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1. 再颁专利

USRE36136E Thermal sensor 失效
标题翻译：热传感器
公开(公告)号：USRE36136E
公开(公告)日：1999-03-09
申请号：US627598
申请日：1996-04-04
申请人： Robert E. Higashi , James O. Holmen , Robert G. Johnson
发明人： Robert E. Higashi , James O. Holmen , Robert G. Johnson
IPC分类号： H01L27/16 , H01L31/08
CPC分类号： G01J5/20 , H01L27/16 , Y10T29/49085
摘要： A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlie the integrated circuit and bus lines on the substrate surface below.
摘要翻译：高填充因子设计的二级红外检测器成像阵列。上部微桥检测器电平在下方的基板表面上的集成电路和总线之间隔开并覆盖。

2. 发明授权

US4914742A Thin film orthogonal microsensor for air flow and method 失效
标题翻译：用于空气流动的薄膜正交微传感器和方法
公开(公告)号：US4914742A
公开(公告)日：1990-04-03
申请号：US129204
申请日：1987-12-07
申请人： Robert E. Higashi , James O. Holmen , Steven D. James , Robert G. Johnson , Jeffrey A. Ridley
发明人： Robert E. Higashi , James O. Holmen , Steven D. James , Robert G. Johnson , Jeffrey A. Ridley
IPC分类号： G01P5/12 , B81B3/00 , B81C1/00 , G01F1/68 , G01F1/684 , G01F1/692 , H01L21/308
CPC分类号： G01F1/6845 , H01L21/308 , H01H2001/0089 , Y10T428/12528
摘要： A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

3. 发明授权

US5300915A Thermal sensor 失效
标题翻译：热传感器
公开(公告)号：US5300915A
公开(公告)日：1994-04-05
申请号：US887495
申请日：1986-07-16
申请人： Robert E. Higashi , James O. Holmen , Robert G. Johnson
发明人： Robert E. Higashi , James O. Holmen , Robert G. Johnson
IPC分类号： H01L27/16 , H01L27/14 , G01J5/20 , G01J5/24 , H01L31/101
CPC分类号： G01J5/20 , H01L27/16 , Y10T29/49085
摘要： A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlies the integrated circuit and bus lines on the substrate surface below.
摘要翻译：高填充因子设计的二级红外检测器成像阵列。上部微桥检测器电平在下方的基板表面上的集成电路和总线之间间隔开并覆盖。

4. 发明授权

US4895616A Method for making thin film orthogonal microsensor for air flow 失效
标题翻译：制造薄膜正交微传感器用于气流的方法
公开(公告)号：US4895616A
公开(公告)日：1990-01-23
申请号：US342010
申请日：1989-04-24
申请人： Robert E. Higashi , James O. Holmen , Steven D. James , Robert G. Johnson , Jeffrey A. Ridley
发明人： Robert E. Higashi , James O. Holmen , Steven D. James , Robert G. Johnson , Jeffrey A. Ridley
IPC分类号： G01F1/684 , H01L21/308
CPC分类号： G01F1/6845 , H01L21/308 , H01H2001/0089
摘要： A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.
摘要翻译：一种微桥空气流量传感器，其在氮化硅隔膜下方具有密封的蚀刻腔，使得空腔不容易受到残留膜或积聚在空腔内的其他材料的污染。腔体热隔离了封装在隔膜中的加热器和检测器。通过硅晶片的正面蚀刻来制造空腔。窄槽通过氮化硅膜制成，以露出铝的薄膜（400埃）矩形。第一次蚀刻除去在隔膜下方留下400埃非常浅的空腔的铝。然后将各向异性蚀刻引入浅空腔中以蚀刻硅凹坑。

5. 发明授权

US5534111A Thermal isolation microstructure 失效
标题翻译：热隔离微结构
公开(公告)号：US5534111A
公开(公告)日：1996-07-09
申请号：US172118
申请日：1988-02-29
申请人： G. Benjamin Hocker , James O. Holmen , Robert G. Johnson
发明人： G. Benjamin Hocker , James O. Holmen , Robert G. Johnson
IPC分类号： B81B3/00 , B81C1/00 , G01J5/04 , G01J5/10 , G01J5/20 , H01L27/16 , B44C1/22 , C23F1/02
CPC分类号： G01J5/02 , B81C1/0069 , G01J5/023 , G01J5/04 , G01J5/046 , H01L27/16 , B81B2203/0109
摘要： A thermal isolation microstructure fabricated by a process which allows the ultra thinning of support legs for the microdetector.
摘要翻译：通过允许微型检测器的支撑腿超薄的方法制造的热隔离微结构。

6. 发明授权

US4891977A Microbridge sensor bonding pad design for improved adhesion 失效
标题翻译：微桥传感器焊盘设计，提高粘附力
公开(公告)号：US4891977A
公开(公告)日：1990-01-09
申请号：US285272
申请日：1988-12-16
申请人： Robert G. Johnson , James O. Holmen , Jeffrey A. Ridley
发明人： Robert G. Johnson , James O. Holmen , Jeffrey A. Ridley
IPC分类号： G01F1/684
CPC分类号： G01F1/6845 , Y10T29/49101
摘要： An improved connector pad stack structure for use in microstructure devices having a silicon nitride surface in which the sensor metal such as platinum or Ni-Fe is eliminated from the pad bonding site and only adhesion promoting metals are used on the Si.sub.3 N.sub.4 to provide a stronger, more durable and reliable pad stack.
摘要翻译：用于具有氮化硅表面的微结构器件中的改进的连接器焊盘叠层结构，其中传感器金属如铂或Ni-Fe从焊接接合位置消除，并且仅使用促进粘附的金属用于Si 3 N 4，以提供更强的，更耐用可靠的垫堆。

7. 发明授权

US4952904A Adhesion layer for platinum based sensors 失效
标题翻译：铂金传感器附着层
公开(公告)号：US4952904A
公开(公告)日：1990-08-28
申请号：US289098
申请日：1988-12-23
申请人： Robert G. Johnson , James O. Holmen , Ronald B. Foster , Uppili Sridhar
发明人： Robert G. Johnson , James O. Holmen , Ronald B. Foster , Uppili Sridhar
IPC分类号： G01P5/12 , G01F1/68 , G01F1/684 , G01F1/692 , H01C7/00
CPC分类号： G01F1/6845 , H01C7/006
摘要： The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

8. 发明授权

US5220189A Micromechanical thermoelectric sensor element 失效
标题翻译：微机电热传感元件
公开(公告)号：US5220189A
公开(公告)日：1993-06-15
申请号：US511370
申请日：1983-07-06
申请人： Robert E. Higashi , Robert G. Johnson
发明人： Robert E. Higashi , Robert G. Johnson
IPC分类号： B01L3/00 , G01J5/12 , H01L27/16 , H01L35/32
CPC分类号： H01L35/32 , G01J5/12 , H01L27/16 , Y10S257/93
摘要： A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.
摘要翻译：适于响应于热辐射的热电传感器元件能够制造成诸如硅的单晶半导体装置上的传感器阵列。在感测表面下方提供各向异性蚀刻的凹坑，并且凹坑通常对应于传感器元件的几何形状。几何形状被选择为矩形并且沿着用于制造器件的特定晶体结构的选定方向落下，从而允许高密度的传感器元件。传感器元件由两种不同的金属制成，以提供热电效应。

9. 发明授权

US4739657A Resistance with linear temperature coefficient 失效
标题翻译：电阻与线性温度系数
公开(公告)号：US4739657A
公开(公告)日：1988-04-26
申请号：US65205
申请日：1987-06-22
申请人： Robert E. Higashi , Robert G. Johnson
发明人： Robert E. Higashi , Robert G. Johnson
IPC分类号： G01F1/684 , G01F1/68
CPC分类号： G01F1/6845
摘要： The sensors and heater of a microbridge flow sensor are each compensated for non-linear curvature of the resistance versus temperature curve by the use of a section of permalloy in series with a section of platinum thin film resistor. The platinum exhibits non-linearity in one direction and the permalloy exhibits non-linearity in the opposite direction.
摘要翻译：微桥流量传感器的传感器和加热器各自通过使用与铂薄膜电阻器的一部分串联的坡莫合金部分来补偿电阻对温度曲线的非线性曲率。铂在一个方向上呈现非线性，坡莫合金在相反方向表现出非线性。

10. 发明授权

US4624137A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4624137A
公开(公告)日：1986-11-25
申请号：US782197
申请日：1985-10-01
申请人： Robert G. Johnson , Robert E. Higashi
发明人： Robert G. Johnson , Robert E. Higashi
IPC分类号： G01F1/684 , H01L27/16 , G01F1/68
CPC分类号： G01F1/6845 , H01L27/16
摘要： A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises a member comprising a thermal-to-electric transducer or static electric element or electrical-to-thermal element, the member having a predetermined configuration suspended over the depression. The member is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.
摘要翻译：一种半导体器件，包括半导体本体，其具有形成在本体的第一表面中的凹陷。该装置还包括包括热电转换器或静电元件或电热元件的构件，该构件具有悬挂在凹部上的预定构型。所述构件至少在一个位置处连接到所述第一表面，所述凹部通过所述预定构造的至少一部分围绕所述第一表面。凹陷在元件和半导体本体之间提供了实质的物理和热隔离。以这种方式，集成半导体器件提供在换能器或元件与半导体主体之间的实质物理和热隔离的环境。

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