专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4654609A Monolithic planar doped barrier limiter 失效
标题翻译：单片平面掺杂势垒限制器
公开(公告)号：US4654609A
公开(公告)日：1987-03-31
申请号：US705267
申请日：1985-02-25
申请人： Samuel Dixon, Jr. , Thomas R. AuCoin , Roger J. Malik
发明人： Samuel Dixon, Jr. , Thomas R. AuCoin , Roger J. Malik
IPC分类号： H01L29/36 , H01L29/861 , H03G11/02 , H01P1/22
CPC分类号： H03G11/025 , H01L29/365 , H01L29/8618
摘要： A passive millimeter wave image guide power limiter comprising a length ofielectric transmission line or waveguide for millimeter wave frequencies located on a relatively thin conductive ground plane forming thereby an image guide and including a planar doped barrier diode structure formed in the dielectric transmission line with the planar doped barrier structure being integrally grown in a slot milled in the constituent material, i.e. gallium arsenide, of the waveguide transversely across the width dimension thereof so as to be oriented perpendicular to the flow of RF power being propagated along its length dimension. The planar doped barrier structure becomes conductive at a predetermined power level to reflect any further incident RF power back toward the power source.
摘要翻译：一种无源毫米波图像引导功率限制器，其包括位于相对薄的导电接地平面上的毫米波频率的介电传输线或波导的长度，从而形成图像引导件，并且包括形成在电介质传输线中的平面掺杂阻挡二极管结构，平面掺杂阻挡结构整体生长在波导管的构成材料（即砷化镓）中铣削的槽中，横向穿过其宽度尺寸，以便垂直于沿着其长度尺寸传播的RF功率的流动。平面掺杂阻挡结构以预定的功率电平变为导通，以将进一步的入射RF功率反射回电源。

2. 发明授权

US4442445A Planar doped barrier gate field effect transistor 失效
标题翻译：平面掺杂栅极场效应晶体管
公开(公告)号：US4442445A
公开(公告)日：1984-04-10
申请号：US323858
申请日：1981-11-23
申请人： Roger J. Malik , Thomas R. AuCoin
发明人： Roger J. Malik , Thomas R. AuCoin
IPC分类号： H01L29/10 , H01L29/80 , H01L27/12 , H01L29/12
CPC分类号： H01L29/80 , H01L29/10
摘要： Disclosed is an epitaxial layer field effect transistor having a planar dd barrier gate formed on an n-type semiconductor planar channel region between drain and source terminals formed on the surface of the channel region. The semiconductor channel region is fabricated on a semiconductor substrate, preferably GaAs and being separated therefrom by one or more semiconductor planar buffer regions. The planar doped barrier gate comprises an n.sup.+ -.pi.-p.sup.+ -.pi. structure grown by molecular beam epitaxy over the n-type channel region. Application of an electrical potential to the gate modulates the channel charge depletion in the semiconductor channel region underlying the gate causing a variation in the channel conductance laterally between the source and drain terminals.
摘要翻译：公开了一种外延层场效应晶体管，其具有形成在沟道区域表面上形成的漏极和源极端子之间的n型半导体平面沟道区上的平面掺杂势垒栅。半导体沟道区域制造在半导体衬底上，优选地是GaAs，并由一个或多个半导体平面缓冲区与其分离。平面掺杂阻挡栅极包括通过n型沟道区域上的分子束外延生长的n + -pi-p +-π结构。向栅极施加电势调制栅极下方的半导体沟道区域中的沟道电荷耗尽，导致源极和漏极端子之间的沟道电导的横向变化。

3. 发明授权

US4247358A Method of growing single crystals of alpha aluminum phosphate 失效
标题翻译：生长α磷酸铝单晶的方法
公开(公告)号：US4247358A
公开(公告)日：1981-01-27
申请号：US46961
申请日：1979-06-08
申请人： Thomas R. AuCoin , Abraham Schwartz , Melvin J. Wade , Roger J. Malik
发明人： Thomas R. AuCoin , Abraham Schwartz , Melvin J. Wade , Roger J. Malik
IPC分类号： C30B7/00 , C30B7/10
CPC分类号： C30B7/00 , C30B29/14
摘要： Single crystals of alpha aluminum phosphate of high crystal perfection arerown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics.The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C. over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C. per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.
摘要翻译：从正磷酸铝和正磷酸的接种溶液中生长出高结晶完整性的α磷酸铝单晶，以提供对晶体生长过程的直接目视观察，并允许精确测定成核和生长动力学。该方法包括将接种的溶液密封在透明的石英安瓿中，将安瓿插入精确温度控制的硅油浴中，在3小时内将硅油浴的温度从环境温度升高至约150℃，以0.1至2.0摄氏度的速率向上加热至60天，并从硅油浴中除去石英安瓿并快速冷却并除去晶体。

4. 发明授权

US4864645A Harmonically pumped monolithic planar doped barrier mixer 失效
标题翻译：谐波泵浦单片平面掺杂阻挡混合器
公开(公告)号：US4864645A
公开(公告)日：1989-09-05
申请号：US199819
申请日：1988-05-26
申请人： Samuel Dixon, Jr. , Thomas R. AuCoin , Raymond L. Ross
发明人： Samuel Dixon, Jr. , Thomas R. AuCoin , Raymond L. Ross
IPC分类号： H03B19/18 , H03D9/06
CPC分类号： H03D9/0633 , H03B19/18
摘要： A microwave mixer suitable for millimeter wave radar applications. A semi-insulating gallium arsenide dielectric waveguide structure contains an embedded planar doped barrier (PDB) structure as a non-linear mixing element. The local oscillator (LO) signal is guided to the PDB structure via a coplanar type waveguide. The radio frequency (RF) signal is guided to the PDB structure via an image guide and a microstrip circuit serves to transmit the intermediate frequency (IF).
摘要翻译：适用于毫米波雷达应用的微波搅拌器。半绝缘砷化镓电介质波导结构包含作为非线性混合元件的嵌入式平面掺杂阻挡层（PDB）结构。本地振荡器（LO）信号通过共面型波导引导到PDB结构。射频（RF）信号经由图像引导器被引导到PDB结构，微带电路用于传输中频（IF）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式