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    • 9. 发明申请
    • Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations
    • 在干燥操作期间减少底物图案折叠的装置和方法
    • US20120260517A1
    • 2012-10-18
    • US13089186
    • 2011-04-18
    • Eric LenzMike RavkinKatrina Mikhaylichenko
    • Eric LenzMike RavkinKatrina Mikhaylichenko
    • F26B3/00
    • F26B3/04F26B21/145H01L21/02057H01L21/67034
    • Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region. A plurality of vacuum ports is defined at the interface of the second region and the third region. The third region includes a plurality of angled inlet ports that are directed toward the second region. A method for performing a drying operation includes applying heated isopropyl alcohol as vapor to a wafer surface in the first region and heating the underside region of the wafer corresponding to the first region. Heated Nitrogen is injected to the surface of the wafer in the third region. The deionized water and isopropyl alcohol are removed from the surface of the wafer through the vacuum ports along with the Nitrogen so as to leave the wafer surface substantially dry.
    • 用于干燥基材表面的装置和方法包括:接近干燥头,其具有头部本体,头部主体包括被配置为当存在时与基底的表面相对设置的处理表面。 处理表面包括第一区域,第二区域和第三区域。 第一区域被限定在头部主体的前缘,并且包括凹入到头部本体中的空腔区域。 空腔区域包括多个入口端口,用于将蒸汽流体引入空腔区域。 当存在时,第二区域靠近衬底的表面设置并且位于第一区域旁边。 当存在时,第三区域靠近基板的表面设置并且位于第二区域旁边。 在第二区域和第三区域的界面处限定多个真空口。 第三区域包括指向第二区域的多个成角度的入口端口。 执行干燥操作的方法包括将加热的异丙醇作为蒸气施加到第一区域中的晶片表面并加热与第一区域相对应的晶片的下侧区域。 在第三区域中将加热的氮气注入晶片的表面。 去离子水和异丙醇通过真空端口与氮气一起从晶片表面除去,以使晶片表面基本上干燥。
    • 10. 发明授权
    • Apparatus and method for controlling plasma potential
    • 用于控制等离子体电位的装置和方法
    • US09111724B2
    • 2015-08-18
    • US12905041
    • 2010-10-14
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • H01J7/24C23C16/00C23F1/00H01L21/306H01J37/32
    • H01J37/32183H01J37/32091H01J37/32174H01J37/32532
    • A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
    • 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离,并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。