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1. 发明授权

US09330926B2 Fabrication of a silicon structure and deep silicon etch with profile control 有权
标题翻译：通过轮廓控制制造硅结构和深度硅蚀刻
公开(公告)号：US09330926B2
公开(公告)日：2016-05-03
申请号：US12338950
申请日：2008-12-18
申请人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
发明人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了将特征蚀刻成具有稳态气流的硅层的方法。提供了包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

2. 发明授权

US08871105B2 Method for achieving smooth side walls after Bosch etch process 有权
标题翻译：博世蚀刻工艺后实现平滑侧壁的方法
公开(公告)号：US08871105B2
公开(公告)日：2014-10-28
申请号：US13416465
申请日：2012-03-09
申请人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
发明人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译：提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并且产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

3. 发明申请

US20130237062A1 METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS 有权
标题翻译：在铺设过程之后实现平滑侧壁的方法
公开(公告)号：US20130237062A1
公开(公告)日：2013-09-12
申请号：US13416465
申请日：2012-03-09
申请人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
发明人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译：提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

4. 发明授权

US08609548B2 Method for providing high etch rate 有权
标题翻译：提供高蚀刻速率的方法
公开(公告)号：US08609548B2
公开(公告)日：2013-12-17
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

5. 发明申请

US20120309194A1 METHOD FOR PROVIDING HIGH ETCH RATE 有权
标题翻译：提供高刻蚀速率的方法
公开(公告)号：US20120309194A1
公开(公告)日：2012-12-06
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

6. 发明授权

US08440473B2 Use of spectrum to synchronize RF switching with gas switching during etch 有权
标题翻译：在蚀刻期间使用频谱来同步RF切换与气体切换
公开(公告)号：US08440473B2
公开(公告)日：2013-05-14
申请号：US13154075
申请日：2011-06-06
申请人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
发明人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

7. 发明申请

US20070269721A1 METHOD AND APPARATUS FOR PROVIDING MASK IN SEMICONDUCTOR PROCESSING 有权
标题翻译：用于在半导体处理中提供掩模的方法和装置
公开(公告)号：US20070269721A1
公开(公告)日：2007-11-22
申请号：US11383835
申请日：2006-05-17
申请人： Yoojin Kim , Camelia Rusu , Jonathan Kim
发明人： Yoojin Kim , Camelia Rusu , Jonathan Kim
IPC分类号： C03C15/00 , C03C25/68 , B44C1/22 , C23F1/00 , G03F1/00
CPC分类号： H01L21/31144 , H01J37/32082 , H01J2237/3342 , H01L21/0273 , H01L21/31122 , H01L21/32139
摘要： Disclosed is a method for processing a two layer mask for use in fabrication of semiconductor devices whereby the critical dimension (CD) of a semiconductor device being fabricated with the mask can be controlled. After forming a carbon mask layer and a silicon containing photoresist layer on the carbon mask, a two-step process forms openings in the carbon mask layer, as required for subsequent device fabrication. The structure is placed in a plasma processing chamber, and an oxygen plasma is employed to partially etch the carbon layer. The oxygen plasma reacts with silicon in the photoresist to form a hard silicon oxide layer on the surface of the photoresist. A hydrogen plasma is then employed to complete the etch through the carbon layer with a reduced critical dimension. Damage to the silicon containing photoresist layer is kept to a minimum during the plasma etch process by limiting the low frequency RF power.
摘要翻译：公开了一种用于制造半导体器件的双层掩模的处理方法，由此可以控制用掩模制造的半导体器件的临界尺寸（CD）。在碳掩模上形成碳掩模层和含硅光致抗蚀剂层之后，根据随后的器件制造的需要，两步法在碳掩模层中形成开口。将该结构放置在等离子体处理室中，并且使用氧等离子体来部分蚀刻碳层。氧等离子体与光致抗蚀剂中的硅反应，在光致抗蚀剂的表面上形成硬的氧化硅层。然后使用氢等离子体来完成通过具有减小的临界尺寸的碳层的蚀刻。通过限制低频RF功率，在等离子体蚀刻工艺期间，使含硅光致抗蚀剂层的损伤保持最小。

8. 发明授权

US07144521B2 High aspect ratio etch using modulation of RF powers of various frequencies 有权
标题翻译：使用各种频率的RF功率调制的高纵横比蚀刻
公开(公告)号：US07144521B2
公开(公告)日：2006-12-05
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。向处理室提供蚀刻剂气体。提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

9. 发明申请

US20110244686A1 INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH 有权
标题翻译：无机快速替代硅蚀刻工艺
公开(公告)号：US20110244686A1
公开(公告)日：2011-10-06
申请号：US12751635
申请日：2010-03-31
申请人： Tsuyoshi Aso , Camelia Rusu
发明人： Tsuyoshi Aso , Camelia Rusu
IPC分类号： H01L21/467
CPC分类号： H01L21/76898 , H01L21/30655
摘要： A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises providing a flow of sidewall inorganic deposition phase gas comprising a silicon containing compound gas and at least one of oxygen, nitrogen or NOx, into the plasma processing chamber, forming a plasma from the sidewall deposition phase gas in the plasma processing chamber, and stopping the flow of the sidewall deposition gas into the plasma processing chamber. The etch phase comprises, providing a flow of an etching gas comprising a halogen component, forming a plasma from the etching gas in the plasma processing chamber, and stopping the flow of the etching gas.
摘要翻译：提供了一种在等离子体处理室中将特征蚀刻到设置在掩模下方的硅衬底中的方法。通过包括多个周期的掩模蚀刻硅衬底，其中每个循环包括侧壁沉积阶段和蚀刻阶段。侧壁沉积阶段包括提供包含含硅化合物气体和氧，氮或NOx中的至少一种的侧壁无机沉积相气体流到等离子体处理室中，在等离子体处理中从侧壁沉积相气体形成等离子体并且阻止侧壁沉积气体流入等离子体处理室中。蚀刻阶段包括提供包括卤素组分的蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，并停止蚀刻气体的流动。

10. 发明授权

US07749353B2 High aspect ratio etch using modulation of RF powers of various frequencies 有权
标题翻译：使用各种频率的RF功率调制的高纵横比蚀刻
公开(公告)号：US07749353B2
公开(公告)日：2010-07-06
申请号：US11525602
申请日：2006-09-21
申请人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric A. Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。向处理室提供蚀刻剂气体。提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

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