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1. 发明授权

US06368484B1 Selective plating process 失效
标题翻译：选择电镀工艺
公开(公告)号：US06368484B1
公开(公告)日：2002-04-09
申请号：US09567468
申请日：2000-05-09
申请人： Richard P. Volant , Peter S. Locke , Kevin S. Petrarca , David M. Rockwell , Seshadri Subbanna
发明人： Richard P. Volant , Peter S. Locke , Kevin S. Petrarca , David M. Rockwell , Seshadri Subbanna
IPC分类号： C25D548
CPC分类号： H01L21/76865 , C25D5/02 , C25D5/48 , H01L21/76843 , H01L21/76874 , H01L21/76879
摘要： A method is described for electroplating a metal structure in a feature formed in a substrate. A seed layer of the metal is deposited on the top surface and on the bottom and sidewalls of the feature. The seed layer is then selectively removed from the top surface, so that only a portion of the seed layer remains in the feature on at least the bottom thereof. The metal is then electroplated using this portion of the seed layer, so that the metal fills the feature. The removal of the seed layer from the top surface causes no electroplating to occur on the top surface.
摘要翻译：描述了一种用于在形成在基底中的特征中电镀金属结构的方法。金属的种子层沉积在特征的顶表面和底部以及侧壁上。然后，从顶表面选择性地去除晶种层，使得至少其底部仅有部分种子层保留在特征中。然后使用种子层的这一部分电镀金属，使得金属填充该特征。从上表面去除种子层不会在顶表面上发生电镀。

2. 发明授权

US06344125B1 Pattern-sensitive electrolytic metal plating 失效
标题翻译：图案感应电解金属电镀
公开(公告)号：US06344125B1
公开(公告)日：2002-02-05
申请号：US09544053
申请日：2000-04-06
申请人： Peter S. Locke , Kevin S. Petrarca , Seshadri Subbanna , Richard P. Volant
发明人： Peter S. Locke , Kevin S. Petrarca , Seshadri Subbanna , Richard P. Volant
IPC分类号： C25D502
CPC分类号： C25D7/123 , H01L21/2885 , H01L21/32051
摘要： A process for the electrolytic deposition of a metal, preferably copper or an alloy of copper, directly onto a barrier layer coated on a dielectric layer. The process is advantageous because it electrolytically deposits metal in a pattern that is either the duplicate of a first conductive pattern under the dielectric or the inverse image of the first conductive pattern, depending on the first conductive pattern shape. Thus, metal is deposited on the barrier layer duplicating a first conductive pattern under the dielectric layer when the first pattern is a serpentine pattern and the metal deposits in the spaces between the conductive lines of a first conductive pattern of a discrete passive element such as a spiral.
摘要翻译：一种用于将金属，优选铜或铜合金电解沉积到涂覆在电介质层上的阻挡层上的方法。该方法是有利的，因为它取决于第一导电图案形状，电解沉积在第一导电图案的电介质下的第一导电图案的副本或第一导电图案的逆图像的图案中的金属。因此，当第一图案是蛇形图案时，金属沉积在阻挡层上，复制第一导电图案下方的第一导电图案，并且金属沉积在离散无源元件的第一导电图案的导线之间的空间中，例如螺旋。

3. 发明授权

US06798029B2 Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
标题翻译：在CMOS兼容基板上制造微机电开关的方法
公开(公告)号：US06798029B2
公开(公告)日：2004-09-28
申请号：US10434999
申请日：2003-05-09
申请人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
发明人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
IPC分类号： H01L2982
CPC分类号： H01H59/0009 , H01H2059/0018 , H01H2059/0072
摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
摘要翻译：描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。然后用牺牲脱模材料填充空腔。然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

4. 发明授权

US07053460B2 Multi-level RF passive device 有权
公开(公告)号：US07053460B2
公开(公告)日：2006-05-30
申请号：US10026146
申请日：2001-12-21
申请人： Richard P. Volant , Seshadri Subbanna , Robert A. Groves , John C. Malinowski , Kenneth J. Stein , Kevin S. Petrarca
发明人： Richard P. Volant , Seshadri Subbanna , Robert A. Groves , John C. Malinowski , Kenneth J. Stein , Kevin S. Petrarca
IPC分类号： H01L29/00 , H01L23/48
CPC分类号： H01L23/66 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A passive electrical device includes a first electrical conductor, a second electrical conductor disposed over the first conductor; and a third electrical conductor connecting the first conductor to the second conductor. The said first, second and third conductors are disposed on a semiconductor substrate. The sheet resistivity of the first conductor is approximately equal to the sheet resistivity of the second conductor.

5. 发明授权

US06635506B2 Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
标题翻译：在CMOS兼容基板上制造微机电开关的方法
公开(公告)号：US06635506B2
公开(公告)日：2003-10-21
申请号：US10014660
申请日：2001-11-07
申请人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
发明人： Richard P. Volant , John C. Bisson , Donna R. Cote , Timothy J. Dalton , Robert A. Groves , Kevin S. Petrarca , Kenneth J. Stein , Seshadri Subbanna
IPC分类号： H01L2100
CPC分类号： B81C1/00246 , B81B2201/016 , B81B2201/018 , B81B2203/0127 , B81B2207/07 , B81C1/00611 , B81C2201/0122 , B81C2203/0735 , H01G5/40 , H01H59/0009
摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
摘要翻译：描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。然后用牺牲脱模材料填充空腔。然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

6. 发明授权

US06701779B2 Perpendicular torsion micro-electromechanical switch 失效
标题翻译：垂直扭转微机电开关
公开(公告)号：US06701779B2
公开(公告)日：2004-03-09
申请号：US10104972
申请日：2002-03-21
申请人： Richard P. Volant , Robert A. Groves , Kevin S. Petrarca , David M. Rockwell , Kenneth J. Stein
发明人： Richard P. Volant , Robert A. Groves , Kevin S. Petrarca , David M. Rockwell , Kenneth J. Stein
IPC分类号： G01P1500
CPC分类号： H01H59/0009 , B81B3/0021 , B81B2201/018 , B81B2203/058 , B81B2207/015 , B81C1/00214 , H01H2001/0068 , H01H2059/0054
摘要： A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.
摘要翻译：描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。制造扭转MEM开关的方法与CMOS制造工艺完全兼容。

7. 发明授权

US06933186B2 Method for BEOL resistor tolerance improvement using anodic oxidation 有权
标题翻译：使用阳极氧化的BEOL电阻公差改进方法
公开(公告)号：US06933186B2
公开(公告)日：2005-08-23
申请号：US09961009
申请日：2001-09-21
申请人： John M. Cotte , Kenneth J. Stein , Seshadri Subbanna , Richard P. Volant
发明人： John M. Cotte , Kenneth J. Stein , Seshadri Subbanna , Richard P. Volant
IPC分类号： H01C17/26 , H01L21/02 , H01L21/337
CPC分类号： H01L28/24 , H01C17/262
摘要： A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region. The anodized resistor thus formed has a sheet resistivity that is higher than that of the base resistor film.
摘要翻译：提供了一种改进后端（BEOL）薄膜电阻的公差的方法。具体地，本发明的方法包括能够将基极电阻膜的一部分转变为阳极氧化区域的阳极氧化步骤。如此形成的阳极氧化电阻的电阻率比基极电阻膜高。

8. 发明授权

US06414371B1 Process and structure for 50+ gigahertz transistor 有权
标题翻译： 50 +千兆赫晶体管的工艺和结构
公开(公告)号：US06414371B1
公开(公告)日：2002-07-02
申请号：US09580130
申请日：2000-05-30
申请人： Gregory G. Freeman , Robert A. Groves , Jeffrey Johnson , Seshadri Subbanna , Richard P. Volant
发明人： Gregory G. Freeman , Robert A. Groves , Jeffrey Johnson , Seshadri Subbanna , Richard P. Volant
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L21/8222 , H01L27/0823
摘要： High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and emitter regions on a substrate and attachment of a second substrate, the original substrate is wholly or partially removed, the inactive collector area is removed or rendered semi-insulating and wiring and contacts are made from the original back side of the chip. Dielectric material used in the manufacturing process can be removed to further reduce capacitance. The high frequency transistors can be bonded to CMOS chips or wafers to form BICMOS chips.
摘要翻译：提高了晶体管设计的高频性能，并通过不同技术的工艺组合来去除和减少寄生电容源，从而提高了制造成品率。在衬底上形成集电极，基极和发射极区域并附接第二衬底后，原始衬底被全部或部分去除，非活性集电极区域被去除或呈半绝缘，并且布线和接触由原始背面制成的芯片。可以去除在制造过程中使用的介电材料，以进一步降低电容。高频晶体管可以结合到CMOS芯片或晶圆上以形成BICMOS芯片。

9. 发明授权

US06661069B1 Micro-electromechanical varactor with enhanced tuning range 有权
标题翻译：具有增强调谐范围的微机电变容二极管
公开(公告)号：US06661069B1
公开(公告)日：2003-12-09
申请号：US10278211
申请日：2002-10-22
申请人： Anil K. Chinthakindi , Robert A. Groves , Kenneth J. Stein , Seshadri Subbanna , Richard P. Volant
发明人： Anil K. Chinthakindi , Robert A. Groves , Kenneth J. Stein , Seshadri Subbanna , Richard P. Volant
IPC分类号： H01L2986
CPC分类号： H01G5/18 , B81B2201/01 , H01G5/011 , Y10S257/924
摘要： A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the “chip side” while the fixed bottom electrode is fabricated on a separated substrate “carrier side”. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and “flipped over”, aligned and joined to the “carrier” substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
摘要翻译：描述了三维微机电（MEM）变容二极管，其中可移动光束和固定电极分别制造在彼此耦合的分开的基板上。具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。由于所涉及的驱动力恒定，可以获得大的电容调谐范围。该装置的三维方面具有较大的表面积。当提供大的纵横比特征时，可以使用较低的致动电压。在制造时，MEMS器件被完全封装，不需要额外的器件封装。此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

10. 发明授权

US06375859B1 Process for resist clean up of metal structures on polyimide 失效
标题翻译：聚酰亚胺金属结构抗蚀剂清理工艺
公开(公告)号：US06375859B1
公开(公告)日：2002-04-23
申请号：US09244935
申请日：1999-02-04
申请人： Richard P. Volant , Joseph T. Kocis , Waldemar W. Kocon , Seshadri Subbanna
发明人： Richard P. Volant , Joseph T. Kocis , Waldemar W. Kocon , Seshadri Subbanna
IPC分类号： B44C122
CPC分类号： H01L21/02071 , G03F7/422 , G03F7/427 , H01L21/31133 , H01L21/31138
摘要： A process for removing a resist material containing a chlorine residue from an organic substrate. The process first removes the chlorine residue from the resist material by exposing the resist material to an abbreviated plasma which also removes a portion of the resist material. The remainder of the resist material is removed by exposing the resist material to a solvent which does not affect the organic substrate.
摘要翻译：从有机基板除去含有残留氯的抗蚀剂材料的方法。该方法首先通过将抗蚀剂材料暴露于也去除抗蚀剂材料的一部分的缩写等离子体而从抗蚀剂材料中除去氯残余物。通过将抗蚀剂材料暴露于不影响有机基底的溶剂，除去抗蚀剂材料的其余部分。

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