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1. 发明授权

US08440473B2 Use of spectrum to synchronize RF switching with gas switching during etch 有权
标题翻译：在蚀刻期间使用频谱来同步RF切换与气体切换
公开(公告)号：US08440473B2
公开(公告)日：2013-05-14
申请号：US13154075
申请日：2011-06-06
申请人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
发明人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

2. 发明申请

US20090142930A1 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效
标题翻译：通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
公开(公告)号：US20090142930A1
公开(公告)日：2009-06-04
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译：一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定的工艺条件下同时实现两个不同等离子体工艺参数的目标值。

3. 发明申请

US20090057269A1 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection 有权
标题翻译：在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20090057269A1
公开(公告)日：2009-03-05
申请号：US11899613
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C03C25/68
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

4. 发明申请

US20090218317A1 METHOD TO CONTROL UNIFORMITY USING TRI-ZONE SHOWERHEAD 失效
标题翻译：使用TRI-ZONE SHOWERHEAD控制均匀性的方法
公开(公告)号：US20090218317A1
公开(公告)日：2009-09-03
申请号：US12039350
申请日：2008-02-28
申请人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
发明人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
摘要翻译：本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置。该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体气体处理量。喷头构造成为处理量提供一种或多种处理气体。喷头具有两个或更多个分配区，每个分配区可独立控制。

5. 发明申请

US20090056629A1 Cathode liner with wafer edge gas injection in a plasma reactor chamber 有权
标题翻译：阴极衬管，在等离子体反应器腔中注入晶圆边缘气体
公开(公告)号：US20090056629A1
公开(公告)日：2009-03-05
申请号：US11899614
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23C16/513
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32642 , H01L21/3065 , H01L2924/19042
摘要： The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge.
摘要翻译：本公开涉及用于等离子体反应器室中的晶片支撑件，其中晶片支撑件具有与晶片边缘相邻并且围绕晶片边缘的晶片边缘气体注入器。

6. 发明申请

US20110068082A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION 失效
标题翻译：在具有独立波形边缘过程气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20110068082A1
公开(公告)日：2011-03-24
申请号：US12954087
申请日：2010-11-24
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

7. 发明申请

US20090275206A1 PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 审中-公开
标题翻译：采用多区域气体分配的等离子体过程改进关键尺寸偏差的均匀性
公开(公告)号：US20090275206A1
公开(公告)日：2009-11-05
申请号：US12143146
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.
摘要翻译：钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。蚀刻速率的径向分布由第一和第二流速的比率控制。蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。

8. 发明申请

US20090272492A1 PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 失效
标题翻译：具有中心多区域气体分配的等离子体反应器，用于改进关键尺寸偏差的均匀性
公开(公告)号：US20090272492A1
公开(公告)日：2009-11-05
申请号：US12143092
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.
摘要翻译：用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。

9. 发明申请

US20090156011A1 Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor 审中-公开
标题翻译：通过改变等离子体反应器中的天花板到晶片间隙来控制CD偏压和CD微载荷的方法
公开(公告)号：US20090156011A1
公开(公告)日：2009-06-18
申请号：US12001986
申请日：2007-12-12
申请人： Rodolfo P. Belen , Edward P. Hammond, IV , Dan Katz , Valentin N. Todorow , Brian K. Hatcher , Alexander M. Paterson
发明人： Rodolfo P. Belen , Edward P. Hammond, IV , Dan Katz , Valentin N. Todorow , Brian K. Hatcher , Alexander M. Paterson
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L22/20
摘要： In a plasma etch process, critical dimension (CD), CD bias and CD bias microloading are controlled independently of plasma process conditions or parameters, such as RF power levels, pressure and gas flow rate, by depressing or elevating the workpiece support pedestal to vary the gap between the workpiece and the chamber ceiling facing the workpiece, using an axially adjustable workpiece support.
摘要翻译：在等离子体蚀刻工艺中，临时尺寸（CD），CD偏压和CD偏压微载荷独立于等离子体工艺条件或参数（例如RF功率水平，压力和气体流量）被控制，通过按压或升高工件支撑座以改变使用可轴向调节的工件支撑件，工件与室顶面之间的工件间隙。

10. 发明申请

US20090139963A1 Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution 审中-公开
标题翻译：多重脉冲多重线圈源，用于控制等离子体离子密度的径向分布
公开(公告)号：US20090139963A1
公开(公告)日：2009-06-04
申请号：US11998821
申请日：2007-11-30
申请人： Theodoros Panagopoulos , Alexander M. Paterson , Shahid Rauf
发明人： Theodoros Panagopoulos , Alexander M. Paterson , Shahid Rauf
IPC分类号： C23F1/00
CPC分类号： H01J37/32165 , H01J37/321 , H01J37/32706
摘要： A method is provided for processing a workpiece supported on a support surface in a chamber of a plasma reactor. A process gas is introduced into the chamber and a plasma is generated with pulse-modulated RF power. The method comprises successively repeating the following cycle: (a) concentrating the plasma in the chamber in a center-high plasma ion distribution for a first on-time duration; (b) permitting plasma to drift during a first off-time duration away from the center-high plasma ion distribution; (c) concentrating the plasma in the chamber in an edge-high plasma ion distribution for a second on-time duration; and (d) permitting plasma to drift during a second off-time duration away from the edge-high plasma ion distribution. The method further comprises adjusting a plasma process rate near a center of the workpiece by adjusting a duty cycle of the first on-time and first off-time. The method also comprises adjusting a plasma process rate near a periphery of the workpiece by adjusting a duty cycle of the second on-time and second off-time.
摘要翻译：提供了一种用于处理支撑在等离子体反应器的腔室中的支撑表面上的工件的方法。将工艺气体引入室中，并且用脉冲调制的RF功率产生等离子体。该方法包括连续地重复以下循环：（a）将中心高等离子体离子分布中的等离子体浓缩在第一开启持续时间; （b）允许等离子体在离中心 - 高等离子体离子分布的第一关闭时间段期间漂移; （c）将边缘高等离子体离子分布中的等离子体集中在腔室中持续第二个开启时间; 和（d）允许等离子体在远离边缘高等离子体离子分布的第二截止时间期间漂移。该方法还包括通过调整第一导通时间和第一关断时间的占空比来调节工件中心附近的等离子体处理速率。该方法还包括通过调整第二导通时间和第二关断时间的占空比来调整工件周边附近的等离子体处理速率。

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