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1. 发明授权

US06762667B2 Micro electromechanical switch having self-aligned spacers 失效
标题翻译：具有自对准间隔物的微机电开关
公开(公告)号：US06762667B2
公开(公告)日：2004-07-13
申请号：US10465451
申请日：2003-06-19
申请人： Richard P. Volant , David Angell , Donald F. Canaperi , Joseph T. Kocis , Kevin S. Petrarca , Kenneth J. Stein , William C. Wille
发明人： Richard P. Volant , David Angell , Donald F. Canaperi , Joseph T. Kocis , Kevin S. Petrarca , Kenneth J. Stein , William C. Wille
IPC分类号： H01H3752
CPC分类号： B81B3/001 , B81B2201/014 , H01H59/0009 , H01H2059/0072
摘要： A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.
摘要翻译：描述了一种制造和具有自对准间隔物或凸块的微机电开关（MEMS）装置的结构的方法。间隔件被设计成具有最佳尺寸并且被定位成使得它们用作开关的制动机构以最小化由静摩擦引起的问题。使用通常用于制造CMOS器件的标准半导体技术制造间隔物。制造这些间隔物的本方法不需要附加的沉积，不需要额外的光刻步骤，也不需要额外的蚀刻。

2. 发明授权

US06621392B1 Micro electromechanical switch having self-aligned spacers 有权
公开(公告)号：US06621392B1
公开(公告)日：2003-09-16
申请号：US10132743
申请日：2002-04-25
申请人： Richard P. Volant , David Angell , Donald F. Canaperi , Joseph T. Kocis , Kevin S. Petrarca , Kenneth J. Stein , William C. Wille
发明人： Richard P. Volant , David Angell , Donald F. Canaperi , Joseph T. Kocis , Kevin S. Petrarca , Kenneth J. Stein , William C. Wille
IPC分类号： H01H5122
CPC分类号： B81B3/001 , B81B2201/014 , H01H59/0009 , H01H2059/0072
摘要： A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.

3. 发明授权

US06780695B1 BiCMOS integration scheme with raised extrinsic base 有权
标题翻译： BiCMOS整合方案具有突出的外在基础
公开(公告)号：US06780695B1
公开(公告)日：2004-08-24
申请号：US10249563
申请日：2003-04-18
申请人： Huajie Chen , Seshadri Subbanna , Basanth Jagannathan , Gregory G. Freeman , David C. Ahlgren , David Angell , Kathryn T. Schonenberg , Kenneth J. Stein , Fen F. Jamin
发明人： Huajie Chen , Seshadri Subbanna , Basanth Jagannathan , Gregory G. Freeman , David C. Ahlgren , David Angell , Kathryn T. Schonenberg , Kenneth J. Stein , Fen F. Jamin
IPC分类号： H01L218238
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A method of forming a BiCMOS integrated circuit having a raised extrinsic base is provided. The method includes first forming a polysilicon layer atop a surface of a gate dielectric which is located atop a substrate having device areas for forming at least one bipolar transistor and device areas for forming at least one complementary metal oxide semiconductor (CMOS) transistor. The polysilicon layer is then patterned to provide a sacrificial polysilicon layer over the device areas for forming the at least one bipolar transistor and its surrounding areas, while simultaneously providing at least one gate conductor in the device areas for forming at least one CMOS transistor. At least one pair of spacers are then formed about each of the at least one gate conductor and then a portion of the sacrificial polysilicon layer over the bipolar device areas are selectively removed to provide at least one opening in the bipolar device area. At least one bipolar transistor having a raised extrinsic base is then formed in the at least one opening.
摘要翻译：提供一种形成具有凸起的外在基极的BiCMOS集成电路的方法。该方法包括首先在位于具有用于形成至少一个双极晶体管的器件区域的衬底的顶部的栅极电介质的表面上方形成多晶硅层，以及用于形成至少一个互补金属氧化物半导体（CMOS）晶体管的器件区域）。然后将多晶硅层图案化以在器件区域上提供用于形成至少一个双极晶体管及其周围区域的牺牲多晶硅层，同时在用于形成至少一个CMOS晶体管的器件区域中提供至少一个栅极导体。然后围绕至少一个栅极导体的每一个形成至少一对间隔物，然后选择性地去除双极器件区域上的牺牲多晶硅层的一部分以在双极器件区域中提供至少一个开口。然后在至少一个开口中形成至少一个具有凸起的非本征基极的双极晶体管。

4. 发明授权

US06268226B1 Reactive ion etch loading measurement technique 失效
标题翻译：反应离子蚀刻加载测量技术
公开(公告)号：US06268226B1
公开(公告)日：2001-07-31
申请号：US09345647
申请日：1999-06-30
申请人： David Angell , Stuart M. Burns , Waldemar W. Kocon , Michael L. Passow
发明人： David Angell , Stuart M. Burns , Waldemar W. Kocon , Michael L. Passow
IPC分类号： H01L2100
CPC分类号： H01L21/3065 , H01L22/12 , H01L22/20
摘要： A process for estimating a critical dimension of a trench formed by etching a substrate. First, a regression model is constructed for estimating the critical dimension, in which principal component loadings and principal component scores are also calculated. Next, a substrate is etched and spectral data of the etching are collected. A new principal component score is then calculated using the spectral data and the principal component loadings. Finally, the critical dimension of the trench is estimated by applying the new principal component score to the regression model.
摘要翻译：用于估计通过蚀刻衬底形成的沟槽的临界尺寸的方法。首先，构建了一个回归模型，用于估计临界尺寸，其中还计算主成分负荷和主成分分数。接下来，蚀刻基板并收集蚀刻的光谱数据。然后使用光谱数据和主要分量负载来计算新的主分量分数。最后，通过将新的主成分分数应用于回归模型来估计沟槽的关键尺度。

5. 发明授权

US5288367A End-point detection 失效
标题翻译：终点检测
公开(公告)号：US5288367A
公开(公告)日：1994-02-22
申请号：US11630
申请日：1993-02-01
申请人： David Angell , Carl J. Radens
发明人： David Angell , Carl J. Radens
IPC分类号： G01N21/67 , H01J37/32 , G01N21/00
CPC分类号： H01J37/32935 , G01N21/67 , H01J37/32972
摘要： A wavelength of light is monitored for end-point detection during etching. Spectral data is collected during etching which characterizes variation of light emitted by discharge produced during etching. At least one principal component of the data is calculated. Each principal component has variables, each variable has a weight, and each variable corresponds to a wavelength of the light emitted by the discharge. By examining or analyzing the weights, it is then determined which variable of the principal component varies during etching such that end-point of the etch can be detected by monitoring the wavelength corresponding to the variable.
摘要翻译：在蚀刻期间监视光的波长以进行端点检测。在蚀刻期间收集光谱数据，其表征在蚀刻期间产生的放电发射的光的变化。计算数据的至少一个主成分。每个主成分都有变量，每个变量都有一个权重，每个变量对应于放电发出的光的波长。通过检查或分析权重，然后确定主要成分的哪个变量在蚀刻期间变化，使得可以通过监测对应于变量的波长来检测蚀刻的终点。

6. 发明授权

US06864578B2 Internally reinforced bond pads 有权
公开(公告)号：US06864578B2
公开(公告)日：2005-03-08
申请号：US10249381
申请日：2003-04-03
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
IPC分类号： H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

7. 发明申请

US20100063610A1 METHOD OF PROCESS MODULES PERFORMANCE MATCHING 审中-公开
标题翻译：过程模块性能匹配方法
公开(公告)号：US20100063610A1
公开(公告)日：2010-03-11
申请号：US12206220
申请日：2008-09-08
申请人： David Angell , Bruce Raymond Clemens , Michael W. Mock , Gary R. Moore , Kathy Shackett , Nancy Tovey , Justin Wai-chow Wong
发明人： David Angell , Bruce Raymond Clemens , Michael W. Mock , Gary R. Moore , Kathy Shackett , Nancy Tovey , Justin Wai-chow Wong
IPC分类号： G06F19/00 , G06F15/00
CPC分类号： G05B23/024
摘要： A method and system employing said method for analyzing process module performance in semiconductor manufacturing. The method and system include process modules as part of a process tool. A process initiated in the process module includes steps. Each step includes specified performance parameters. A detection device detects at least one predetermined measurement in the process module. A program and processor generate data about the process module and steps and generates data about the steps and the process module. The program provides statistical analysis of the steps and the environment of the process module using the generated data and the performance parameters. The program determines variations between the process step performance parameters and the generated data about the process steps.
摘要翻译：一种采用该方法分析半导体制造过程模块性能的方法和系统。该方法和系统包括作为过程工具的一部分的过程模块。在过程模块中启动的过程包括步骤。每个步骤都包括指定的性能参数。检测装置检测处理模块中的至少一个预定测量值。程序和处理器生成有关过程模块的数据，并生成有关步骤和过程模块的步骤并生成数据。该程序使用生成的数据和性能参数提供对过程模块的步骤和环境的统计分析。该程序确定过程步骤性能参数与生成的关于过程步骤的数据之间的变化。

8. 发明授权

US07273804B2 Internally reinforced bond pads 失效
标题翻译：内部加固焊接垫
公开(公告)号：US07273804B2
公开(公告)日：2007-09-25
申请号：US11030496
申请日：2005-01-06
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
IPC分类号： H01L21/44 , H01L21/4763 , H01L31/00 , H01L23/48
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
摘要翻译：公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。非平面电介质结构基本上在金属接合层中再现，从而形成非平面金属结构。围绕非平面金属结构的每一个是介电材料环，其在接合焊盘探测期间提供硬停止，以限制在探测期间可以去除的接合焊盘的量。

9. 发明授权

US06777302B1 Nitride pedestal for raised extrinsic base HBT process 有权
标题翻译：用于提高的外在基底HBT工艺的氮化物基座
公开(公告)号：US06777302B1
公开(公告)日：2004-08-17
申请号：US10250100
申请日：2003-06-04
申请人： Huajie Chen , David Angell , Seshadri Subbanna
发明人： Huajie Chen , David Angell , Seshadri Subbanna
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/0817
摘要： A method of fabricating a high-performance, raised extrinsic base HBT having a narrow emitter width is provided. In accordance with the method, a patterned nitride pedestal region and inner spacers are employed to reduce the width of an emitter opening. The reduced width is achieved without the need of using advanced lithographic tools and/or advanced photomasks.
摘要翻译：提供了一种制造具有窄发射极宽度的高性能，凸起的非本征基极HBT的方法。根据该方法，使用图案化的氮化物基座区域和内部间隔件来减小发射器开口的宽度。实现了减小的宽度，而不需要使用先进的光刻工具和/或高级光掩模。

10. 发明申请

US20050121803A1 Internally reinforced bond pads 失效
标题翻译：内部加固焊接垫
公开(公告)号：US20050121803A1
公开(公告)日：2005-06-09
申请号：US11030496
申请日：2005-01-06
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
IPC分类号： H01L23/485 , H01L21/44 , H01L23/48 , H01L29/76 , H01L31/062
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
摘要翻译：公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。非平面电介质结构基本上在金属接合层中再现，从而形成非平面金属结构。围绕非平面金属结构的每一个是介电材料环，其在接合焊盘探测期间提供硬停止，以限制在探测期间可以去除的接合焊盘的量。

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