专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07763535B2 Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell 失效
标题翻译：用于制造半导体部件，特别是太阳能电池的金属背面接触的方法
公开(公告)号：US07763535B2
公开(公告)日：2010-07-27
申请号：US12202123
申请日：2008-08-29
申请人： Roland Trassl , Jian Liu , Stephan Wieder , Jürgen Henrich , Gerhard Rist
发明人： Roland Trassl , Jian Liu , Stephan Wieder , Jürgen Henrich , Gerhard Rist
IPC分类号： H01L23/488
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.
摘要翻译：本发明涉及一种用于制造半导体部件，特别是太阳能电池的背面接触的方法，所述太阳能电池在真空处理室中在基板的背面上包括金属层，并且使用真空处理系统执行所述方法。通过这种方法及其使用，特别是硅基太阳能电池可以以连续的工艺顺序以简单的方式提供背面接触，其中可以提供特别有效和经济的工艺顺序，因为没有用于旋转基材是必需的，特别是可以省去丝印步骤。

2. 发明申请

US20090061627A1 METHOD FOR PRODUCING A METAL BACKSIDE CONTACT OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR, A SOLAR CELL 失效
标题翻译：用于制造特别是太阳能电池的半导体元件的金属背面接触的方法
公开(公告)号：US20090061627A1
公开(公告)日：2009-03-05
申请号：US12202123
申请日：2008-08-29
申请人： Roland Trassl , Jian Liu , Stephan Wieder , Juergen Henrich , Gerhard Rist
发明人： Roland Trassl , Jian Liu , Stephan Wieder , Juergen Henrich , Gerhard Rist
IPC分类号： H01L21/768 , H01L21/677
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.
摘要翻译：本发明涉及一种用于制造半导体部件，特别是太阳能电池的背面接触的方法，所述太阳能电池在真空处理室中在基板的背面上包括金属层，并且使用真空处理系统执行所述方法。通过这种方法及其使用，特别是硅基太阳能电池可以以连续的工艺顺序以简单的方式提供背面接触，其中可以提供特别有效和经济的工艺顺序，因为没有用于旋转基材是必需的，特别是可以省去丝印步骤。

3. 发明申请

US20100236920A1 DEPOSITION APPARATUS WITH HIGH TEMPERATURE ROTATABLE TARGET AND METHOD OF OPERATING THEREOF 审中-公开
标题翻译：具有高温可旋转目标的沉积装置及其操作方法
公开(公告)号：US20100236920A1
公开(公告)日：2010-09-23
申请号：US12408409
申请日：2009-03-20
申请人： Joachim Mueller , Roland Trassl , Jian Liu
发明人： Joachim Mueller , Roland Trassl , Jian Liu
IPC分类号： C23C14/54
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/541 , H01J37/342 , H01J37/3426 , H01J37/3435 , H01J2237/2001
摘要： A deposition apparatus and a method for sputtering material on a substrate is provided with a substrate holder for holding the substrate, a rotatable target adapted for being sputtered, and a heating system including a back side heating for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100° C. A method for performing this method is disclosed.
摘要翻译：在基板上溅射材料的沉积装置和方法设置有用于保持基板的基板保持器，适于溅射的可旋转靶，以及包括从背面加热基板的背面加热的加热系统侧面加热用于从前面加热基底。可旋转靶用作前侧加热，适用于将基板加热至至少100℃的温度。公开了一种执行该方法的方法。

4. 发明申请

US20090320755A1 ARRANGEMENT FOR COATING A CRYSTALLINE SILICON SOLAR CELL WITH AN ANTIREFLECTION/PASSIVATION LAYER 审中-公开
标题翻译：用于涂覆具有抗反射/钝化层的结晶硅太阳能电池的布置
公开(公告)号：US20090320755A1
公开(公告)日：2009-12-31
申请号：US12146170
申请日：2008-06-25
申请人： Jian Liu , Sven Schramm , Roland Trassl
发明人： Jian Liu , Sven Schramm , Roland Trassl
IPC分类号： C23C16/44
CPC分类号： C23C14/022 , C23C14/568 , H01L21/67069 , H01L31/02168 , Y02E10/50
摘要： In the plasma pretreatment a substrate, preferably a silicon solar cell, is transported into a pretreatment chamber (1). In this pretreatment chamber (1) is contained a gas mixture comprising at least NH3 or hydrogen. By means of a cathode (4) a plasma is generated in the pretreatment chamber (1) by means of a glow discharge. The atomic hydrogen in the plasma reacts hereby with the oxygen, which is located on the solar cell (25) in the form of an oxide layer. By modifying or removing the oxide layer, better passivation of the solar cell can be attained and, consequently, higher efficiency.
摘要翻译：在等离子体预处理中，将衬底，优选硅太阳能电池输送到预处理室（1）中。在该预处理室（1）中含有至少包含NH 3或氢气的气体混合物。通过阴极（4），通过辉光放电在预处理室（1）中产生等离子体。等离子体中的原子氢与氧化物反应，氧气以氧化物层的形式位于太阳能电池（25）上。通过改变或去除氧化物层，可以获得太阳能电池的更好的钝化，并因此获得更高的效率。

5. 发明申请

US20090199901A1 PHOTOVOLTAIC DEVICE COMPRISING A SPUTTER DEPOSITED PASSIVATION LAYER AS WELL AS A METHOD AND APPARATUS FOR PRODUCING SUCH A DEVICE 审中-公开
标题翻译：作为用于生产这样的装置的方法和装置的包含溅射器沉积钝化层的光伏装置
公开(公告)号：US20090199901A1
公开(公告)日：2009-08-13
申请号：US12028457
申请日：2008-02-08
申请人： Roland Trassl , Sven Schramm , Winfried Wolke , Jan Catoir
发明人： Roland Trassl , Sven Schramm , Winfried Wolke , Jan Catoir
IPC分类号： H01L31/00 , H01L21/3105
CPC分类号： H01L31/02168 , H01L31/18 , Y02E10/50
摘要： The present invention refers to a method of producing a photovoltaic device having at least one semiconductor unit comprising the following steps: a cleaning of at least one surface of the semiconductor unit by etching; drying of the at least one surface of the semiconductor unit in a substantially oxygen-free or oxygen-depleted environment; and depositing of a passivation layer on the at least one surface as well as to a device for carrying out such a method and to photovoltaic devices produced by this method.
摘要翻译：本发明涉及一种制造具有至少一个半导体单元的光伏器件的方法，包括以下步骤：通过蚀刻来清洁半导体单元的至少一个表面; 在基本上无氧或耗氧的环境中干燥半导体单元的至少一个表面; 以及在所述至少一个表面上沉积钝化层以及用于执行这种方法的设备以及通过该方法制造的光伏器件。

6. 发明授权

US11058010B2 Evaporation apparatus for depositing material on a flexible substrate and method therefore 有权
公开(公告)号：US11058010B2
公开(公告)日：2021-07-06
申请号：US16318812
申请日：2016-08-01
申请人： Applied Materials, Inc. , Roland Trassl
发明人： Roland Trassl
IPC分类号： C23C14/00 , H05K3/14 , C23C14/02 , C23C14/56 , H05K1/11
摘要： An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

7. 发明授权

US08157975B2 Sprayed Si- or Si:Al-target with low iron content 失效
标题翻译：喷涂低铁含量的Si-或Si：Al-靶
公开(公告)号：US08157975B2
公开(公告)日：2012-04-17
申请号：US12388342
申请日：2009-02-18
申请人： Roland Trassl , Wolf-Eckart Fritsche
发明人： Roland Trassl , Wolf-Eckart Fritsche
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C23C4/04 , C23C4/067 , Y02E10/548
摘要： A sputter target for sputtering a silicon-containing film is provided. The target includes a silicon-containing sputter material layer, and a carrier for carrying the sputter material layer, wherein the sputter material layer contains less than 200 ppm iron.
摘要翻译：提供溅射含硅膜的溅射靶。靶包括含硅溅射材料层和用于承载溅射材料层的载体，其中溅射材料层含有少于200ppm的铁。

8. 发明申请

US20070227882A1 SPUTTER CHAMBER FOR COATING A SUBSTRATE 审中-公开
标题翻译：用于涂覆基材的喷射室
公开(公告)号：US20070227882A1
公开(公告)日：2007-10-04
申请号：US11692868
申请日：2007-03-28
申请人： Roland Trassl , Michael Geisler , Albert Kastner
发明人： Roland Trassl , Michael Geisler , Albert Kastner
IPC分类号： C23C14/00
CPC分类号： H01J37/3244 , H01J37/34 , H01J37/347 , H01J2237/3325
摘要： The invention relates to a sputter chamber for coating substrates, in which the so-called “picture frame effect” is eliminated or at least largely reduced. The thickness of the coating at the margin of a substrate hereby no longer deviates significantly from the thickness of the coating in the center of the substrate. This is attained thereby that the negative effect of the process gas—or of several process gases—which is introduced into the sputter chamber is equalized by an additional inert or reactive gas. At the margins of the substrates to be coated and on the substrate side facing away from the cathode thus an additional gas stream is generated, which is directed counter to the process gas stream.
摘要翻译：本发明涉及一种用于涂覆基板的溅射室，其中所谓的“图像帧效应”被消除或至少大大降低。衬底边缘处的涂层厚度不再显着偏离衬底中心涂层的厚度。由此可以实现由引入到溅射室中的工艺气体或几种工艺气体的负面影响，由额外的惰性气体或反应性气体均衡。在待涂覆的基底的边缘和背离阴极的基底侧上，产生另外的气流，其与工艺气体流相反。

9. 发明申请

US20120028449A1 METHOD AND INSTALLATION FOR PRODUCING AN ANTI- REFLECTION AND/OR PASSIVATION COATING FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于生产半导体器件的反射和/或钝化涂层的方法和安装
公开(公告)号：US20120028449A1
公开(公告)日：2012-02-02
申请号：US13237767
申请日：2011-10-17
申请人： Nicolas Auriac , Roland Trassl
发明人： Nicolas Auriac , Roland Trassl
IPC分类号： H01L21/20
CPC分类号： H01L21/6715 , H01L21/67005 , H01L21/6776 , H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A method of producing an anti-reflection and/or passivation coating for semiconductor devices is provided. The method includes: providing a semiconductor device precursor 30 having a surface to be provided with the anti-reflection and/or passivation coating; treating the surface with ions; and depositing a hydrogen containing anti-reflection and/or passivation coating onto the treated surface.
摘要翻译：提供一种制造用于半导体器件的抗反射和/或钝化涂层的方法。该方法包括：提供具有要被设置有抗反射和/或钝化涂层的表面的半导体器件前体30; 用离子处理表面; 以及在所处理的表面上沉积含氢的抗反射和/或钝化涂层。

10. 发明申请

US20080302653A1 Method And Device For Producing An Anti-Reflection Or Passivation Layer For Solar Cells 审中-公开
标题翻译：用于生产太阳能电池的反射或钝化层的方法和装置
公开(公告)号：US20080302653A1
公开(公告)日：2008-12-11
申请号：US12045992
申请日：2008-03-11
申请人： Roland Trassl , Sven Schramm , Thomas Hegemann
发明人： Roland Trassl , Sven Schramm , Thomas Hegemann
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： C23C14/541 , C23C14/0652 , C23C14/56 , H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The present invention relates to a method for producing an anti-reflection and/or passivation coating for solar cells. The method may include the steps of providing a silicon wafer in a deposition chamber, pre-heating said silicon wafer to a temperature above 400° C. and deposition of a hydrogen containing anti-reflection and/or passivation coating by a sputter process. A coating apparatus is also provided for producing solar cells, especially anti-reflection and/or passivation coatings on Si wafers, comprising a first vacuum chamber, a second vacuum chamber and conveying means for transporting a substrate through said first and second vacuum chambers. The first vacuum chamber comprising at least one infrared radiation heater with a heater filament that has a temperature between 1800° C. and 3000° C. The second vacuum chamber comprising sputter means for vaporization of a target as well as a gas inlet for introducing a reactive gas including hydrogen.
摘要翻译：本发明涉及一种用于生产用于太阳能电池的抗反射和/或钝化涂层的方法。该方法可以包括以下步骤：在沉积室中提供硅晶片，将所述硅晶片预热至高于400℃的温度，并通过溅射工艺沉积含氢的抗反射和/或钝化涂层。还提供一种涂覆设备，用于生产太阳能电池，特别是在Si晶片上的防反射和/或钝化涂层，其包括第一真空室，第二真空室和用于通过所述第一和第二真空室输送衬底的输送装置。第一真空室包括至少一个红外辐射加热器，该加热器灯丝具有1800℃至3000℃之间的温度。第二真空室包括用于蒸发靶的溅射装置以及用于引入包括氢的活性气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式