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1. 发明专利

JP2014177362A Group 13 nitride crystal and method for producing group 13 nitride crystal 有权
标题翻译：第13组氮化物晶体和用于生产13号硝酸盐晶体的方法
公开(公告)号：JP2014177362A
公开(公告)日：2014-09-25
申请号：JP2013051072
申请日：2013-03-13
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： WADA JUNICHI , HAYASHI MASAHIRO , MIYAKE SHINSUKE , MIYOSHI NAOYA , SARAYAMA SHOJI
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B9/10
摘要： PROBLEM TO BE SOLVED: To provide a high quality group 13 nitride crystal.SOLUTION: A group 13 nitride crystal 25 is a hexagonal group 13 nitride crystal containing at least one kind of metal atoms selected from a group consisting of B, Al, Ga, In and Ti and nitrogen atoms comprising: a first region 25A located inner side of a cross section across a c axis; a third region 25C located at outermost side of the cross section; and a second region 25B located between the first region 25A and the third region 25C on the cross section having a crystal properties different from those of the first region 25A and the third region 25C, in which the shape of the boundary of the first region 25A and the second region 25B on the cross section is not hexagonal.
摘要翻译：要解决的问题：提供高质量的氮化物组13。解决方案：氮化硼晶体25是含有选自由B，Al，Ga等组成的组中的至少一种金属原子的六方晶系13氮化物晶体， In和Ti和氮原子包括：位于跨越ac轴的横截面内侧的第一区域25A; 位于截面最外侧的第三区域25C; 以及位于第一区域25A和第三区域25C之间的第二区域25B，其截面具有与第一区域25A和第三区域25C的边界的形状不同的第一区域25A和第三区域25C的晶体性质的晶体性质横截面上的第二区域25B不是六边形。

2. 发明专利

JP2011046610A Manufacturing method 有权
标题翻译：制造方法
公开(公告)号：JP2011046610A
公开(公告)日：2011-03-10
申请号：JP2010271768
申请日：2010-12-06
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： FUSE AKIHIRO , SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： C30B29/38 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth apparatus for stably growing the group three nitride crystal. SOLUTION: A crucible 10 holding a mixed melt 290 of Na metal and Ga metal is disposed in an internal reaction vessel 20. An external reaction vessel 300 covers the periphery of the internal reaction vessel 20. A suppression/introduction plug 60 is fixed in a piping 30 on the lower side of a connection part of the crucible 10 and the internal reaction vessel 20 and holds a metal melt 190 by the surface tension of the metal melt 190 and also supplies a nitrogen gas in the piping 30 into a space 23 via the metal melt 190. A gas cylinder 140 supplies the nitrogen gas to the piping 30 through a pressure regulator 130. A supporting device 50 always brings a seed crystal 5 into contact with the mixed melt 290. A controlling device 370 set the pressure difference between the pressure Pin of the space 23 and the pressure Pout in the external reaction vessel 300 to a value smaller than a prescribed value which determines a crystal growth apparatus 100 to be abnormal. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于稳定生长三组氮化物晶体的晶体生长装置。解决方案：在内部反应容器20中设置保持Na金属和Ga金属的混合熔体290的坩埚10.外部反应容器300覆盖内部反应容器20的周边。抑制/引入塞60是固定在坩埚10的连接部分的下侧的管道30和内部反应容器20中，并通过金属熔体190的表面张力保持金属熔体190，并且将管道30中的氮气供应到空间23通过金属熔体190.气瓶140通过压力调节器130将氮气供应到管道30.支撑装置50总是使晶种5与混合熔体290接触。控制装置370将空间23的压力Pin与外部反应容器300的压力Pout之间的压力差小于使晶体生长装置100变得异常的规定值以下的值。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2007186420A Method and apparatus for growing crystal, group iii nitride crystal, and group iii nitride semiconductor device 有权
标题翻译：用于生长晶体，III族氮化物晶体和III族氮化物半导体器件的方法和装置
公开(公告)号：JP2007186420A
公开(公告)日：2007-07-26
申请号：JP2007074497
申请日：2007-03-22
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , SHIMADA MASAHIKO , YAMANE HISANORI
IPC分类号： C30B29/38 , C30B9/00 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a practical size for manufacturing a high performance light-emitting diode, an LD or the like without complicating a process, using an expensive reactor, and making the crystal size small; and to provide a method and an apparatus capable of growing such a group III nitride crystal. SOLUTION: When the group III nitride crystal is grown in a first reaction vessel 101 by using a mixed melt 102 containing an alkali metal and at least a group III metal and a nitrogen raw material introduced from the outside of the first reaction vessel 101, the vapor of the alkali metal is shut up in the first reaction vessel 101. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有用于制造高性能发光二极管，LD等的实际尺寸的III族氮化物晶体，而不会使工艺复杂化，使用昂贵的反应器，并且使晶体尺寸小 ; 并提供能够生长这种III族氮化物晶体的方法和装置。解决方案：当通过使用含有碱金属和至少III族金属的混合熔体102和从第一反应容器的外部引入的氮原料在第一反应容器101中生长III族氮化物晶体时如图101所示，在第一反应容器101中闭合碱金属的蒸气。（C）2007，JPO＆INPIT

4. 发明专利

JP2007137730A Crystal growth apparatus and crystal production method 有权
标题翻译：晶体生长装置和晶体生产方法
公开(公告)号：JP2007137730A
公开(公告)日：2007-06-07
申请号：JP2005335108
申请日：2005-11-21
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , IWATA HIROKAZU , FUSE AKIHIRO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth apparatus for growing a group III nitride crystal having a large crystal size. SOLUTION: A reaction vessel 10 holds a mixed melt 290 of metal Na and metal Ga, and an external reaction vessel 20 covers the circumference of the vessel 10. Piping 30 is connected to the external reaction vessel 20 at the lower side of the reaction vessel 10. A suppressing/introducing plug 60 is fixed in the piping 30 at the side lower than the connection part of the vessels 10 and 20. A gas cylinder 140 supplies nitrogen gas to the piping 30 through a pressure controller 130. The suppressing/introducing plug 60 and a metal melt 190 prevent the diffusion of metal Na vapor, evaporated from mixed melt 290, into the piping 30, and supply the nitrogen gas in the piping 30 into a space 23 by the pressure difference between the spaces 23 and 31. A supporting device 50 brings a seed crystal 5 into contact with the mixed melt 290 at any time. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种用于生长具有大晶体尺寸的III族氮化物晶体的晶体生长装置。解决方案：反应容器10保持金属Na和金属Ga的混合熔体290，外部反应容器20覆盖容器10的周边。管道30连接到外部反应容器20的下侧反应容器10.抑制/引入塞60在比容器10和20的连接部分低的一侧固定在管道30中。气瓶140通过压力控制器130向管道30供应氮气。抑制/引入插头60和金属熔体190防止从混合熔体290蒸发的金属Na蒸气的扩散进入管道30，并且通过空间23之间的压力差将管道30中的氮气供应到空间23中支撑装置50随时使晶种5与混合熔体290接触。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006169024A Group iii nitride crystal, growth method, and device and module using the crystal 有权
标题翻译：第III组氮化物晶体，生长方法以及使用晶体的器件和模块
公开(公告)号：JP2006169024A
公开(公告)日：2006-06-29
申请号：JP2004361644
申请日：2004-12-14
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： C30B29/38 , C30B11/06 , H01L21/208 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a high quality group III nitride self-standing substrate which has excellent heat-dissipating characteristics and high thermal conductivity and can be obtained at a low cost by a flux method; a group III nitride semiconductor device; a semiconductor module; and a method for producing a group III nitride crystal.
SOLUTION: In the method for growing the group III nitride crystal, comprising growing the group III nitride crystal from a mixed melt containing a flux and at least a group III metal and nitrogen by reacting the group III metal and nitrogen, at least one melt of the group III metal and the flux is filled in the interface for growing the group III nitride crystal.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有优异的散热特性和高导热性的高品质III族氮化物自立式基板，可以通过助焊剂方法以低成本获得; III族氮化物半导体器件; 半导体模块; 以及III族氮化物晶体的制造方法。解决方案：在用于生长III族氮化物晶体的方法中，包括通过使III族金属和氮反应，从含有助熔剂和至少III族金属和氮的混合熔体中生长出III族氮化物晶体，至少 III族金属的熔体和助熔剂填充在用于生长III族氮化物晶体的界面中。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006138647A Thermocouple, reaction system, and crystal growth device 有权
标题翻译：热电偶，反应系统和晶体生长装置
公开(公告)号：JP2006138647A
公开(公告)日：2006-06-01
申请号：JP2004326138
申请日：2004-11-10
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , IWATA HIROKAZU , SHOJI HIROYOSHI
IPC分类号： G01K1/08 , C30B29/38 , C30B35/00
摘要： PROBLEM TO BE SOLVED: To provide a thermocouple, a reaction system, and a crystal growth device, less deteriorated even when they are used in an environment where substances exist containing alkaline metals and at least nitrogen, like a flux method, etc.
SOLUTION: This crystal growth device is characterized in that a sheath 102 is provided outside a thermocouple core 101, the sheath 102 preventing the thermocouple core 101 from being nitrided even when it is used in an environment where substances exist containing alkaline metals and at least nitrogen.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供热电偶，反应系统和晶体生长装置，即使当它们在含有碱金属和至少氮的物质的环境中使用时，如通量法等也不会劣化解决方案：该晶体生长装置的特征在于，外壳102设置在热电偶芯101外部，鞘102防止热电偶芯101被氮化，即使其在存在含碱性金属的物质的环境中使用和至少氮。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005263572A Group iii nitride crystal growth method and crystal growth apparatus 审中-公开
标题翻译：第III组氮化物晶体生长方法和晶体生长装置
公开(公告)号：JP2005263572A
公开(公告)日：2005-09-29
申请号：JP2004079808
申请日：2004-03-19
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SHOJI HIROYOSHI , SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： C30B9/10 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal growth method by which an alkali metal vapor from a mixed melt is prevented from leaking out of a melt holder, and the change in mixing ratio between an alkali metal and a group III metal and the lowering of the liquid level of the melt can be reduced.
SOLUTION: A mixed melt 3 containing an alkali metal and a group III nitride is held in a melt holder 2, and the clearance of the melt holder 2 (the clearance between a container body 2a and a lid 2b) 2 is divided with a molten metal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供III族氮化物晶体生长方法，其中防止来自混合熔体的碱金属蒸气从熔体保持器中泄漏出来，并且碱金属和基团之间的混合比的变化 III金属和熔体液面的降低可以降低。解决方案：将含有碱金属和III族氮化物的混合熔体3保持在熔体保持器2中，并且熔体保持器2的间隙（容器主体2a和盖2b之间的间隙）2被分开与熔融金属。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005263511A Crystal growth method of group iii nitride, group iii nitride crystal and semiconductor device 审中-公开
标题翻译： III类氮化物，III类氮化物晶体和半导体器件的晶体生长方法
公开(公告)号：JP2005263511A
公开(公告)日：2005-09-29
申请号：JP2004074210
申请日：2004-03-16
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： IWATA HIROKAZU , SARAYAMA SHOJI
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth method of group III nitride by which the dissolving rate of nitrogen in a melt is increased to increase the growth rate and a high-quality group III nitride crystal can be produced.
SOLUTION: In the crystal growth method of a group III nitride to grow a group III nitride crystal from a melt in which at least alkali metal, group III metal and nitrogen are dissolved, a compound containing alkali metal, group III metal and nitrogen is dissolved in a melt 22 containing alkali metal to grow a crystal of group III nitride 23.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供III族氮化物的晶体生长方法，通过该方法，增加熔体中氮的溶解速率以增加生长速率，并且可以生产出高质量的III族氮化物晶体。解决方案：在III族氮化物的晶体生长方法中，从溶解有至少碱金属，III族金属和氮的熔体中生长III族氮化物晶体，可以使用含有碱金属，III族金属和氮气溶解在含有碱金属的熔体22中以生长III族氮化物的晶体23.权利要求：（C）2005，JPO＆NCIPI

9. 发明专利

JP2005247593A Crystal growth method of group iii nitride, group iii nitride crystal and semiconductor device 审中-公开
标题翻译： III类氮化物，III类氮化物晶体和半导体器件的晶体生长方法
公开(公告)号：JP2005247593A
公开(公告)日：2005-09-15
申请号：JP2004055930
申请日：2004-03-01
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： C30B29/38 , C30B11/04 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To produce a high-quality group-III nitride crystal by increasing the solubility of nitrogen in a melt and increasing the growth rate even when the nitrogen source material is supplied by dissolving from a gas phase into the melt.
SOLUTION: The crystal growth method of group III nitride is carried out by a flux method in which a mixture melt 103 is prepared from a flux and a substance containing at least a group III metal and a crystal of group III nitride comprising the group III metal and nitrogen is grown from the mixture melt 103 and a substance containing at least nitrogen, wherein the group III nitride crystal is grown on a substrate 110 by adding Li by the flux method.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过增加氮在熔体中的溶解度并且即使当氮源材料通过从气相中溶解到熔体中而提高生长速率来生产高质量的III族氮化物晶体。解决方案：III族氮化物的晶体生长方法通过助熔剂法进行，其中混合物熔体103由熔剂和至少含有III族金属的物质和包含III族金属的III族氮化物的晶体制备 III族金属和氮从混合物熔体103和至少含有氮的物质生长，其中III族氮化物晶体通过通过助熔剂法加入Li而在衬底110上生长。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005219961A Crystal growth method of group iii nitride, and group iii nitride crystal 有权
标题翻译： III类氮化物和III类氮化物晶体的晶体生长方法
公开(公告)号：JP2005219961A
公开(公告)日：2005-08-18
申请号：JP2004028789
申请日：2004-02-05
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： C30B19/04 , C30B29/38 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth method of a group III nitride capable of realizing an inexpensive high-quality group III nitride self-standing substrate.
SOLUTION: The crystal growth method uses a flux method which comprises forming a mixed melt 103 composed of an alkali metal and a substance containing at least a group III metal in a reaction vessel and causing a crystal of a group III nitride composed of the group III metal and nitrogen to grow from the mixed melt 103 and a substance containing at least nitrogen. The crystal growth method is characterized as follows: by causing the group III nitride to grow on a substrate made of a material composed of the group III nitride alone, growth pits are formed in a region including crystal defects; and then, on the region including the growth pits, the crystal of the group III nitride is caused to grow.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现廉价的高质量III族氮化物自立式衬底的III族氮化物的晶体生长方法。解决方案：晶体生长方法使用助熔剂法，其包括在反应容器中形成由碱金属和至少含有III族金属的物质组成的混合熔体103，并使由III III族金属和氮从混合熔体103中生长并含有至少含有氮的物质。晶体生长方法的特征如下：通过使III族氮化物在由仅由III族氮化物组成的材料制成的衬底上生长，在包括晶体缺陷的区域中形成生长凹坑; 然后，在包括生长坑的区域上，使III族氮化物的晶体生长。版权所有（C）2005，JPO＆NCIPI

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