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1. 发明申请

US20050058087A1 Infrastructure for wireless lans 审中-公开
标题翻译：无线蓝牙的基础设施
公开(公告)号：US20050058087A1
公开(公告)日：2005-03-17
申请号：US10725818
申请日：2003-12-01
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04L12/28 , H04W8/26 , H04W52/00 , H04W84/12 , H04W88/08
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

2. 发明授权

US07653033B2 Infrastructure for wireless LANs 有权
标题翻译：无线局域网的基础设施
公开(公告)号：US07653033B2
公开(公告)日：2010-01-26
申请号：US10784588
申请日：2004-02-23
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04Q7/24 , H04L12/28
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

3. 发明授权

US08687610B2 Infrastructure for wireless LANS 有权
标题翻译：无线局域网的基础设施
公开(公告)号：US08687610B2
公开(公告)日：2014-04-01
申请号：US12633302
申请日：2009-12-08
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04W4/00 , H04L12/28
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

4. 发明申请

US20100128710A1 INFRASTRUCTURE FOR WIRELESS LANS 有权
标题翻译：无线LAN的基础设施
公开(公告)号：US20100128710A1
公开(公告)日：2010-05-27
申请号：US12633302
申请日：2009-12-08
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04W40/02
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

5. 发明申请

US20140070341A1 Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM 有权
标题翻译： STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
公开(公告)号：US20140070341A1
公开(公告)日：2014-03-13
申请号：US13609780
申请日：2012-09-11
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82 , H01F38/00
CPC分类号： H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
摘要翻译：公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

6. 发明授权

US08614129B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08614129B2
公开(公告)日：2013-12-24
申请号：US11534855
申请日：2006-09-25
申请人： Robert Beach , Paul Bridger , Michael A. Briere
发明人： Robert Beach , Paul Bridger , Michael A. Briere
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

7. 发明授权

US08193612B2 Complimentary nitride transistors vertical and common drain 有权
标题翻译：不间断的氮化物晶体管垂直和普通漏极
公开(公告)号：US08193612B2
公开(公告)日：2012-06-05
申请号：US11056689
申请日：2005-02-11
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L29/20 , H01L31/0304
CPC分类号： H01L27/0605 , H01L29/2003
摘要： A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.
摘要翻译：公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

8. 发明授权

US08174051B2 III-nitride power device 有权
标题翻译： III族氮化物功率器件
公开(公告)号：US08174051B2
公开(公告)日：2012-05-08
申请号：US11821908
申请日：2007-06-26
申请人： Jianjun Cao , Yanping Ma , Robert Beach , Michael A. Briere
发明人： Jianjun Cao , Yanping Ma , Robert Beach , Michael A. Briere
IPC分类号： H01L21/02
CPC分类号： H01L21/8252 , H01L27/0605 , H01L29/0692 , H01L29/2003 , H01L29/402 , H01L29/7787
摘要： A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.
摘要翻译：一种III族氮化物功率器件，其包括围绕器件的功率电极之一的肖特基电极。

9. 发明授权

US08174048B2 III-nitride current control device and method of manufacture 有权
标题翻译： III族氮化物电流控制装置及其制造方法
公开(公告)号：US08174048B2
公开(公告)日：2012-05-08
申请号：US11040312
申请日：2005-01-21
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/872
摘要： A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
摘要翻译： III族氮化物器件包括用于产生名义上关闭的凹陷电极或增强模式的器件。通过设置凹陷电极，当电极接触不活动以阻止电流在器件中时，形成在两个III族氮化物材料的界面处的导电通道被中断。电极可以是肖特基接触或绝缘金属接触。可以提供两个欧姆接触以形成具有标称关闭特性的整流器件。形成有电极的凹部可以具有倾斜的侧面。电极可以结合设备的载流电极以多种几何形状形成。当电极不凹陷时，形成标称的器件或夹持电阻器。还通过将绝缘体提供非凹入的欧姆和肖特基接触到AlGaN层来形成二极管。

10. 发明授权

US08043906B2 Method of forming a III-nitride selective current carrying device including a contact in a recess 有权
标题翻译：在凹部中形成包含接触的III族氮化物选择性载流装置的方法
公开(公告)号：US08043906B2
公开(公告)日：2011-10-25
申请号：US11602706
申请日：2006-11-21
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/872
摘要： A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
摘要翻译： III族氮化物器件包括用于产生名义上关闭的凹陷电极或增强模式的器件。通过设置凹陷电极，当电极接触不活动以阻止电流在器件中时，形成在两个III族氮化物材料的界面处的导电通道被中断。电极可以是肖特基接触或绝缘金属接触。可以提供两个欧姆接触以形成具有标称关闭特性的整流器件。形成有电极的凹部可以具有倾斜的侧面。电极可以结合设备的载流电极以多种几何形状形成。当电极不凹陷时，形成标称的器件或夹持电阻器。还通过将绝缘体提供非凹入的欧姆和肖特基接触到AlGaN层来形成二极管。

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