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1. 发明授权

US5260229A Method of forming isolated regions of oxide 失效
标题翻译：形成氧化物隔离区的方法
公开(公告)号：US5260229A
公开(公告)日：1993-11-09
申请号：US755508
申请日：1991-08-30
申请人： Robert L. Hodges , Frank R. Bryant , Fusen E. Chen , Che-Chia Wei
发明人： Robert L. Hodges , Frank R. Bryant , Fusen E. Chen , Che-Chia Wei
IPC分类号： H01L21/76 , H01L21/316 , H01L21/32 , H01L21/762
CPC分类号： H01L21/76202 , H01L21/32
摘要： A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.

2. 发明授权

US5420453A Intermediate structure for forming isolated regions of oxide 失效
标题翻译：用于形成氧化物隔离区的中间结构
公开(公告)号：US5420453A
公开(公告)日：1995-05-30
申请号：US304608
申请日：1994-09-12
申请人： Robert L. Hodges , Frank R. Bryant , Fusen E. Chen
发明人： Robert L. Hodges , Frank R. Bryant , Fusen E. Chen
IPC分类号： H01L21/76 , H01L21/316 , H01L21/32 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76202 , H01L21/32
摘要： A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.
摘要翻译：提供一种用于形成集成电路的隔离氧化物区域的方法和根据该集成电路形成的集成电路。在衬底的一部分上形成衬垫氧化物层。在衬垫氧化物层上形成第一氮化硅层。然后在第一氮化硅层上形成多晶硅缓冲层。在多晶硅层上形成第二氮化硅层。在第二氮化硅层上形成并图案化光致抗蚀剂层。通过第二氮化硅层和多晶硅缓冲层蚀刻开口以暴露第一氮化硅层的一部分。至少在开口中暴露的多晶硅缓冲层上形成第三氮化硅区域。在开口中蚀刻第一氮化硅层。然后在开口中形成场氧化物区域。

3. 发明授权

US5977607A Method of forming isolated regions of oxide 失效
标题翻译：形成氧化物隔离区的方法
公开(公告)号：US5977607A
公开(公告)日：1999-11-02
申请号：US447362
申请日：1995-05-23
申请人： Robert Louis Hodges , Frank Randolph Bryant , Fusen E. Chen , Che-Chia Wei
发明人： Robert Louis Hodges , Frank Randolph Bryant , Fusen E. Chen , Che-Chia Wei
IPC分类号： H01L21/32 , H01L21/762 , H01L29/00
CPC分类号： H01L21/32 , H01L21/76202
摘要： A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.
摘要翻译：提供一种用于形成集成电路的隔离氧化物区域的方法和根据该集成电路形成的集成电路。在衬底的一部分上形成衬垫氧化物层。在衬垫氧化物层上形成第一氮化硅层。然后在第一氮化硅层上形成多晶硅缓冲层。在多晶硅层上形成第二氮化硅层。在第二氮化硅层上形成并图案化光致抗蚀剂层。通过第二氮化硅层和多晶硅缓冲层蚀刻开口以暴露第一氮化硅层的一部分。至少在开口中暴露的多晶硅缓冲层上形成第三氮化硅区域。在开口中蚀刻第一氮化硅层。然后在开口中形成场氧化物区域。

4. 发明授权

US5930673A Method for forming a metal contact 失效
标题翻译：形成金属接触的方法
公开(公告)号：US5930673A
公开(公告)日：1999-07-27
申请号：US418122
申请日：1995-04-06
申请人： Fusen E. Chen , Fu-Tai Liou , Yih-Shung Lin , Girish A. Dixit , Che-Chia Wei
发明人： Fusen E. Chen , Fu-Tai Liou , Yih-Shung Lin , Girish A. Dixit , Che-Chia Wei
IPC分类号： H01L21/28 , C23C16/02 , C23C16/20 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/532 , H01L21/283
CPC分类号： H01L21/76843 , C23C16/0281 , C23C16/20 , H01L21/28512 , H01L21/32051 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method is provided for depositing aluminum thin film layers to form contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
摘要翻译：提供了一种用于在半导体集成电路器件中沉积铝薄膜层以形成接触的方法。所有或一些沉积过程在允许改善沉积的铝原子的表面迁移的温度下以相对较低的沉积速率进行。在这些条件下沉积的铝倾向于填充接触孔而不形成空隙。低温沉积步骤可以通过沉积铝来开始，而包含集成电路器件的晶片正在从沉积室内的较冷的温度加热。

5. 发明授权

US5444019A Semiconductor contact via structure and method 失效
标题翻译：半导体接触通过结构和方法
公开(公告)号：US5444019A
公开(公告)日：1995-08-22
申请号：US157571
申请日：1993-11-24
申请人： Fusen E. Chen , Girish A. Dixit , Che-Chia Wei
发明人： Fusen E. Chen , Girish A. Dixit , Che-Chia Wei
IPC分类号： H01L21/28 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/70 , H01L27/00
CPC分类号： H01L23/5226 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/76831 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive region. An opening is then formed through the insulating region to the conductive region. A thin barrier layer is deposited over the integrated circuit contact structure. A portion of the thin barrier layer is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall remains. Finally, a conductive metal layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer is deposited.
摘要翻译：提供了一种用于形成集成电路接触结构的方法。在半导体器件上形成导电区域。此后，在导电区域上形成绝缘层。然后通过绝缘区域形成到导电区域的开口。薄的势垒层沉积在集成电路接触结构上。通过反向溅射集成电路接触结构来去除薄势垒层的一部分，使得只有薄的阻挡侧壁保留。最后，在集成电路接触结构上沉积导电金属层。在一个实施例中，在沉积导电金属层之前烘烤集成电路接触结构。

6. 发明授权

US5108951A Method for forming a metal contact 失效
标题翻译：形成金属接触的方法
公开(公告)号：US5108951A
公开(公告)日：1992-04-28
申请号：US609883
申请日：1990-11-05
申请人： Fusen E. Chen , Fu-Tai Liou , Yih-Shung Lin , Girish A. Dixit , Che-Chia Wei
发明人： Fusen E. Chen , Fu-Tai Liou , Yih-Shung Lin , Girish A. Dixit , Che-Chia Wei
IPC分类号： H01L21/28 , C23C16/02 , C23C16/20 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/532
CPC分类号： H01L21/76843 , C23C16/0281 , C23C16/20 , H01L21/28512 , H01L21/32051 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

7. 发明授权

US06617242B1 Method for fabricating interlevel contacts of aluminum/refractory metal alloys 失效
$Method for fabricating interlevel contacts of aluminum/refractory metal alloys$
标题翻译：制造铝/难熔金属合金层间接触的方法
公开(公告)号：US06617242B1
公开(公告)日：2003-09-09
申请号：US08480543
申请日：1995-06-07
申请人： Fusen E. Chen , Fu-Tai Liou , Timothy E. Turner , Che-Chia Wei , Yih-Shung Lin , Girish Anant Dixit
发明人： Fusen E. Chen , Fu-Tai Liou , Timothy E. Turner , Che-Chia Wei , Yih-Shung Lin , Girish Anant Dixit
IPC分类号： H01L2144
CPC分类号： H01L21/76858 , H01L21/28512 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating interlevel contacts in semiconductor integrated circuits provides for formation of a contact opening through an insulating layer. A layer of refractory metal, or refractory metal alloy, is deposited over the surface of the integrated circuit chip. An aluminum layer is then deposited at a significantly elevated temperature, so that an aluminum/refractory metal alloy is formed at the interface between the aluminum layer and the refractory metal layer. Formation of such an alloy causes an expansion of the metal within the contact opening, thereby filling the contact opening and providing a smooth upper contour to the deposited aluminum layer.
摘要翻译：在半导体集成电路中制造层间接触的方法提供通过绝缘层形成接触开口。一层难熔金属或难熔金属合金沉积在集成电路芯片的表面上。然后在显着提高的温度下沉积铝层，使得在铝层和难熔金属层之间的界面处形成铝/难熔金属合金。这种合金的形成导致接触开口内的金属膨胀，从而填充接触开口并为沉积的铝层提供光滑的上部轮廓。

8. 发明授权

US06242811B1 Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature 失效
$Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature$
标题翻译：在铝沉积期间在高温下形成的铝 - 难熔金属合金的层间接触
公开(公告)号：US06242811B1
公开(公告)日：2001-06-05
申请号：US09080066
申请日：1998-05-15
申请人： Fusen E. Chen , Fu-Tai Liou , Timothy E. Turner , Che-Chia Wei , Yih-Shung Lin , Girish Anant Dixit
发明人： Fusen E. Chen , Fu-Tai Liou , Timothy E. Turner , Che-Chia Wei , Yih-Shung Lin , Girish Anant Dixit
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/28512 , H01L21/76846 , H01L21/76858 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： Interlevel contacts in semiconductor integrated circuits are fabricated by formation of a contact opening through an insulating layer. A layer of refractory metal, or refractory metal alloy, is deposited over the surface of the integrated circuit chip. An aluminum layer is then deposited at a significantly elevated temperature, so that an aluminum/refractory metal alloy is formed at the interface between the aluminum layer and the refractory metal layer. Formation of such an alloy causes an expansion of the metal within the contact opening, thereby filling the contact opening and providing a smooth upper contour to the deposited aluminum layer.
摘要翻译：通过形成通过绝缘层的接触开口来制造半导体集成电路中的层间接触。一层难熔金属或难熔金属合金沉积在集成电路芯片的表面上。然后在显着提高的温度下沉积铝层，使得在铝层和难熔金属层之间的界面处形成铝/难熔金属合金。这种合金的形成导致接触开口内的金属膨胀，从而填充接触开口并为沉积的铝层提供光滑的上部轮廓。

9. 发明授权

US5317192A Semiconductor contact via structure having amorphous silicon side walls 失效
标题翻译：具有非晶硅侧壁的半导体接触通孔结构
公开(公告)号：US5317192A
公开(公告)日：1994-05-31
申请号：US879190
申请日：1992-05-06
申请人： Fusen E. Chen , Girish A. Dixit , Che-Chia Wei
发明人： Fusen E. Chen , Girish A. Dixit , Che-Chia Wei
IPC分类号： H01L21/28 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/400
CPC分类号： H01L23/5226 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/76831 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive region. An opening is then formed through the insulating region to the conductive region. A thin barrier layer is deposited over the integrated circuit contact structure. A portion of the thin barrier layer is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall remains. Finally, a conductive metal layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer is deposited.
摘要翻译：提供了一种用于形成集成电路接触结构的方法。在半导体器件上形成导电区域。此后，在导电区域上形成绝缘层。然后通过绝缘区域形成到导电区域的开口。薄的势垒层沉积在集成电路接触结构上。通过反向溅射集成电路接触结构来去除薄势垒层的一部分，使得只有薄的阻挡侧壁保留。最后，在集成电路接触结构上沉积导电金属层。在一个实施例中，在沉积导电金属层之前烘烤集成电路接触结构。

10. 发明授权

US06287963B1 Method for forming a metal contact 失效
标题翻译：形成金属接触的方法
公开(公告)号：US06287963B1
公开(公告)日：2001-09-11
申请号：US08418257
申请日：1995-04-06
申请人： Fusen E. Chen , Fu-Tai Liou , Girish A. Dixit , Che-Chia Wei
发明人： Fusen E. Chen , Fu-Tai Liou , Girish A. Dixit , Che-Chia Wei
IPC分类号： H01L214763
CPC分类号： H01L23/53223 , C23C16/0281 , C23C16/20 , H01L21/28512 , H01L21/32051 , H01L21/7684 , H01L21/76877 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for depositing aluminum thin film layers to form contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The deposition step is periodically interrupted.
摘要翻译：提供了一种用于在半导体集成电路器件中沉积铝薄膜层以形成接触的方法。所有或一些沉积过程在允许沉积的铝原子的表面迁移的温度下以相对低的沉积速率发生。在这些条件下沉积的铝倾向于填充接触孔而不形成空隙。沉积步骤被周期性地中断。

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