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    • 1. 发明授权
    • System, method, and service for dynamically selecting an optimum message pathway
    • 用于动态选择最佳消息路径的系统,方法和服务
    • US07957363B2
    • 2011-06-07
    • US11139799
    • 2005-05-26
    • Robert Glenn DeenJames Harvey KaufmanTobin Jon Lehman
    • Robert Glenn DeenJames Harvey KaufmanTobin Jon Lehman
    • H04L12/28
    • H04L67/327H04L45/12H04L51/14
    • A message pathway selection system dynamically selects an optimum message pathway for transmitting messages. The system dynamically optimizes a message pathway according to various criteria such as, for example, efficiency, economy, data requirements, auditing requirements, security, data size, etc. The system can direct a message to bypass an infrastructure messaging server, using a direct message pathway. The system can also switch from an infrastructure messaging server to a direct method. The system can also utilize an infrastructure messaging pathway either as an alternative or in parallel with the direct message pathway. The system allows an application to use a single communication system for both a direct mode and an infrastructure mode of data transfer. The present system can bypass the infrastructure message pathway, thus reducing message latency, number of messages sent, and improving overall bandwidth.
    • 消息路径选择系统动态地选择用于发送消息的最佳消息路径。 系统根据各种标准动态优化消息路径,例如效率,经济性,数据需求,审计要求,安全性,数据大小等。系统可以使用直接的方式指导消息绕过基础设施消息传递服务器 消息通路。 系统还可以从基础架构消息传递服务器切换到直接方法。 该系统还可以利用基础设施消息传递路径作为替代或与直接消息路径并行。 系统允许应用程序使用单个通信系统进行数据传输的直接模式和基础架构模式。 本系统可以绕过基础设施消息通道,从而减少消息延迟,发送消息数量,提高整体带宽。
    • 2. 发明授权
    • Designation and opportunistic tracking of valuables
    • 贵重物品的指定和机会跟踪
    • US06774811B2
    • 2004-08-10
    • US09773597
    • 2001-02-02
    • James Harvey KaufmanCameron Shea MinerJoann Ruvolo
    • James Harvey KaufmanCameron Shea MinerJoann Ruvolo
    • G08B522
    • G06Q10/08G01S5/02G06Q20/203
    • An item of value to one or more individuals in a group is tracked wherein each valuable object is tagged, and one or more members of the group carry a personal information management (PIM) device equipped with a sensor which constantly scans for the presence of a known valuable. The sensor is able to detect the type of tag(s) used by the group of individuals. Whenever a member of the group carrying a PIM device comes across a known tagged valuable, the system detects it and logs the location, valuable ID, and user ID in a database. Optionally, visual data is captured from the valuable and compared against a standard located in a database in order to locate the valuable.
    • 跟踪一组中的一个或多个个体的价值,其中每个有价值对象被标记,并且该组中的一个或多个成员携带配备有传感器的个人信息管理(PIM)设备,该传感器不断扫描存在 已知有价值。 传感器能够检测该组个体使用的标签类型。 每当携带PIM设备的组成员遇到已知的标签有价值时,系统将检测它并将位置,有价值的ID和用户ID记录在数据库中。 可选地,可视数据从有价值的捕获并与位于数据库中的标准进行比较,以便定位有价值的。
    • 4. 发明授权
    • Magnetic memory array using magnetic tunnel junction devices in the
memory cells
    • 磁存储阵列在存储单元中使用磁性隧道结器件
    • US5640343A
    • 1997-06-17
    • US618004
    • 1996-03-18
    • William Joseph GallagherJames Harvey KaufmanStuart Stephen Papworth ParkinRoy Edwin Scheuerlein
    • William Joseph GallagherJames Harvey KaufmanStuart Stephen Papworth ParkinRoy Edwin Scheuerlein
    • G11C11/15G11C11/16H01L21/8246H01L27/22G11C13/00
    • H01L27/224B82Y10/00G11C11/15G11C11/16
    • A nonvolatile magnetic random access memory (MRAM) is an array of individual magnetic memory cells. Each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series. Each MTJ is formed of a pinned ferromagnetic layer whose magnetization direction is prevented from rotating, a free ferromagnetic layer whose magnetization direction is free to rotate between states of parallel and antiparallel to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier between and in contact with the two ferromagnetic layers. Each memory cell has a high resistance that is achieved in a very small surface area by controlling the thickness, and thus the electrical barrier height, of the tunnel barrier layer. The memory cells in the array are controlled by only two lines, and the write currents to change the magnetic state of an MTJ, by use of the write currents' inherent magnetic fields to rotate the magnetization of the free layer, do not pass through the tunnel barrier layer. All MTJ elements, diodes, and contacts are vertically arranged at the intersection regions of the two lines and between the two lines to minimize the total MRAM surface area. The power expended to read or sense the memory cell's magnetic state is reduced by the high resistance of the MTJ and by directing the sensing current through a single memory cell.
    • 非易失磁性随机存取存储器(MRAM)是单个磁存储单元阵列。 每个存储单元是磁性隧道结(MTJ)元件和串联电连接的二极管。 每个MTJ由其磁化方向被阻止旋转的被钉扎的铁磁层形成,一个自由铁磁层,其磁化方向在被固定的铁磁层的固定磁化平行和反平行的状态之间自由旋转;以及绝缘隧道势垒 并与两个铁磁层接触。 每个存储单元具有通过控制隧道势垒层的厚度以及因此控制电势势垒高度而在非常小的表面积中实现的高电阻。 阵列中的存储单元仅由两条线控制,并且通过使用写入电流的固有磁场来旋转自由层的磁化,改变MTJ的磁状态的写入电流不会通过 隧道势垒层。 所有MTJ元件,二极管和触点垂直布置在两条线和两条线之间的交叉区域,以最小化总MRAM表面积。 消耗读取或感测存储单元的磁状态的功率被MTJ的高电阻降低,并通过将感测电流引导通过单个存储单元。
    • 7. 发明授权
    • Magnetic recording disk with metal nitride texturing layer
    • 带有金属氮化物纹理层的磁记录盘
    • US5705287A
    • 1998-01-06
    • US309274
    • 1994-09-20
    • Mary Frances DoernerJames Harvey KaufmanSerhat MetinSeyyed Mohammad Taghi MirzamaaniAnthony Wai Wu
    • Mary Frances DoernerJames Harvey KaufmanSerhat MetinSeyyed Mohammad Taghi MirzamaaniAnthony Wai Wu
    • G11B5/66G11B5/64G11B5/72G11B5/73G11B5/738G11B5/84G11B5/70
    • G11B5/7325G11B5/72G11B5/8404
    • A thin film cobalt alloy magnetic recording disk has a metal nitride layer located between the disk substrate and the top surface of the disk to provide texturing of the disk at the head-disk interface. The texturing layer is made up of generally contiguous clusters of aluminum nitride (AlN) with rounded upper surfaces that are formed on top of the substrate and under the conventional Cr underlayer. The AlN texturing layer is formed by sputtering an Al target in the presence of N.sub.2 gas. The subsequently sputter-deposited Cr underlayer, cobalt alloy magnetic layer and protective amorphous carbon overcoat replicate the upper surface of the contiguous AlN clusters, resulting in a textured surface at the head-disk interface. The AlN texturing layer may also be sputter deposited above the magnetic layer in the middle of the protective carbon overcoat. The density and size of the AlN clusters in the texturing layer, and thus the texture of the completed disk at the head-disk interface, are controlled by the amount of N.sub.2, the sputtering power and pressure, and the substrate temperature.
    • 薄膜钴合金磁记录盘具有位于盘基板和盘顶部之间的金属氮化物层,以在磁头 - 磁盘接口处提供盘的纹理化。 纹理层由通常连续的氮化铝(AlN)簇组成,其具有圆形的上表面,其形成在衬底的顶部和在常规Cr底层下方。 AlN纹理层通过在N 2气体存在下溅射Al靶而形成。 随后溅射沉积的Cr底层,钴合金磁性层和保护性无定形碳外涂层复制邻接的AlN簇的上表面,导致在磁头 - 磁盘界面处的纹理表面。 AlN纹理层也可以在保护性碳覆盖层中间的磁性层上方溅射沉积。 纹理层中的AlN簇的密度和尺寸以及由此在磁头 - 磁盘接口处完成的磁盘的纹理受到N2的量,溅射功率和压力以及衬底温度的控制。