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    • 2. 发明授权
    • Circuit to linearize gain of a voltage controlled oscillator over wide frequency range
    • 电路在宽频率范围内线性化压控振荡器的增益
    • US07030669B2
    • 2006-04-18
    • US10779891
    • 2004-02-17
    • Ronald B. HulfachorJames J. McDonald, II
    • Ronald B. HulfachorJames J. McDonald, II
    • H03L7/06
    • H03K3/0322H03L7/0995
    • A voltage controlled oscillator circuit is shown using multiple delay stages with the last stage looped back out of phase to the first stage. Each stage delay is formed by charging one or more capacitors. The circuitry uses active components demonstrating a square law relationship between a control voltage and a resulting current. The current is ultimately used to charge the delay capacitor. The net effect is a linear relationship of the VCO frequency and an input control voltage. The range of the linear relationship is extended by using square law current sources to provide suitable currents that extend the linear range when other active devices are no longer supporting the square law relationship. In addition bipolar device are used to compensate for temperature and batch to batch processing effects of FET devices.
    • 示出了使用多个延迟级的压控振荡器电路,其中最后阶段环回到第一级。 通过对一个或多个电容器充电来形成每一级延迟。 该电路使用有源元件,显示出控制电压和所得电流之间的平方律关系。 电流最终用于对延迟电容器充电。 净效应是VCO频率和输入控制电压的线性关系。 通过使用平方律电流源来提供线性关系的范围,以提供适当的电流,当其他有源器件不再支持平方律关系时,延伸线性范围。 此外,双极性器件用于补偿FET器件的温度和批次处理效果。
    • 3. 发明授权
    • Circuitry to reduce PLL lock acquisition time
    • 电路减少PLL锁定采集时间
    • US06940356B2
    • 2005-09-06
    • US10780493
    • 2004-02-17
    • James J. McDonald, IIRonald B. Hulfachor
    • James J. McDonald, IIRonald B. Hulfachor
    • H03L7/089H03L7/095H03L7/107H03L7/18H03L7/00
    • H03L7/107H03L7/0898H03L7/095H03L7/18Y10S331/02
    • A phase locked loop, PLL, is described with multiple parallel charge pumps that are selectively disabled as phase lock is approached. A lock detection circuit is described that enabled reference currents to be fed to the parallel charge pumps. The error signal from a phase detector is arranged as UP and a DOWN signals that are averaged in the lock detector. When the average error is large, all the reference currents feed the charge pumps that provide a high loop gain to reduce the lock time. As the lock becomes closer selective reference currents are disabled to reduce loop gain so that a smooth transition to lock is made. Selectively switching currents into a low pass filter that usually follows a charge pump in a PLL circuit automatically reduces switching noise by the operation of the low pass filter.
    • 使用多个并联电荷泵描述了锁相环PLL,当并联锁相时,该电荷泵被选择性地禁用。 描述了使得能够将参考电流馈送到并联电荷泵的锁定检测电路。 来自相位检测器的误差信号被布置为在锁定检测器中被平均的UP和DOWN信号。 当平均误差较大时,所有参考电流都会提供提供高回路增益的电荷泵,以减少锁定时间。 随着锁变得更近,选择性参考电流被禁用以减小环路增益,从而进行平滑过渡到锁定。 选择性地将电流切换到通常在PLL电路中的电荷泵之后的低通滤波器中,通过低通滤波器的操作自动降低开关噪声。
    • 7. 发明授权
    • Triggering of an ESD NMOS through the use of an N-type buried layer
    • 通过使用N型掩埋层来触发ESD NMOS
    • US06855964B2
    • 2005-02-15
    • US10280313
    • 2002-10-25
    • Ronald B. Hulfachor
    • Ronald B. Hulfachor
    • H01L27/04H01L21/822H01L21/8234H01L23/62H01L27/02H01L27/06H01L29/76H01L29/78H01L29/94H01L31/062H01L31/113H01L31/119
    • H01L27/0277
    • An ESD NMOS structure with an odd number of N-type structures built into a P-type well. Buried N-type structures are positioned between the N-type structures. The center N-type structure and each alternate N-type structure are electrically connected to each other, to the buried N-type structures, and to the output contact; while the other N-type structures are electrically connected to each other and the P-well and to ground. When a positive ESD event occurs, a depletion zone is created in the P-well between the N-type buried structures and the N-type structures thereby increasing the resistivity of the structure. Moreover, when a positive ESD event occurs, the lateral NPN transistors on either side of the center N-type structure break down and snap back. The resulting current travels through the area of increased resistivity and thereby creates a larger voltage along the P-well from the center N-type structure out toward the distal N-type structures. The combination of the increased resistivity and the higher voltage act in combination to lower the triggering voltage of the ESD structure.
    • 具有内置于P型阱中的奇数N型结构的ESD NMOS结构。 埋置的N型结构位于N型结构之间。 中心N型结构和每个交替的N型结构彼此电连接到埋入的N型结构和输出触点; 而其他N型结构彼此电连接,并且P阱和接地。 当发生正的ESD事件时,在N型掩埋结构和N型结构之间的P阱中产生耗尽区,从而增加了结构的电阻率。 此外,当发生正的ESD事件时,中心N型结构两侧的侧面NPN晶体管分解并回跳。 所产生的电流穿过电阻率增加的区域,从而沿着P-阱从中心N型结构向远端N型结构产生更大的电压。 增加的电阻率和较高电压的组合组合起来以降低ESD结构的触发电压。
    • 10. 发明授权
    • Master/slave power supply switch driver circuitry
    • 主/从电源开关驱动电路
    • US08558524B2
    • 2013-10-15
    • US13069208
    • 2011-03-22
    • Robert T. CarrollRonald B. Hulfachor
    • Robert T. CarrollRonald B. Hulfachor
    • G05F1/59
    • H02M3/1584H02M2003/1586
    • A power supply circuit can be configured to include a first circuit and a second circuit. Each circuit can be substantially identical to each other but provide different functionality depending on how they are configured. For example, each of the first circuit and second circuit can be chips having substantially the same pin layout and internal circuitry. However, the functionality provided by the circuits varies depending on whether a respective circuit is configured as a master or slave. The first circuit is configured as the master and generates multiple phase control signals. The first circuit uses a portion of the multiple phase control signals to control a first set of phases. The first circuit transmits a second portion of the multiple phase control signals to the second circuit configured as a slave. The second circuit is configured to receive and use the second portion of control signals to control a second set of phases.
    • 电源电路可以被配置为包括第一电路和第二电路。 每个电路可以基本上彼此相同,但是根据它们的配置方式提供不同的功能。 例如,第一电路和第二电路中的每一个可以是具有基本上相同的引脚布局和内部电路的芯片。 然而,电路提供的功能取决于各个电路是配置为主机还是从机。 第一个电路被配置为主机并产生多个相位控制信号。 第一电路使用多相控制信号的一部分来控制第一组相位。 第一电路将多相控制信号的第二部分发送到被配置为从设备的第二电路。 第二电路被配置为接收和使用控制信号的第二部分来控制第二组相位。