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1. 发明授权

US6147390A Solid-state imaging device with film of low hydrogen permeability including openings 失效
标题翻译：具有低透过率的薄膜的固态成像装置包括开口
公开(公告)号：US6147390A
公开(公告)日：2000-11-14
申请号：US52306
申请日：1998-03-31
申请人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
发明人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
IPC分类号： H01L27/14 , H01L27/148 , H01L31/10 , H01L31/18 , H01L32/0216
CPC分类号： H01L31/186 , H01L27/14806 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability. A thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film, the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film to the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.
摘要翻译：半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。中间折射率膜的折射率低于半导体衬底，并且具有低的透氢性。薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜，该薄膜可透过氢气。中等折射率膜用作抗反射膜。抑制通过薄膜和抗反射膜施加到半导体基板的传感器的入射光的反射。中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

2. 发明授权

US06379993B1 Solid-state imaging device with a film of low hydrogen permeability and a method of manufacturing same 失效
标题翻译：具有低透氢性的薄膜的固态成像装置及其制造方法
公开(公告)号：US06379993B1
公开(公告)日：2002-04-30
申请号：US09666505
申请日：2000-09-20
申请人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
发明人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
IPC分类号： H01L21339
CPC分类号： H01L31/186 , H01L27/14806 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.
摘要翻译：半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。中间折射率膜的折射率低于半导体基板，低透氢性薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜该薄膜可透过氢气。中等折射率膜用作抗反射膜。通过半导体衬底的传感器的薄膜和抗反射膜施加的入射光的反射被抑制。中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

3. 发明授权

US6064069A Solid state camera element 失效
标题翻译：固态相机元件
公开(公告)号：US6064069A
公开(公告)日：2000-05-16
申请号：US972565
申请日：1997-11-18
申请人： Takashi Nakano , Nobukazu Teranishi
发明人： Takashi Nakano , Nobukazu Teranishi
IPC分类号： G01J1/58 , H01L27/14 , H01L27/146 , H01L27/148 , H01L31/0232 , H04N5/30
CPC分类号： H01L27/14806 , H01L27/14625 , H01L27/14627 , H01L27/14818
摘要： A solid state camera element having photodiode provided on a matrix and shielding film formed in the layer above the circumference of photodiode, wherein fluorescence film is provided in the layer above any one of photodiodes or in the layer above photodiode, extending from the top surface to the lower layer of shielding film. Interference filter of one or multiple layers is provided in the layer above fluorescence film for transmitting an absorption wavelength and reflecting a luminescence wavelength of the fluorescence film. Also, N well of photodiode is formed deep in the substrate and the peak wavelength of sensitivity is shifted to a longer wavelength side from the normal setting peak value of 550 nm. Therefore, the present invention can enhance the blue sensitivity of the solid state camera element by using fluorescent pigment without causing cross talk with a neighboring photodiode.
摘要翻译：一种固态照相机元件，其具有设置在矩阵上的光电二极管和形成在光电二极管周围的层内的屏蔽膜，其中，荧光膜设置在光电二极管上方的层中或者光电二极管上方的层中，从上表面延伸到下层屏蔽膜。在荧光膜上方设置一层或多层的干涉滤光片，用于透射吸收波长并反射荧光膜的发光波长。此外，光电二极管的N阱形成在衬底的深处，并且灵敏度的峰值波长从550nm的正常设定峰值偏移到较长波长侧。因此，本发明可以通过使用荧光颜料来增强固态照相机元件的蓝色灵敏度，而不会与相邻的光电二极管发生串扰。

4. 发明授权

US06207983B1 Charge transfer device, and driving method and manufacturing method for the same 有权
标题翻译：电荷转移装置及其驱动方法及制造方法相同
公开(公告)号：US06207983B1
公开(公告)日：2001-03-27
申请号：US09488318
申请日：2000-01-20
申请人： Nobuhiko Mutoh , Takashi Nakano
发明人： Nobuhiko Mutoh , Takashi Nakano
IPC分类号： H01L27148
CPC分类号： H01L29/76816 , H01L27/148
摘要： In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.
摘要翻译：在电荷转移装置及其驱动方法中，电子通过绝缘膜注入浮置栅极108中，或者通过绝缘膜从浮置栅极108提取电子，由此浮置栅极的电位会聚到固定电压。

5. 发明授权

US06573750B2 Charge transfer device, and driving method and manufacturing method for the same 失效
标题翻译：电荷转移装置及其驱动方法及制造方法相同
公开(公告)号：US06573750B2
公开(公告)日：2003-06-03
申请号：US09746281
申请日：2000-12-22
申请人： Nobuhiko Mutoh , Takashi Nakano
发明人： Nobuhiko Mutoh , Takashi Nakano
IPC分类号： H01L27148
CPC分类号： H01L29/76816 , H01L27/148
摘要： In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.
摘要翻译：在电荷转移装置及其驱动方法中，电子通过绝缘膜注入浮置栅极108中，或者通过绝缘膜从浮置栅极108提取电子，由此浮置栅极的电位会聚到固定电压。

6. 发明授权

US06191440B1 Charge transfer device with improved charge detection sensitivity 失效
标题翻译：电荷转移装置具有改进的电荷检测灵敏度
公开(公告)号：US06191440B1
公开(公告)日：2001-02-20
申请号：US09108407
申请日：1998-07-01
申请人： Nobuhiko Mutoh , Takashi Nakano
发明人： Nobuhiko Mutoh , Takashi Nakano
IPC分类号： H01L29768
CPC分类号： H01L29/42396 , H01L29/76816
摘要： In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to generate a signal indicative of an output voltage corresponding to the signal charges. A bias gate is provided in the insulating film apart from the floating gate to cover at least a part of the floating gate. A bias applying unit applies a bias voltage to the bias gate in response to the output voltage signal such that an alternate current (AC) component of a voltage of the floating gate is substantially equal to an AC component of a voltage of the bias gate.
摘要翻译：在电荷转移装置中，浮置栅极设置在设置在电荷传输沟道层上的绝缘膜中。缓冲放大器与浮动栅极连接，并检测电荷传输沟道层中的信号电荷，以产生指示对应于信号电荷的输出电压的信号。偏置栅极设置在绝缘膜中，与浮动栅极分开以覆盖至少一部分浮动栅极。偏置施加单元响应于输出电压信号将偏置电压施加到偏置栅极，使得浮置栅极的电压的交流电（AC）分量基本上等于偏置栅极的电压的AC分量。

7. 发明授权

US6023195A On-chip source follower amplifier 失效
标题翻译：片内源极跟随放大器
公开(公告)号：US6023195A
公开(公告)日：2000-02-08
申请号：US144343
申请日：1998-08-31
申请人： Takashi Nakano , Nobuhiko Mutoh
发明人： Takashi Nakano , Nobuhiko Mutoh
IPC分类号： H01L27/146 , H01L23/522 , H01L27/06 , H03F3/50 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374 , H03F3/16
CPC分类号： H01L23/5223 , H01L27/0688 , H03F3/505 , H01L2924/0002
摘要： In an on-chip source follower amplifier having at least one amplification circuit formed on a semiconductor substrate of a first conductivity type, the amplification circuit includes a driver transistor, a peripheral device, a first capacitance, and a high resistance. The driver transistor is formed in a first conductive region of a second conductivity type on the semiconductor substrate. The peripheral device is formed in a second conductive region of the second conductivity type on the semiconductor substrate. The second conductive region is isolated from the first conductive region. The first capacitance couples the first conductive region to a source of the driver transistor. The high resistance is connected between the first conductive region and a DC power supply.
摘要翻译：在具有形成在第一导电类型的半导体衬底上的至少一个放大电路的片上源极跟随放大器中，放大电路包括驱动晶体管，外围器件，第一电容和高电阻。驱动晶体管形成在半导体衬底上的第二导电类型的第一导电区域中。外围器件形成在半导体衬底上的第二导电类型的第二导电区域中。第二导电区域与第一导电区域隔离。第一电容将第一导电区域耦合到驱动晶体管的源极。高电阻连接在第一导电区域和直流电源之间。

8. 发明公开

US20230192429A1 SHEET FEEDING APPARATUS AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20230192429A1
公开(公告)日：2023-06-22
申请号：US18058950
申请日：2022-11-28
申请人： Takashi Nakano
发明人： Takashi Nakano
IPC分类号： B65H7/14 , B65H3/08 , B65H1/14
CPC分类号： B65H7/14 , B65H3/08 , B65H1/14 , B65H2553/40
摘要： A sheet feeding apparatus includes a first feeder, a second feeder, and processing circuitry. The first feeder includes a sheet stacker, an air blower, a suction feeder, and a remaining amount detection sensor. The air blower blows air to float an uppermost sheet. The suction feeder sucks and feeds the sheet. The remaining amount detection sensor detects a remaining amount of sheets stacked. The processing circuitry determines whether the remaining amount of sheets in the first feeder is smaller than a threshold, causes the first feeder to perform a feeding operation of feeding the sheet floated by the air blower to the suction feeder in response to a determination that the remaining amount is equal to or greater than the threshold, and causes the second feeder to feed a sheet instead of the first feeder in response to a determination that the remaining amount is smaller than the threshold.

9. 发明授权

US08952083B2 Fluorocopolymer composition and its production process 有权
标题翻译：含氟聚合物组合物及其制备方法
公开(公告)号：US08952083B2
公开(公告)日：2015-02-10
申请号：US13070572
申请日：2011-03-24
申请人： Takashi Nakano , Tomoyuki Fujita , Yoshitomi Morizawa
发明人： Takashi Nakano , Tomoyuki Fujita , Yoshitomi Morizawa
IPC分类号： C08K5/34 , C08F214/18 , C08F214/26 , C08J3/09 , C08J5/18 , C09D127/12 , C09D127/18 , C08K5/00
CPC分类号： C08F214/18 , C08F214/26 , C08F214/265 , C08J3/093 , C08J5/18 , C08J2327/18 , C08K5/0008 , C09D127/12 , C09D127/18
摘要： To provide a composition comprising a fluorocopolymer such as an ethylene/tetrafluoroethylene copolymer which can be produced at a relatively low temperature, and its production process.A fluorocopolymer composition which comprises a fluorocopolymer such as an ethylene/tetrafluoroethylene copolymer and a fluorinated aromatic compound having a melting point of at most 230° C. and having a fluorine content in the compound of from 5 to 75 mass %, and is in a solution state at a temperature of at most the melting point of the fluorocopolymer, and a process for producing the fluorocopolymer composition, which comprises a step of dissolving the fluorocopolymer in a solvent containing the fluorinated aromatic compound at a temperature of at most the melting point of the fluorocopolymer.
摘要翻译：提供包含可在相对较低温度下生产的含氟共聚物如乙烯/四氟乙烯共聚物的组合物及其制备方法。一种含氟共聚物组合物，其包含含氟共聚物如乙烯/四氟乙烯共聚物和熔点至多为230℃的氟化芳族化合物，化合物中的氟含量为5〜75质量％，为在含氟共聚物的熔点以上的温度下的溶液状态，以及含氟共聚物组合物的制造方法，其特征在于，含有含氟共聚物在含氟化芳香族化合物的溶剂中的溶解温度为含氟共聚物。

10. 发明授权

US08602654B2 Bearing temperature monitoring device and bearing device provided with the monitoring device 有权
标题翻译：轴承温度监控装置和轴承装置配有监控装置
公开(公告)号：US08602654B2
公开(公告)日：2013-12-10
申请号：US12308555
申请日：2007-10-31
申请人： Takaaki Kaikogi , Kazuhiko Yamashita , Takashi Nakano , Yuichiro Waki , Motohisa Uesato , Yutaka Yamada
发明人： Takaaki Kaikogi , Kazuhiko Yamashita , Takashi Nakano , Yuichiro Waki , Motohisa Uesato , Yutaka Yamada
IPC分类号： F16C32/00
CPC分类号： G01K13/08 , F16C17/243
摘要： A bearing temperature monitoring device and bearing device provided with the monitoring device composed so that occurrence of scratch on the rotation shaft supported by the bearing caused by a bearing temperature carrying member integrated in the bearing such that its top end surface faces the rotation shaft, are provided. The bearing device is provided with a bearing temperature detecting device which comprises a bearing temperature carrying member made of material larger in thermal conductivity than the bearing layer and shaped to have a protruded part to be inserted slidably into a through hole in the bearing layer and a base part to be received in a cylindrical space in the back metal, the base part serving to restrict protrusion of the protruded part into the through hole so that the top end surface thereof is level with the sliding surface of the bearing layer, a pushing member attached to the back metal to push the temperature carrying member so that the member move toward the back metal against the pushing force of the pushing member when bearing load exerts on the temperature carrying member, and a temperature sensor for detecting temperature of the temperature carrying member.
摘要翻译：一种轴承温度监测装置和轴承装置，其具有监测装置，其特征在于，由轴承温度承载部件一体地支承在轴承上的旋转轴上产生划痕，使其顶端面朝向旋转轴提供。轴承装置设置有轴承温度检测装置，该装置包括轴承温度承载部件，该轴承温度承载部件由比导热层更大导热性的材料制成，并且成形为具有可滑动地插入轴承层的通孔中的突出部分，基部被容纳在后金属的圆筒形空间中，基部用于限制突出部突出到通孔中，使得其顶端面与轴承层的滑动面平齐，推动构件附着在背金属上以推压承载构件，使得当轴承负载施加在承载温度承载构件上时，构件抵抗推动构件的推力移动，并且用于检测温度承载构件的温度的温度传感器。

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