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    • 8. 发明申请
    • Portable Unit for Treating Chronic Pain
    • 便携式单位治疗慢性疼痛
    • US20080167697A1
    • 2008-07-10
    • US12050463
    • 2008-03-18
    • Robert G. Johnson
    • Robert G. Johnson
    • A61N1/34
    • A61N1/36021A61N1/0456A61N1/378
    • A portable pain treatment unit includes: a first pulse generator configured to deliver pulses in a frequency range typical for interferential treatment; a second pulse generator configured to deliver pulses in the frequency range for transcutaneous electrical nerve stimulator (TENS) treatment; electrodes operatively connected with the first and second pulse generators that are configured for application to a treatment area; and a power source operatively connected to the first and second pulse generators. A device of this configuration enables the patient to receive either IF or TENS treatment at a location of his/her choosing rather than being forced to receive IF treatment in a clinical setting.
    • 一种便携式疼痛治疗单元包括:第一脉冲发生器,被配置为递送频率范围内的脉冲以进行干涉治疗; 第二脉冲发生器,被配置为在经皮电神经刺激器(TENS)治疗的频率范围内递送脉冲; 与被配置为用于治疗区域的第一和第二脉冲发生器可操作地连接的电极; 以及可操作地连接到第一和第二脉冲发生器的电源。 该配置的装置使得患者能够在他/她选择的位置接收IF或TENS治疗,而不是被迫在临床环境中接受IF治疗。
    • 9. 发明授权
    • Method of making slotted diaphragm semiconductor devices
    • 制造开槽隔膜半导体器件的方法
    • US4867842A
    • 1989-09-19
    • US194366
    • 1988-05-16
    • Philip J. BohrerRobert G. Johnson
    • Philip J. BohrerRobert G. Johnson
    • G01F1/684G01F1/698
    • G01F1/698G01F1/6845
    • An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface and includes an electric, thermal-to-electric, or electric-to-thermal element. The diaphragm apparatus forms a slotted diaphragm substantially covering the depression. The slotted diaphragm includes one or more slots sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot or slots will completely undercut the diaphragm and form the depression. The electric, thermal-to-electric, or electric-to-thermal element is substantially supported by the diaphragm and, therefore, is substantially thermally and physically isolated from the semiconductor body.
    • 集成半导体器件包括具有相对于半导体本体中的晶体结构具有预定取向的第一表面的半导体本体。 半导体本体具有形成在主体的第一表面中的凹陷。 薄膜材料层覆盖第一表面的至少一部分,并且包括电,热到电或电热元件。 隔膜装置形成基本覆盖凹陷的开槽隔膜。 开槽隔膜包括一个或多个尺寸和取向的狭槽,使得在装置的制造中,放置在狭槽或槽上的各向异性蚀刻将完全底切隔膜并形成凹陷。 电,热电对或电热元件基本上由隔膜支撑,因此基本上与半导体本体热隔离并物理隔离。