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1. 发明授权

US06291867B1 Zirconium and/or hafnium silicon-oxynitride gate dielectric 有权
标题翻译：锆和/或铪硅 - 氧氮化物栅极电介质
公开(公告)号：US06291867B1
公开(公告)日：2001-09-18
申请号：US09434205
申请日：1999-11-04
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
摘要翻译：本文公开了包括高介电常数锆（或铪）硅 - 氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成锆硅氧烷栅极电介质层36，然后形成导电栅极38.具有介电常数的氧化硅 - 氧氮化硅栅极电介质层36显着高于二氧化硅的介电常数。然而，锆硅氧烷栅极电介质也可以被设计为具有二氧化硅的优点，例如，高击穿，低界面状态密度和高稳定性。

2. 发明授权

US06291866B1 Zirconium and/or hafnium oxynitride gate dielectric 有权
标题翻译：锆和/或铪氧氮化物栅极电介质
公开(公告)号：US06291866B1
公开(公告)日：2001-09-18
申请号：US09421837
申请日：1999-10-20
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
摘要翻译：本文公开了包括高介电常数锆（或铪）氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成氧氮化锆栅极电介质层36，然后形成导电栅极38.氧氮化硅栅极电介质层36的介电常数明显高于二氧化硅的介电常数。

3. 发明授权

US6013553A Zirconium and/or hafnium oxynitride gate dielectric 失效
标题翻译：锆和/或铪氧氮化物栅极电介质
公开(公告)号：US6013553A
公开(公告)日：2000-01-11
申请号：US115773
申请日：1998-07-15
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/283 , H01L21/31 , H01L21/441 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L29/513 , H01L29/517 , H01L29/518 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
摘要翻译：本文公开了包括高介电常数锆（或铪）氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成氧氮化锆栅极电介质层36，然后形成导电栅极38.氧氮化硅栅极电介质层36的介电常数明显高于二氧化硅的介电常数。

4. 发明授权

US6020243A Zirconium and/or hafnium silicon-oxynitride gate dielectric 失效
标题翻译：锆和/或铪硅 - 氧氮化物栅极电介质
公开(公告)号：US6020243A
公开(公告)日：2000-02-01
申请号：US115859
申请日：1998-07-15
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/283 , H01L21/31 , H01L21/441 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L29/513 , H01L29/517 , H01L29/518 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
摘要翻译：本文公开了包括高介电常数锆（或铪）硅 - 氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成锆硅氧烷栅极电介质层36，然后形成导电栅极38.具有介电常数的氧化硅 - 氧氮化硅栅极电介质层36显着高于二氧化硅的介电常数。然而，锆硅氧烷栅极电介质也可以被设计为具有二氧化硅的优点，例如，高击穿，低界面状态密度和高稳定性。

5. 发明授权

US06897105B1 Method of forming metal oxide gate structures and capacitor electrodes 有权
标题翻译：形成金属氧化物栅极结构和电容器电极的方法
公开(公告)号：US06897105B1
公开(公告)日：2005-05-24
申请号：US09396642
申请日：1999-09-15
申请人： Glen D. Wilk , Robert M. Wallace , John M. Anthony , Paul McIntyre
发明人： Glen D. Wilk , Robert M. Wallace , John M. Anthony , Paul McIntyre
IPC分类号： H01L21/02 , H01L21/44 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/1085 , H01L27/11507 , H01L28/60 , Y10S438/957
摘要： An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.
摘要翻译：本发明的一个实施例是形成从第二结构绝对地设置的导电结构的方法，所述方法包括：提供所述第二结构; 形成材料的导电结构（图1的步骤118），其在氧化之后保持基本导电; 在第二结构和导电结构之间形成电绝缘层（图1的步骤116）; 以及通过使其在含臭氧的气氛中持续一段时间并处于第一温度来氧化所述导电结构。

6. 发明授权

US06613698B2 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
公开(公告)号：US06613698B2
公开(公告)日：2003-09-02
申请号：US09859907
申请日：2001-05-17
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L21318
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

7. 发明授权

US06436801B1 Hafnium nitride gate dielectric 有权
公开(公告)号：US06436801B1
公开(公告)日：2002-08-20
申请号：US09506240
申请日：2000-02-17
申请人： Glen D. Wilk , Robert M. Wallace
发明人： Glen D. Wilk , Robert M. Wallace
IPC分类号： H01L213205
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/2855 , H01L21/318 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.

8. 发明授权

US06420729B1 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics 有权
公开(公告)号：US06420729B1
公开(公告)日：2002-07-16
申请号：US09747966
申请日：2000-12-27
申请人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
发明人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
IPC分类号： H01L2904
摘要： A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer of crystalline silicon nitride and forming an electrode layer on the dielectric layer of silicon nitride. The silicon (111) surface is cleaned and made atomically flat. The dielectric layer if formed of crystalline silicon nitride by placing the surface in an ammonia ambient at a pressure of from about 1×10−7 to about 1×10−5 Torr at a temperature of from about 850° C. to about 1000° C. The electrode layer is heavily doped silicon. According to a second embodiment, there is provided a silicon (111) surface on which is formed a first dielectric layer of crystalline silicon nitride having a thickness of about 2 monolayers. A second dielectric layer compatible with silicon nitride and having a higher dielectric constant than silicon nitride is formed on the first dielectric layer and an electrode layer is formed over the second dielectric layer. A third dielectric layer of silicon nitride having a thickness of about 2 monolayers can be formed between the second dielectric layer and the electrode layer. The second dielectric layer is preferably taken from the class consisting of tantalum pentoxide, titanium dioxide and a perovskite material. Both silicon nitride layers can be formed as in the first embodiment. The electrode layer is preferably heavily doped silicon

9. 发明授权

US06274510B1 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
标题翻译：用于形成高质量硅 - 氮电介质的较低温度方法
公开(公告)号：US06274510B1
公开(公告)日：2001-08-14
申请号：US09149427
申请日：1998-09-08
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L21318
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
摘要翻译：公开了一种在半导体衬底上形成热氮化硅的方法。该方法允许形成足够厚的用于FET栅极电介质但具有低热量预算的热氮化硅。

10. 发明授权

US6150242A Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode 有权
标题翻译：在薄的非晶硅氧化物层上生长晶体硅覆盖层并通过谐振隧道二极管的方法形成的方法
公开(公告)号：US6150242A
公开(公告)日：2000-11-21
申请号：US275706
申请日：1999-03-25
申请人： Jan Paul Van der Wagt , Glen D. Wilk , Robert M. Wallace
发明人： Jan Paul Van der Wagt , Glen D. Wilk , Robert M. Wallace
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： B82Y10/00 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02658
摘要： A method of forming a layer of crystalline silicon over silicon oxide and a resonant tunnel diode wherein there is provided a sufficiently clean (surface impurities
摘要翻译：在氧化硅和谐振隧道二极管上形成晶体硅层的方法，其中提供足够清洁（表面杂质<1013 / cm 2），原子光滑（均方根粗糙度<3埃）晶体硅表面。氧化硅间隔开的区域形成在足够薄的表面上，使得在表面上沉积的硅和氧化硅将能够使用该表面作为晶种，以形成延伸在氧化硅上的沉积硅的晶体硅。然后将硅沉积在包括氧化硅的表面上，以在硅氧化物上提供晶体硅。谐振隧道二极管通过在沉积的硅上形成氧化硅层形成，在氧化硅层上形成导电层，并从导电层去除导电层的一部分，氧化硅层和沉积的硅间隔开的氧化硅区域之间的间隙。氧化硅的间隔开的区域具有约10至约40埃，优选约15埃的厚度。形成间隔开的区域的步骤包括在表面上形成氧化硅层，用抗蚀剂图案化氧化硅并在图案化区域中蚀刻氧化硅，留下一些氧化硅。然后去除抗蚀剂，并且图案化区域中的氧化硅的其余部分被除去到表面，同时去除未图案化区域中的一部分氧化硅。

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