363 , C04B2237/40 , C04B2237/401 , C04B2237/403 , C04B2237/406 , C04B2237/407 , C04B2237/62 , C04B2237/704 , C04B2237/708 , C04B2237/72 , H01L23/3732 , H01L24/29 , H01L24/83 , H01L2224/29111 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/351 , Y10T428/12771 , Y10T428/12806 , Y10T428/12812 , Y10T428/12826 , Y10T428/12833 , Y10T428/1284 , Y10T428/12847 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678 , C04B41/4529 , C04B41/5133 , C04B41/524 , C04B41/5127 , C04B41/5116 , C04B41/522 , C04B41/0072 , C04B41/5346 , C04B41/5105 , H01L2924/01022 , H01L2924/00015 , H01L2924/00
摘要： A multilayer brazeable metallization structure for diamond components is described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including a first layer of chromium for adhesion, a second barrier layer of a refractory metal for a barrier that may be alloyed with chromium, and a top layer of copper, silver or gold for wetting. The refractory metals for the second layer include tungsten, molybdenum, tantalum and niobium. Tungsten or tungsten-chromium alloy is preferred as the second layer. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten. The interfacial adhesion between the metallization and the diamond is sufficient to withstand exposure to brazing at temperatures less than or equal to 1100° C. in inert gas atmospheres that may contain hydrogen.
摘要翻译：描述了用于金刚石部件的多层可钎焊金属化结构。可钎焊金属化特别适用于将金属部件如散热器安装在并入大功率半导体器件的电子封装中。在本发明中，金刚石组件设置有金属的多层涂层，包括用于粘合的第一铬层，用于与铬合金化的阻挡层的难熔金属的第二阻挡层和铜的顶层，银或金润湿。第二层的难熔金属包括钨，钼，钽和铌。作为第二层，优选钨或钨 - 铬合金。这种多层金属化结构提供了金刚石和标准钎焊合金之间的牢固界面，这些钎焊合金用于将金刚石连接到电引线或由诸如铜 - 钨的金属制成的凸缘。在可能含有氢的惰性气体气氛中，金属化和金刚石之间的界面粘合足以承受暴露在低于或等于1100℃的温度下的钎焊。

4. 发明申请

US20140315345A1 Methods For Thick Films Thermoelectric Device Fabrication 有权
标题翻译：厚膜方法热电装置制造
公开(公告)号：US20140315345A1
公开(公告)日：2014-10-23
申请号：US14170544
申请日：2014-01-31
申请人： Ronald R. Petkie
发明人： Ronald R. Petkie
IPC分类号： H01L35/34
CPC分类号： H01L35/32 , C23C24/082 , C23C28/00 , C23C30/00 , H01L35/16 , H01L35/18 , H01L35/34
摘要： Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates.
摘要翻译：固态热电能量转换装置可以从热流提供电能，产生能量，或相反地通过施加能量提供冷却。应用厚膜方法来制造使用通过沉积和随后的热处理条件形成的微结构的热电装置结构。材料性质的有利重合使得可以容易地应用于制造器件结构的各种独特的微结构。例如，通过印刷和随后的热加工来施加直接粘合工艺以在基底上制造热电半导体厚膜以形成可以致密化的独特的微结构。铋和锑直接粘合到柔性镍基底上。

5. 发明授权

US07125440B2 Composite structure for high efficiency hydrogen separation and its associated methods of manufacture and use 失效
标题翻译：用于高效氢分离的复合结构及其相关制造和使用方法
公开(公告)号：US07125440B2
公开(公告)日：2006-10-24
申请号：US10770732
申请日：2004-02-02
申请人： Peter R. Bossard , Ronald R. Petkie
发明人： Peter R. Bossard , Ronald R. Petkie
IPC分类号： B01D53/22 , B01D71/02
CPC分类号： B01D67/0072 , B01D53/228 , B01D69/10 , B01D71/022 , B01D2325/04 , C01B3/505 , C01B2203/0405 , Y10S55/05
摘要： A hydrogen purification system and method that utilizes a hydrogen separator with a novel composite structure. The hydrogen separator has a first porous layer of a hydrogen permeable material, such as a palladium alloy. A solid layer of the same hydrogen permeable material is then disposed onto the first porous layer. A pressure differential is created across the structure of the composite hydrogen separator. The porous layer of hydrogen permeable material supports the solid layer and enables the solid layer to withstand large pressure differentials. Furthermore, the porous layer of the hydrogen permeable material bonds to the solid layer, thereby greatly increasing the effective surface area of the solid layer that is exposed to hydrogen gas. Accordingly, a large flow rate of hydrogen gas can be obtained in a small amount of space.
摘要翻译：一种利用新型复合结构的氢气分离器的氢气净化系统和方法。氢分离器具有氢可渗透材料的第一多孔层，例如钯合金。然后将相同氢可渗透材料的固体层设置在第一多孔层上。跨越复合氢气分离器的结构产生压力差。氢可渗透材料的多孔层支撑固体层，使得固体层能承受较大的压力差。此外，氢可渗透材料的多孔层与固体层结合，从而大大增加暴露于氢气的固体层的有效表面积。因此，能够以少量的空间获得大的氢气流量。

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