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    • 1. 发明授权
    • Hand guard assembly for firearms
    • 枪支手枪组件
    • US07584567B1
    • 2009-09-08
    • US12110304
    • 2008-04-26
    • Frank DeSommaRobert B. Davies
    • Frank DeSommaRobert B. Davies
    • F41C23/16
    • F41G11/003F41C23/16
    • A hand guard assembly for a firearm including a barrel. The assembly includes a tubular unitary body mounted to surround a portion of the barrel substantially coaxially and in a transversely spaced relationship. The tubular body includes a plurality of air flow openings formed therethrough and at least one of a top rail formed as a unitary portion of the tubular body and extending rearwardly along an upper portion of a receiver of the firearm, side accessory rails formed as a unitary portion of the tubular body and on opposed sides of the tubular body, and a bottom accessory rail formed as a unitary portion of the tubular body and on a bottom surface of the tubular body. In the preferred method of fabricating the assembly, the body and any include accessory rails are extruded.
    • 用于包括枪管的枪支的护手组件。 该组件包括一个管状整体,其安装成围绕筒的一部分基本同轴并以横向间隔的关系。 管状体包括多个通过其形成的空气流动开口,以及形成为管状体的整体部分的顶部轨道中的至少一个,并且沿着枪械的接收器的上部向后延伸,侧部辅助导轨形成为整体 管状体的一部分和管状体的相对侧,以及形成为管状体的整体部分和管状体的底表面的底部辅助轨道。 在制造组件的优选方法中,主体和任何包括的附件轨道被挤压。
    • 8. 发明授权
    • Method and device for sensing a surface temperature of an insulated gate
semiconductor device
    • 用于感测绝缘栅极半导体器件的表面温度的方法和装置
    • US5451806A
    • 1995-09-19
    • US205238
    • 1994-03-03
    • Robert B. Davies
    • Robert B. Davies
    • H01L27/02H01L27/07H01L29/78H01L23/56H01L29/66
    • H01L29/7803H01L27/0211H01L27/07H01L2924/0002
    • A temperature sensing insulated gate semiconductor device (10) and method of using the insulated the insulated gate semiconductor device (10) for sensing a surface temperature. A lateral PNP bipolar transistor (63) is connected to a drain conductor (58) of an insulated gate field effect transistor (56). The insulated gate field effect transistor (56) is turned on, thereby shorting a collector conductor (64) with a base conductor (62) to form a diode connected lateral PNP bipolar transistor (63). A forward voltage is measured across an emitter-base junction of the diode connected lateral PNP bipolar transistor (63). The surface temperature of the insulated gate semiconductor device (10) is derived using the diode equation in conjunction with the current (67) and the forward voltage drop.
    • 一种温度感测绝缘栅极半导体器件(10)以及使用绝缘的绝缘栅极半导体器件(10)来感测表面温度的方法。 横向PNP双极晶体管(63)连接到绝缘栅场效应晶体管(56)的漏极导体(58)。 绝缘栅场效应晶体管(56)导通,由此用基极导体(62)短路集电极导体(64),形成二极管连接的横向PNP双极晶体管(63)。 在二极管连接的横向PNP双极晶体管(63)的发射极 - 基极结两端测量正向电压。 绝缘栅半导体器件(10)的表面温度是使用二极管方程结合电流(67)和正向压降导出的。