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1. 发明授权

US07777466B2 Voltage regulator or non-volatile memories implemented with low-voltage transistors 有权
标题翻译：用低压晶体管实现的稳压器或非易失性存储器
公开(公告)号：US07777466B2
公开(公告)日：2010-08-17
申请号：US11844470
申请日：2007-08-24
申请人： Luca Crippa , Giancarlo Ragone , Miriam Sangalli , Giovanni Campardo , Rino Micheloni
发明人： Luca Crippa , Giancarlo Ragone , Miriam Sangalli , Giovanni Campardo , Rino Micheloni
IPC分类号： G05F1/40
CPC分类号： G11C5/147 , G05F1/565 , G11C16/30
摘要： A voltage regulator integrated in a chip of semiconductor material is provided. The regulator has a first input terminal for receiving a first voltage and an output terminal for providing a regulated voltage being obtained from the first voltage, the regulator including: a differential amplifier for receiving a comparison voltage and a feedback signal being a function of the regulated voltage, and for proving a regulation signal according to a comparison between the comparison voltage and the feedback signal, the differential amplifier having a first supply terminal being coupled with a reference terminal for receiving a reference voltage and a second supply terminal, a regulation transistor having a control terminal for receiving the regulation signal, and a conduction first terminal and a conduction second terminal being coupled through loading means between the reference terminal and the first input terminal of the regulator, the second terminal of the regulation transistor being coupled with the output terminal of the regulator, wherein the second supply terminal of the differential amplifier is coupled with a second input terminal of the regulator for receiving a second voltage being lower than the first voltage in absolute value, and wherein the regulator further includes a set of auxiliary transistors being connected in series between the second terminal of the regulation transistor and the output terminal of the regulator, and control means for controlling the auxiliary transistors according to the regulated voltage.
摘要翻译：提供集成在半导体材料芯片中的电压调节器。所述调节器具有用于接收第一电压的第一输入端子和用于提供从所述第一电压获得的调节电压的输出端子，所述调节器包括：用于接收比较电压的差分放大器和作为所述第一电压的函数的反馈信号电压，并且为了根据比较电压和反馈信号之间的比较来证明调节信号，差分放大器具有与用于接收参考电压的参考端子耦合的第一电源端子和第二电源端子，调节晶体管具有用于接收所述调节信号的控制端子，以及通过所述参考端子和所述调节器的所述第一输入端子之间的负载装置耦合的导通第一端子和导通第二端子，所述调节晶体管的所述第二端子与所述输出端子的调节器，其中第二电源差分放大器的nal与调节器的第二输入端耦合，用于接收低于绝对值中的第一电压的第二电压，并且其中调节器还包括一组辅助晶体管，串联连接在第二端调节器的调节晶体管和输出端子，以及用于根据调节电压控制辅助晶体管的控制装置。

2. 发明授权

US07027317B2 Semiconductor memory with embedded DRAM 失效
标题翻译：具有嵌入式DRAM的半导体存储器
公开(公告)号：US07027317B2
公开(公告)日：2006-04-11
申请号：US10720013
申请日：2003-11-20
申请人： Giovanni Campardo , Rino Micheloni
发明人： Giovanni Campardo , Rino Micheloni
IPC分类号： G11C11/24 , G11C14/00
CPC分类号： G11C11/005
摘要： A semiconductor memory comprises a plurality of memory cells, for example Flash memory cells, arranged in a plurality of lines, and a plurality of memory cell access signal lines, each one associated with at least one respective line of memory cells, for accessing the memory cells of the at least one respective line of memory cells; each signal line has a capacitance intrinsically associated therewith. A plurality of volatile memory cells is provided, each having a capacitive storage element. Each volatile memory cell is associated with a respective signal line, and the respective capacitive storage element formed by the capacitance intrinsically associated with the respective signal lines. In particular, the parasitic capacitances associated with bit lines of a matrix of memory cells can be exploited as capacitive storage elements.
摘要翻译：半导体存储器包括多个存储器单元，例如布置在多个行中的闪存单元，以及多个存储单元存取信号线，每个存储单元接入信号线与至少一个相应行的存储单元相关联，用于访问存储器存储单元的至少一个相应行的单元; 每个信号线具有与其固有相关的电容。提供了多个易失性存储单元，每个易失性存储单元具有电容存储元件。每个易失性存储器单元与相应的信号线相关联，并且由与各个信号线固有相关联的电容形成的相应电容存储元件。特别地，与存储器单元的矩阵的位线相关联的寄生电容可以被用作电容性存储元件。

3. 发明授权

US06327184B1 Read circuit for a nonvolatile memory 有权
标题翻译：读取非易失性存储器的电路
公开(公告)号：US06327184B1
公开(公告)日：2001-12-04
申请号：US09621019
申请日：2000-07-21
申请人： Rino Micheloni , Giovanni Campardo , Luca Crippa
发明人： Rino Micheloni , Giovanni Campardo , Luca Crippa
IPC分类号： G11C1606
CPC分类号： G11C16/28
摘要： The read circuit comprises an array branch having an input array node connected, via an array bit line, to an array cell; a reference branch having an input reference node connected, via a reference bit line, to a reference cell; a current-to-voltage converter connected to an output array node of the array branch and to an output reference node of the reference branch to supply on the output array node and the output reference node the respective electric potentials correlated to the currents flowing in the array memory cell and, respectively, in the reference memory cell; and a comparator connected at input to the output array node and output reference node and supplying as output a signal indicative of the contents stored in the array memory cell; and an array decoupling stage arranged between the input array node and the output array node to decouple the electric potentials of the input and output array nodes from one another.
摘要翻译：读取电路包括具有通过阵列位线连接到阵列单元的输入阵列节点的阵列分支; 参考分支，其具有通过参考位线连接到参考单元的输入参考节点; 连接到阵列分支的输出阵列节点和参考分支的输出参考节点的电流 - 电压转换器，以在输出阵列节点和输出参考节点上提供与在阵列存储单元，分别在参考存储单元中; 以及比较器，其输入端连接到所述输出阵列节点和输出参考节点，并且作为输出提供指示存储在所述阵列存储单元中的内容的信号; 以及布置在输入阵列节点和输出阵列节点之间的阵列解耦级，以将输入和输出阵列节点的电位彼此去耦。

4. 发明授权

US06237104B1 Method and a related circuit for adjusting the duration of a synchronization signal ATD for timing the access to a non-volatile memory 有权
标题翻译：方法和相关电路，用于调整同步信号ATD的持续时间，用于定时访问非易失性存储器
公开(公告)号：US06237104B1
公开(公告)日：2001-05-22
申请号：US09222070
申请日：1998-12-29
申请人： Rino Micheloni , Giovanni Campardo , Stefano Commodaro , Guido Lomazzi
发明人： Rino Micheloni , Giovanni Campardo , Stefano Commodaro , Guido Lomazzi
IPC分类号： G06F1200
CPC分类号： G11C8/18 , G11C16/32
摘要： A method and related circuit for adjusting the duration of a pulse synchronization signal for the reading phase of memory cells in electronic memory devices which are integrated on semiconductors are discussed. The pulse synchronization signal is produced by a pulse generator when it detects a logical state commutation on at least one input terminal of a plurality of addressing input terminals of the memory cells. The method produces a logical sum between the signal produced by the generator and a pulse signal having a predetermined duration. The logical sum is used to start up the reading phase.
摘要翻译：讨论了用于调整集成在半导体上的电子存储器件中的存储器单元的读取阶段的脉冲同步信号的持续时间的方法和相关电路。当脉冲同步信号检测到存储器单元的多个寻址输入端的至少一个输入端上的逻辑状态换向时，脉冲同步信号由脉冲发生器产生。该方法产生由发生器产生的信号与具有预定持续时间的脉冲信号之间的逻辑和。逻辑和用于启动读取阶段。

5. 发明授权

US06181602B2 Device and method for reading nonvolatile memory cells 有权
标题翻译：用于读取非易失性存储单元的装置和方法
公开(公告)号：US06181602B2
公开(公告)日：2001-01-30
申请号：US09322460
申请日：1999-05-28
申请人： Giovanni Campardo , Rino Micheloni , Alfonso Maurelli
发明人： Giovanni Campardo , Rino Micheloni , Alfonso Maurelli
IPC分类号： G11C1606
CPC分类号： G11C16/28 , G11C7/06 , G11C7/062
摘要： A method for reading memory cells that includes supplying simultaneously two memory cells, both storing a respective unknown charge condition; generating two electrical quantities, each correlated to a respective charge condition of the respective memory cell; comparing the two electrical quantities with each other; and generating a two-bit signal on the basis of the result of the comparison. A reading circuit includes a two-input comparator having two branches in parallel, each branch being connected to a respective memory cell by a current/voltage converter. Both the two-input comparator and the current/voltage converter comprise low threshold transistors.
摘要翻译：一种用于读取存储单元的方法，包括同时提供两个存储相应未知充电条件的存储器单元; 产生两个电量，每个电量与相应存储器单元的相应充电条件相关; 将两个电量相互比较; 并根据比较结果产生2位信号。读取电路包括并联的两个分支的双输入比较器，每个分支通过电流/电压转换器连接到相应的存储单元。双输入比较器和电流/电压转换器均包括低阈值晶体管。

6. 发明授权

US07184319B2 Method for erasing non-volatile memory cells and corresponding memory device 有权
标题翻译：擦除非易失性存储单元和相应存储器件的方法
公开(公告)号：US07184319B2
公开(公告)日：2007-02-27
申请号：US10675221
申请日：2003-09-30
申请人： Rino Micheloni , Giovanni Campardo
发明人： Rino Micheloni , Giovanni Campardo
IPC分类号： G11C16/16 , G11C16/08 , G11C29/04 , G11C29/24
CPC分类号： G11C29/82 , G11C16/04 , G11C16/16 , G11C29/44 , G11C2029/1208
摘要： The invention relates to a method for erasing non-volatile memory cells, and to a corresponding non-volatile memory device of the programmable and electrically erasable type implementing the method, and comprising a memory cell array organized in a row-and-column layout, and divided in array sectors, including at least one row decode circuit portion being supplied positive and negative voltages. The method is applied whenever the issue of the erase algorithm is negative, and comprises the following steps: forcing an incompletely erased sector into a read condition; scanning the rows of said sector to check for the possible presence of a spurious current indicating a fail state; identifying and electrically isolating the failed row; re-addressing from said failed row to a redundant row provided in the same sector; re-starting the erase algorithm.
摘要翻译：本发明涉及一种用于擦除非易失性存储单元的方法，以及实现该方法的可编程和电可擦除类型的相应非易失性存储器件，并且包括以行和列布局组织的存储单元阵列，并且被划分成阵列扇区，包括至少一个行解码电路部分被提供正和负电压。每当擦除算法的问题为负时，该方法被应用，并且包括以下步骤：强制将未完全擦除的扇区进入读取状态; 扫描所述扇区的行以检查指示故障状态的寄生电流的可能存在; 识别和电隔离失败的行; 从所述故障行重新寻址到在同一扇区中提供的冗余行; 重新启动擦除算法。

7. 发明授权

US07035142B2 Non volatile memory device including a predetermined number of sectors 有权
标题翻译：包括预定数量的扇区的非易失性存储器件
公开(公告)号：US07035142B2
公开(公告)日：2006-04-25
申请号：US10748696
申请日：2003-12-30
申请人： Osama Khouri , Roberto Ravasio , Rino Micheloni , Giovanni Campardo
发明人： Osama Khouri , Roberto Ravasio , Rino Micheloni , Giovanni Campardo
IPC分类号： G11C16/06
CPC分类号： G11C29/76
摘要： The device includes a circuit for sector remapping having a CAM (Content Addressable Memory) unit, associated to and in data communication with a multiplexer unit. The CAM unit detects that a sector is defective, it provides the pre-programmed address of a replacing sector and it activates the multiplexer which performs the replacement. The defective sectors and the corresponding locations of the address map are therefore advantageously positioned to the rear to the addressing area. The addressing area is consequently continuous, thus allowing the information to be easily stored and retrieved.
摘要翻译：该设备包括用于扇区重新映射的电路，其具有与多路复用器单元相关联并且与多路复用器单元进行数据通信的CAM（内容可寻址存储器）单元。 CAM单元检测到扇区有故障，它提供替换扇区的预编程地址，并激活执行替换的多路复用器。因此，有缺陷的扇区和地址图的相应位置有利地位于寻址区的后方。因此，寻址区域是连续的，从而可以容易地存储和检索信息。

8. 发明授权

US06639833B2 Method and circuit for dynamic reading of a memory cell at low supply voltage and with low output dynamics 有权
公开(公告)号：US06639833B2
公开(公告)日：2003-10-28
申请号：US10076023
申请日：2002-02-13
申请人： Giovanni Campardo , Rino Micheloni
发明人： Giovanni Campardo , Rino Micheloni
IPC分类号： G11C1600
CPC分类号： G11C11/56 , G11C7/06 , G11C11/5621 , G11C11/5642 , G11C11/565 , G11C16/26
摘要： The method for reading a memory cell includes supplying the cell with a first charge quantity through a capacitive integration element and reintegrating the first charge quantity through a plurality of second charge quantities supplied alternately and in succession to the capacitive integration element. In a first embodiment, the second charge quantities are initially stored in a plurality of capacitive charge-regeneration elements connected alternately and in succession to the capacitive integration element; the second charge quantities are then shared between the capacitive integration element and the capacitive charge-regeneration elements.

9. 发明授权

US06433583B1 CMOS switch circuit for transferring high voltages, in particular for line decoding in nonvolatile memories, with reduced consumption during switching 有权
标题翻译：用于传输高电压的CMOS开关电路，特别是用于非易失性存储器中的线路解码，具有降低的切换时的消耗
公开(公告)号：US06433583B1
公开(公告)日：2002-08-13
申请号：US09585916
申请日：2000-06-02
申请人： Rino Micheloni , Giovanni Campardo , Atsushi Ohba , Marcello Carrera
发明人： Rino Micheloni , Giovanni Campardo , Atsushi Ohba , Marcello Carrera
IPC分类号： H03K190175
CPC分类号： H03K19/018521 , G11C5/145 , G11C8/10 , G11C11/5621 , G11C16/08 , H03K19/0013 , H03K19/01721
摘要： The switch circuit receives a first supply voltage and a second supply voltage different from each other; a control input receiving a control signal that may be switched between the first supply voltage and ground; a driving inverter stage supplied by the second supply voltage and defining the output of the circuit; a feedback inverter stage supplied by the second supply voltage and including a top transistor and a bottom transistor defining an intermediate node and having respective control terminals. The control terminal of the top transistor is connected to the output node, the control terminal of the bottom transistor is connected to the control input, and the intermediate node is connected to the input of the driving inverter stage. An activation element helps switching of the intermediate node from the second supply voltage to ground; current limiting transistors are arranged in the inverter stages to limit the current flowing during switching and to reduce the consumption of the circuit.
摘要翻译：开关电路接收彼此不同的第一电源电压和第二电源电压; 接收可以在第一电源电压和地之间切换的控制信号的控制输入; 由第二电源电压提供的驱动逆变器级，并定义电路的输出; 由第二电源电压提供的反馈反相器级，并且包括限定中间节点并具有相应控制端的顶部晶体管和底部晶体管。顶部晶体管的控制端子连接到输出节点，底部晶体管的控制端子连接到控制输入，中间节点连接到驱动逆变器级的输入端。激活元件有助于将中间节点从第二电源电压切换到地; 限流晶体管布置在反相器级中以限制在开关期间流动的电流并且减少电路的消耗。

10. 发明授权

US06169423A Method and circuit for regulating the length of an ATD pulse signal 有权
标题翻译：用于调节ATD脉冲信号长度的方法和电路
公开(公告)号：US06169423A
公开(公告)日：2001-01-02
申请号：US09186496
申请日：1998-11-04
申请人： Giovanni Campardo , Rino Micheloni , Matteo Zammattio , Donato Ferrario
发明人： Giovanni Campardo , Rino Micheloni , Matteo Zammattio , Donato Ferrario
IPC分类号： H03K522
CPC分类号： G11C8/18
摘要： The invention relates to a method and a circuit for regulating a pulse synchronization signal (ATD) for the memory cell read phase in semiconductor integrated electronic memory devices. The pulse signal (ATD) is generated upon detection of a change in logic state of at least one of a plurality of address input terminals of the memory cells, so as to also generate an equalization signal (SAEQ) to a sense amplifier. The SAEQ pulse is blocked (STOP) upon the row voltage reaching a predetermined sufficient value to provide reliable reading. Advantageously, the pulse blocking is produced by a logic signal (STOP) activated upon a predetermined voltage value being exceeded during the overboost phase of the addressed memory row.
摘要翻译：本发明涉及一种用于调整半导体集成电子存储器件中存储单元读取相位的脉冲同步信号（ATD）的方法和电路。在检测到存储器单元的多个地址输入端中的至少一个的逻辑状态的变化时产生脉冲信号（ATD），以便还产生到读出放大器的均衡信号（SAEQ）。当行电压达到预定的足够值时，SAEQ脉冲被阻塞（STOP），以提供可靠的读数。有利地，通过在寻址的存储器行的过载阶段期间超过预定电压值而激活的逻辑信号（STOP）产生脉冲阻塞。

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