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1. 发明授权

US07503020B2 IC layout optimization to improve yield 失效
标题翻译： IC布局优化提高产量
公开(公告)号：US07503020B2
公开(公告)日：2009-03-10
申请号：US11424922
申请日：2006-06-19
申请人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method of and service for optimizing an integrated circuit design to improve manufacturing yield. The invention uses manufacturing data and algorithms to identify areas with high probability of failures, i.e. critical areas. The invention further changes the layout of the circuit design to reduce critical area thereby reducing the probability of a fault occurring during manufacturing. Methods of identifying critical area include common run, geometry mapping, and Voronoi diagrams. Optimization includes but is not limited to incremental movement and adjustment of shape dimensions until optimization objectives are achieved and critical area is reduced.
摘要翻译：一种用于优化集成电路设计以提高制造产量的方法和服务。本发明使用制造数据和算法来识别故障概率高的区域，即关键区域。本发明进一步改变电路设计的布局以减少临界面积，从而降低在制造过程中发生故障的可能性。确定关键区域的方法包括通用运行，几何映射和Voronoi图。优化包括但不限于形状尺寸的增量移动和调整，直到达到优化目标并减小关键面积。

2. 发明申请

US20090100386A1 IC Layout Optimization to Improve Yield 有权
标题翻译： IC布局优化提高产量
公开(公告)号：US20090100386A1
公开(公告)日：2009-04-16
申请号：US12342353
申请日：2008-12-23
申请人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： Optimizing an integrated circuit design to improve manufacturing yield using manufacturing data and algorithms to identify areas with high probability of failures, i.e. critical areas. The process further changes the layout of the circuit design to reduce critical area thereby reducing the probability of a fault occurring during manufacturing. Methods of identifying critical area include common run, geometry mapping, and Voronoi diagrams. Optimization includes but is not limited to incremental movement and adjustment of shape dimensions until optimization objectives are achieved and critical area is reduced.
摘要翻译：使用制造数据和算法优化集成电路设计以提高制造产量，以识别故障概率高的区域，即关键区域。该过程进一步改变电路设计的布局以减少临界面积，从而降低制造过程中发生故障的可能性。确定关键区域的方法包括通用运行，几何映射和Voronoi图。优化包括但不限于形状尺寸的增量移动和调整，直到达到优化目标并减小关键面积。

3. 发明申请

US20070294648A1 IC Layout Optimization To Improve Yield 失效
标题翻译： IC布局优化提高产量
公开(公告)号：US20070294648A1
公开(公告)日：2007-12-20
申请号：US11424922
申请日：2006-06-19
申请人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Faye D. Baker , Albert M. Chu , Michael S. Gray , Jason Hibbeler , Daniel N. Maynard , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method of and service for optimizing an integrated circuit design to improve manufacturing yield. The invention uses manufacturing data and algorithms to identify areas with high probability of failures, i.e. critical areas. The invention further changes the layout of the circuit design to reduce critical area thereby reducing the probability of a fault occurring during manufacturing. Methods of identifying critical area include common run, geometry mapping, and Voronoi diagrams. Optimization includes but is not limited to incremental movement and adjustment of shape dimensions until optimization objectives are achieved and critical area is reduced.
摘要翻译：一种用于优化集成电路设计以提高制造产量的方法和服务。本发明使用制造数据和算法来识别故障概率高的区域，即关键区域。本发明进一步改变电路设计的布局以减少临界面积，从而降低在制造过程中发生故障的可能性。确定关键区域的方法包括通用运行，几何映射和Voronoi图。优化包括但不限于形状尺寸的增量移动和调整，直到达到优化目标并减小关键面积。

4. 发明授权

US07752589B2 Method, apparatus, and computer program product for displaying and modifying the critical area of an integrated circuit design 失效
标题翻译：用于显示和修改集成电路设计的关键区域的方法，装置和计算机程序产品
公开(公告)号：US07752589B2
公开(公告)日：2010-07-06
申请号：US11620059
申请日：2007-01-05
申请人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method, apparatus, and computer program product for visually indicating the interaction between one or more edges of a design that contribute to a defined critical area pattern.
摘要翻译：一种用于可视地指示有助于定义的关键区域图案的设计的一个或多个边缘之间的交互的方法，装置和计算机程序产品。

5. 发明申请

US20080168414A1 METHOD, APPARATUS, AND COMPUTER PROGRAM PRODUCT FOR DISPLAYING AND MODIFYING THE CRITICAL AREA OF AN INTEGRATED CIRCUIT DESIGN. 失效
标题翻译：用于显示和修改集成电路设计关键领域的方法，装置和计算机程序产品。
公开(公告)号：US20080168414A1
公开(公告)日：2008-07-10
申请号：US11620059
申请日：2007-01-05
申请人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
发明人： Robert J. Allen , Sarah C. Braasch , Matthew T. Guzowski , Jason D. Hibbeler , Daniel N. Maynard , Kevin W. McCullen , Evanthia Papadopoulou , Mervyn Y. Tan , Robert F. Walker
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method, apparatus, and computer program product for visually indicating the interaction between one or more edges of a design that contribute to a defined critical area pattern.
摘要翻译：一种用于可视地指示有助于定义的关键区域图案的设计的一个或多个边缘之间的交互的方法，装置和计算机程序产品。

6. 发明申请

US20080195989A1 CONTENT BASED YIELD PREDICTION OF VLSI DESIGNS 失效
标题翻译：基于内容的VLSI设计预测
公开(公告)号：US20080195989A1
公开(公告)日：2008-08-14
申请号：US12101599
申请日：2008-04-11
申请人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
发明人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
IPC分类号： G06F9/45
CPC分类号： G06F17/5045
摘要： An integrated circuit and program product for predicting yield of a VLSI design. An integrated circuit is provided including a system for identifying and grouping sub-circuits contained within an integrated circuit design by circuit type; a critical area calculation system for determining critical area values for different regions, wherein each different region is associated with a circuit type; a tallying system for calculating a plurality of tallies of critical area values based on circuit type; and a plurality of modeling subsystems for separately modeling each of the plurality of tallies based on circuit type.
摘要翻译：一种用于预测VLSI设计产量的集成电路和程序产品。提供一种集成电路，包括用于通过电路类型识别和分组集成电路设计中包含的子电路的系统; 用于确定不同区域的临界面积值的关键区域计算系统，其中每个不同区域与电路类型相关联; 用于基于电路类型计算多个临界面积值的计数系统; 以及多个建模子系统，用于基于电路类型对所述多个提议中的每一个进行单独建模。

7. 发明授权

US07389480B2 Content based yield prediction of VLSI designs 有权
标题翻译：基于内容的VLSI设计的产量预测
公开(公告)号：US07389480B2
公开(公告)日：2008-06-17
申请号：US10908342
申请日：2005-05-09
申请人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
发明人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
IPC分类号： G06F17/50
CPC分类号： G06F17/5045
摘要： A system, method and program product for predicting yield of a VLSI design. A method is provided including the steps of: identifying and grouping sub-circuits contained within an integrated circuit design by type; calculating critical area values for regions within the integrated circuit design; and applying different yield models to critical area values based on the types of the regions used to calculate the critical area values, wherein each yield model is dependent on a type.
摘要翻译：一种用于预测VLSI设计产量的系统，方法和程序产品。提供了一种方法，包括以下步骤：通过类型识别和分组集成电路设计中包含的子电路; 计算集成电路设计中区域的关键面积值; 以及基于用于计算临界面积值的区域的类型将不同的屈服模型应用于临界区域值，其中每个产量模型依赖于类型。

8. 发明授权

US07661081B2 Content based yield prediction of VLSI designs 失效
标题翻译：基于内容的VLSI设计的产量预测
公开(公告)号：US07661081B2
公开(公告)日：2010-02-09
申请号：US12101599
申请日：2008-04-11
申请人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
发明人： Robert J. Allen , Daria R. Dooling , Jason D. Hibbeler , Daniel N. Maynard , Sarah C. Prue , Ralph J. Williams
IPC分类号： G06F17/50
CPC分类号： G06F17/5045
摘要： An integrated circuit system and program product for predicting yield of a VLSI design. An integrated circuit system is provided including a system for identifying and grouping sub-circuits contained within an integrated circuit design by circuit type; a critical area calculation system for determining critical area values for different regions, wherein each different region is associated with a circuit type; a tallying system for calculating a plurality of tallies of critical area values based on circuit type; and a plurality of modeling subsystems for separately modeling each of the plurality of tallies based on circuit type.
摘要翻译：一种用于预测VLSI设计产量的集成电路系统和程序产品。提供一种集成电路系统，包括用于通过电路类型识别和集成集成电路设计中所包含的子电路的系统; 用于确定不同区域的临界面积值的关键区域计算系统，其中每个不同区域与电路类型相关联; 用于基于电路类型计算多个临界面积值的计数系统; 以及多个建模子系统，用于基于电路类型对所述多个提议中的每一个进行单独建模。

9. 发明授权

US07893468B2 Optical sensor including stacked photodiodes 有权
标题翻译：光学传感器包括堆叠的光电二极管
公开(公告)号：US07893468B2
公开(公告)日：2011-02-22
申请号：US12129716
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L29/72
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14641 , H01L27/14687
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

10. 发明授权

US07883916B2 Optical sensor including stacked photosensitive diodes 有权
标题翻译：光学传感器包括堆叠感光二极管
公开(公告)号：US07883916B2
公开(公告)日：2011-02-08
申请号：US12129714
申请日：2008-05-30
申请人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
发明人： Jeffrey P. Gambino , Daniel N. Maynard , Kevin N. Ogg , Richard J. Rassel , Raymond J. Rosner
IPC分类号： H01L21/00
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。感测装置可以在第一和第二光敏二极管之间共享。

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