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1. 发明申请

US20090014063A1 METHOD FOR PRODUCTION OF A SINGLE-SIDED CONTACT SOLAR CELL AND SINGLE-SIDED CONTACT SOLAR CELL 审中-公开
标题翻译：单面接触太阳能电池和单面接触太阳能电池的制造方法
公开(公告)号：US20090014063A1
公开(公告)日：2009-01-15
申请号：US11915984
申请日：2006-05-22
申请人： Rolf Stangl , Marinus Kunst , Klaus Lips , Manfred Schmidt , Jens Schneider , Frank Wuensch
发明人： Rolf Stangl , Marinus Kunst , Klaus Lips , Manfred Schmidt , Jens Schneider , Frank Wuensch
IPC分类号： H01L31/06 , H01L31/18 , H01L31/042
CPC分类号： H01L31/022425 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： A single-side contacted solar cell and method for production of a single-side contacted solar cell provide a direct arrangement of a contact grid on one side of an absorber layer. A free surface of the contact grid is coated with an electrically non-conducting insulation layer. An emitter layer is deposited on a whole surface such that the contact grid is arranged between the absorber layer and the emitter layer. The emitter layer is provided with a contact layer. For back face contact, the emitter layer is arranged on a back face of the absorber layer to avoid additional absorptive losses.
摘要翻译：单面接触式太阳能电池及单面接触式太阳能电池的制造方法是在吸收体层的一面上直接配置接触栅极。接触网格的自由表面涂有非导电绝缘层。发射极层沉积在整个表面上，使得接触栅格布置在吸收层和发射极层之间。发射极层设置有接触层。对于背面接触，发射极层布置在吸收层的背面，以避免额外的吸收损失。

2. 发明申请

US20080156370A1 Heterocontact Solar Cell with Inverted Geometry of its Layer Structure 审中-公开
标题翻译：具有反向几何结构的异质太阳能电池
公开(公告)号：US20080156370A1
公开(公告)日：2008-07-03
申请号：US11912240
申请日：2006-04-11
申请人： Ossamah Abdallah , Guiseppe Citarella , Marinus Kunst , Frank Wuensch
发明人： Ossamah Abdallah , Guiseppe Citarella , Marinus Kunst , Frank Wuensch
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/0747 , H01L31/075 , Y02E10/548
摘要： A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included. The layer structure has an inverted geometry such that the emitter is on a side of the absorber facing away from the light and the cover layer is configured as a transparent antireflective layer and as a passivation layer of the absorber, the passivation layer forms a surface field that reflects minority charge carriers, the first ohmic contact structure penetrating the transparent antireflective layer and the second ohmic contact structure configured over a surface area of the emitter.
摘要翻译：层状结构中的异质接触太阳能电池。太阳能电池包括由p型和/或n型掺杂的晶体半导体材料制成的吸收体。电池还包括由非晶半导体材料制成的发射体，其相对于吸收体相对掺杂。还包括由吸收体和发射体之间的非晶半导体材料制成的本征中间层。电池包括在吸收器面对光的一侧的覆盖层。还包括第一欧姆接触结构，其包括在面向光的吸收体的侧面上的最小化的阴影表面和在吸收体背离光的一侧上的第二欧姆接触结构。层结构具有反转几何形状，使得发射体位于吸收体背离光的一侧，并且覆盖层被构造为透明抗反射层，并且作为吸收体的钝化层，钝化层形成表面场其反射少数电荷载体，穿过透明抗反射层的第一欧姆接触结构和配置在发射体的表面区域上的第二欧姆接触结构。

3. 发明授权

US4704576A Microwave measuring and apparatus for contactless non-destructive testing of photosensitive materials 失效
标题翻译：微波测量和感光材料非接触非破坏性测试仪器
公开(公告)号：US4704576A
公开(公告)日：1987-11-03
申请号：US706712
申请日：1985-02-28
申请人： Helmut Tributsch , Gerhard Beck , Marinus Kunst
发明人： Helmut Tributsch , Gerhard Beck , Marinus Kunst
IPC分类号： G01R31/26 , G01N22/00 , G01R31/302 , G01R27/06
CPC分类号： G01N22/00
摘要： Variations in parameters of a waveguide system caused by an excitation of charge carriers of a specimen to be measured and positioned in a microwave field, give definite information on the material properties of the specimen without having to destroy, or even contact the specimen. Irradiation with a sharply focused photon or electron beam of a surface spot having a diameter of about 0.1 to 10.0 micrometers, and displacing of this light spot across the surface of the specimen, with the displacement increments of the specimen within the cross sectional area of a waveguide being of the order of magnitude of micrometers, surface structures such as ground boundaries, steps in stratified-lattice crystals, formation defects, destroyed surface areas, etc., can be detected in photosensitive semiconductor layers with a high resolution.
摘要翻译：由待测样品的电荷载流子的激发引起的波导系统的参数变化在微波场中给出了样品的材料性质的确定信息，而不必破坏或甚至接触样品。用具有约0.1至10.0微米直径的表面光斑的尖锐聚焦的光子或电子束照射，并将该光点移动穿过试样的表面，其中试样的位移增量在横截面积内波导的微量级数量级，可以在高分辨率的光敏半导体层中检测表面结构，例如地面边界，分层格子晶体中的步骤，形成缺陷，破坏的表面积等。

4. 发明授权

US4700311A System for optimizing process parameters in photoactive semiconductor manufacturing in-situ 失效
标题翻译：光源半导体制造原位工艺参数优化系统
公开(公告)号：US4700311A
公开(公告)日：1987-10-13
申请号：US694932
申请日：1985-01-25
申请人： Helmut Tributsch , Gerhard Beck , Marinus Kunst , Udo Kuppers , Hans-Joachim Lewerenz , Jochen Lilie , Andre Werner
发明人： Helmut Tributsch , Gerhard Beck , Marinus Kunst , Udo Kuppers , Hans-Joachim Lewerenz , Jochen Lilie , Andre Werner
IPC分类号： H01L21/66 , H01L21/205 , H01L31/04 , H01L31/20 , C30B25/16 , H01L31/18
CPC分类号： H01L31/202 , Y02E10/50 , Y02P70/521 , Y10S136/29
摘要： Materials and systems substantially having photoactive properties are produced with a high quality output and without time losses in the fabrication process. To determine the quality of the photoactive material in situ, conductivity is induced in the material by exciting charge carriers through irradiation, and an electromagnetic field influenced thereby is measured, with the result of the measurement being evaluated by a computer with a corresponding control of actuating members such as valves and controllers. Optimum process parameters are thus found and used for the process.
摘要翻译：基本上具有光敏性质的材料和系统在制造过程中以高质量的输出产生并且没有时间损失。为了在原位确定光活性材料的质量，通过照射激发载流子，在材料中诱发电导率，并且测量受影响的电磁场，其结果是通过计算机进行评估，计算机具有相应的致动控制会员如阀门和控制器。因此找到最佳工艺参数并用于该过程。

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