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    • 4. 发明申请
    • METHOD AND DEVICE FOR PLASMA TREATMENT OF A FLAT SUBSTRATE
    • 用于等离子体处理平板基板的方法和装置
    • US20120097641A1
    • 2012-04-26
    • US13127497
    • 2009-11-04
    • Rudolf BeckmannMichael GeislerArndt ZeunerMarks FiedlerGunter GraboschAndreas PflugUwe CzarnetzkiRalf-Peter BrinkmannMichael Siemers
    • Rudolf BeckmannMichael GeislerArndt ZeunerMarks FiedlerGunter GraboschAndreas PflugUwe CzarnetzkiRalf-Peter BrinkmannMichael Siemers
    • B44C1/22C23C16/50
    • H01J37/32165H01J37/32091
    • Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114) between the surface area to be treated and the electrode has a linear extension dp, where dp
    • 用于等离子体装置中的基板的等离子体处理的方法和装置,其中 - 所述基板(110)布置在电极(112)和相对电极(108)之间,所述电极与对电极(108)之间的距离为d, 并且电极 - 电容耦合等离子体放电被激发,在电极(112)和对电极(108)之间形成DC自偏压,在等离子体放电的面积为 存在电极,其具有准中等离子体体积(114),一定量的待处理衬底的表面积经受的至少一种可活化气体种类,其条件是等离子体放电被激发, - 其中距离d具有与s = se + sg相当的值,其中se表示电极前面的等离子体边界层(119)的厚度,sg表示前面的等离子体边界层(118)的厚度 的待处理基材表面或其中 在待处理表面积和电极之间的准中性等离子体体积(114)中具有线性延伸dp,其中dp <1dd,dp
    • 7. 发明授权
    • Sputtering cathode based on the magnetron principle
    • 基于磁控管原理的溅射阴极
    • US4933064A
    • 1990-06-12
    • US126776
    • 1987-11-30
    • Michael GeislerJorg KieserReiner Kukla
    • Michael GeislerJorg KieserReiner Kukla
    • C23C14/36C23C14/34C23C14/35H01J37/34
    • H01J37/3423H01J37/3408H01J37/3426H01J37/3452
    • A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.
    • 用于涂覆基材的溅射阴极。 阴极具有基极,非磁性材料的靶,以及具有暴露极面的磁体系统,用于产生覆盖溅射表面的磁力线的隧道。 目标设置有至少两个连续的突起,一个在另一个内部,其在它们之间包含至少一个溅射表面,并且具有面对的壁表面。 极面位于突起的两侧并且在它们之间的溅射表面,使得磁力线从一个壁表面垂直地发生,并且在穿过溅射表面之后,垂直地重新进入相​​对的壁表面。 磁体系统具有平行于凸起磁化的永久磁体,它们通过软磁性底座在背对凸起的侧面上一起被钩住,并且在面向突出部的侧面上设置有至少延伸的软磁极靴 投影高度的一部分。