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1. 发明授权

US06626189B2 Method of processing substrates using pressurized mist generation 失效
标题翻译：使用加压雾生成处理衬底的方法
公开(公告)号：US06626189B2
公开(公告)日：2003-09-30
申请号：US10304583
申请日：2002-11-25
申请人： Ismail Kashkoush , Richard Novak , Dennis Nemeth , Gim-Syang Chen
发明人： Ismail Kashkoush , Richard Novak , Dennis Nemeth , Gim-Syang Chen
IPC分类号： B08B300
CPC分类号： H01L21/67051 , B08B3/02 , B08B7/00 , B08B2203/005 , Y10S134/902
摘要： A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.
摘要翻译：一种从半导体晶片剥离光致抗蚀剂的方法。一方面，本发明是用于处理集成电路的方法，包括：将具有边缘的至少一个晶片放置在具有盖的处理槽中; 关闭盖子用处理液将处理罐填充到晶片边缘以下的预定水平; 将压力下的处理气体供应到处理罐的剩余容积; 并向工艺液体施加声能，以便在处理罐中形成工艺液体雾。优选地，处理液体是臭氧化的去离子水，并且处理气体是臭氧。

2. 发明授权

US06818563B2 Process and apparatus for removal of photoresist from semiconductor wafers using spray nozzles 失效
标题翻译：使用喷嘴从半导体晶片去除光致抗蚀剂的工艺和设备
公开(公告)号：US06818563B2
公开(公告)日：2004-11-16
申请号：US10366054
申请日：2003-02-13
申请人： Richard Novak , Ismail Kashkoush , Gim-Syang Chen , Dennis Nemeth
发明人： Richard Novak , Ismail Kashkoush , Gim-Syang Chen , Dennis Nemeth
IPC分类号： H01L21302
CPC分类号： G03F7/423 , Y10T117/10
摘要： A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.
摘要翻译：公开了一种从半导体晶片去除光致抗蚀剂的方法，其中至少一个具有至少一层光致抗蚀剂的半导体晶片位于处理槽中; 向所述处理罐提供臭氧气体; 并且所述半导体晶片经由至少一个喷嘴用臭氧和去离子水的混合物喷射。该过程中的温度保持在或高于环境温度。供给到罐的臭氧气体优选地处于所述处理罐内的压力下，并且喷嘴优选以5至10个大气压的喷嘴压力喷射去离子水和臭氧的混合物。在另一个实施例中，本发明是用于执行该过程的装置。

3. 发明授权

US06532974B2 Process tank with pressurized mist generation 失效
标题翻译：加压罐加压雾生成
公开(公告)号：US06532974B2
公开(公告)日：2003-03-18
申请号：US10117768
申请日：2002-04-05
申请人： Ismail Kashkoush , Richard Novak , Dennis Nemeth , Gim-Syang Chen
发明人： Ismail Kashkoush , Richard Novak , Dennis Nemeth , Gim-Syang Chen
IPC分类号： B08B300
CPC分类号： H01L21/67051 , B08B3/02 , B08B7/00 , B08B2203/005 , Y10S134/902
摘要： A process tank for stripping photoresist from semiconductor wafers. In one aspect the invention is a process tank having a process chamber, means to support at least one wafer in the processing chamber, means for supplying a process liquid to the chamber, a lid adapted to close the chamber, a liquid level sensor adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber, an acoustical energy source adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber, and means to supply a process gas to the chamber, the process gas supply means being located above the predetermined level and adapted to supply process gas to the chamber under pressure during mist creation.
摘要翻译：用于从半导体晶片剥离光致抗蚀剂的处理罐。在一个方面，本发明是一种具有处理室的处理罐，用于在处理室中支撑至少一个晶片的装置，用于向腔室供应处理液体的装置，适于封闭室的盖子，适于当所述处理液体将所述室填充到在所述处理室内支撑的晶片之下的预定水平时，停止向所述室供应工艺液体;声能源，其适于提供声能以处理位于所述室中的液体，以便产生处理室中的处理液体的雾，以及向处理室供应处理气体的装置，处理气体供应装置位于预定水平以上并且适于在雾气产生期间在压力下向处理室供应处理气体。

4. 发明申请

US20140305471A1 REDUCED CONSUMPTIONS STAND ALONE RINSE TOOL HAVING SELF-CONTAINED CLOSED-LOOP FLUID CIRCUIT, AND METHOD OF RINSING SUBSTRATES USING THE SAME 审中-公开
标题翻译：具有自包含闭环流体电路的单独消耗工具的降低消耗量以及使用该冲击流程的衬底的冲压方法
公开(公告)号：US20140305471A1
公开(公告)日：2014-10-16
申请号：US14239709
申请日：2012-08-20
申请人： Ismail Kashkoush , Dennis Nemeth , Gim-Syang Chen
发明人： Ismail Kashkoush , Dennis Nemeth , Gim-Syang Chen
IPC分类号： H01L21/67
CPC分类号： H01L21/67051
摘要： A system and method for rinsing substrates. In one embodiment, method comprises: a) providing a fixed volume of a rinse fluid in a rinse tool comprising a closed-loop fluid-circuit comprising a rinse tank, a deionizer, a pump, and a recirculation line fluidly coupled to an outlet of the rinse tank and an inlet of the rinse tank; and b) performing a plurality of rinse cycles in the rinse tool, each of the plurality of rinse cycles including: b-1) positioning a batch of substrates in the rinse tank; b-2) circulating the fixed volume of the rinse fluid through the fluid circuit for a rinse time, wherein during said circulation the rinse fluid contacts the batch of substrates, thereby becoming ionically contaminated rinse fluid, the deionizer removing ionic impurities from the ionically contaminated rinse fluid to produce deionized rinse fluid; and b-3) removing the batch of substrates from the rinse tank.
摘要翻译：一种用于冲洗底物的系统和方法。在一个实施方案中，方法包括：a）在冲洗工具中提供固定体积的冲洗流体，其包括闭环流体回路，其包括漂洗槽，去离子器，泵和流体耦合到冲洗槽和冲洗槽的入口; 和b）在所述冲洗工具中执行多个漂洗循环，所述多个漂洗循环中的每一个包括：b-1）将一批衬底定位在所述漂洗槽中; b-2）将固定体积的冲洗液循环通过流体回路进行冲洗时间，其中在所述循环期间，漂洗流体接触批次的基底，从而变成离子污染的冲洗液，去离子器从离子污染物中去除离子杂质冲洗流体产生去离子清洗液; 和b-3）从冲洗槽中取出一批基材。

5. 发明申请

US20080035609A1 System And Method for Selective Etching Of Silicon Nitride During Substrate Processing 有权
标题翻译：衬底加工中氮化硅选择性蚀刻的系统和方法
公开(公告)号：US20080035609A1
公开(公告)日：2008-02-14
申请号：US10585229
申请日：2004-12-30
申请人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
发明人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
IPC分类号： H01L21/302 , C23F1/02
CPC分类号： H01L21/31111
摘要： A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.
摘要翻译：一种系统（图5）和用于在存在氧化硅的情况下选择性地蚀刻氮化硅的方法，其在稳定氧化硅蚀刻速率的同时提供高选择性。本发明包括处理室（10），分配管线（20,21,22），进料管线（30,31,32），再循环管线（40），过程控制器（200），浓度传感器（50），粒子计数器（55）和渗血线（90）。本发明在处理所述至少一个基板期间动态地控制所使用的蚀刻剂的组分的浓度比和/或动态地控制蚀刻剂内的颗粒计数。因此，蚀刻液浴寿命增加，蚀刻工艺参数得到更严格的控制。

6. 发明授权

US07169253B2 Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing 有权
标题翻译：光刻胶剥离和/或清洁用于集成电路制造的光掩模的工艺顺序
公开(公告)号：US07169253B2
公开(公告)日：2007-01-30
申请号：US10909764
申请日：2004-08-02
申请人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
发明人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： G03F7/423 , G03F7/428
摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要翻译：一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时应用兆声波能量。本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

7. 发明申请

US20070123052A1 Process sequence for photoresist stripping and cleaning of photomasks for integrated circuit manufacturing 审中-公开
标题翻译：用于光刻胶剥离和清洁用于集成电路制造的光掩模的工艺顺序
公开(公告)号：US20070123052A1
公开(公告)日：2007-05-31
申请号：US11649535
申请日：2007-01-04
申请人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
发明人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
IPC分类号： B08B6/00 , B44C1/22 , H01L21/302 , C25F1/00 , H01L21/461 , C03C15/00
CPC分类号： G03F7/423 , G03F7/428
摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要翻译：一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时应用兆声波能量。本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

8. 发明申请

US20050026435A1 Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing 有权
标题翻译：光刻胶剥离和/或清洁用于集成电路制造的光掩模的工艺顺序
公开(公告)号：US20050026435A1
公开(公告)日：2005-02-03
申请号：US10909764
申请日：2004-08-02
申请人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
发明人： Gim-Syang Chen , Ismail Kashkoush , Richard Novak
IPC分类号： B08B3/12 , B08B7/00 , B08B7/02 , C23F1/00 , G03F20060101 , G03F7/42 , H01L21/306 , G03F9/00 , H01L21/302 , H01L21/461
CPC分类号： G03F7/423 , G03F7/428
摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要翻译：一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时应用兆声波能量。本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

9. 发明授权

US07976718B2 System and method for selective etching of silicon nitride during substrate processing 有权
标题翻译：在衬底处理期间选择性蚀刻氮化硅的系统和方法
公开(公告)号：US07976718B2
公开(公告)日：2011-07-12
申请号：US10585229
申请日：2004-12-30
申请人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
发明人： Ismail Kashkoush , Gim-Syang Chen , Richard Novak
IPC分类号： C03C15/00
CPC分类号： H01L21/31111
摘要： A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.
摘要翻译：一种系统（图5）和用于在存在氧化硅的情况下选择性地蚀刻氮化硅的方法，其在稳定氧化硅蚀刻速率的同时提供高选择性。本发明包括处理室（10），分配管线（20,21,22），进料管线（30,31,32），再循环管线（40），过程控制器（200），浓度传感器（50），粒子计数器（55）和渗血线（90）。本发明在处理所述至少一个基板期间动态地控制所使用的蚀刻剂的组分的浓度比和/或动态地控制蚀刻剂内的颗粒计数。因此，蚀刻液浴寿命增加，蚀刻工艺参数得到更严格的控制。

10. 发明授权

US08084280B2 Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology 有权
标题翻译：使用有助于均匀纹理形态的预清洁步骤制造太阳能电池的方法
公开(公告)号：US08084280B2
公开(公告)日：2011-12-27
申请号：US12898374
申请日：2010-10-05
申请人： Ismail Kashkoush , Gim-Syang Chen
发明人： Ismail Kashkoush , Gim-Syang Chen
IPC分类号： H01L21/00
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A method of manufacturing a solar cell wherein a pre-cleaning step is completed prior to a saw damage removal step and prior to texturization, thereby resulting in the subsequently formed textured surface to have a more homogeneous textural morphology. In one aspect, the invention is a method comprising: a) applying a pre-cleaning solution to an as-cut surface of a crystalline silicon substrate to remove surface contaminants, thereby converting the as-cut surface to a pre-cleaned surface, the as-cut surface formed by a sawing process to create the crystalline silicon substrate; b) applying a first etching solution to the pre-cleaned surface to remove physical damage caused during the sawing process, thereby converting the pre-cleaned surface into a prepared surface; c) applying a second etching solution to the prepared surface to texturize the prepared surface, thereby converting the prepared surface into a texturized surface; and d) forming at least one solar cell on the texturized surface of the crystalline silicon substrate.
摘要翻译：一种制造太阳能电池的方法，其中在锯损坏去除步骤之前和在纹理化之前完成预清洁步骤，从而导致随后形成的纹理表面具有更均匀的纹理形态。一方面，本发明是一种方法，包括：a）将预清洁溶液施加到晶体硅衬底的切割表面以除去表面污染物，从而将切割表面转化为预清洁的表面，通过锯切工艺形成的切割表面以产生晶体硅衬底; b）将第一蚀刻溶液施加到预清洁的表面以去除在锯切过程中引起的物理损伤，由此将预清洁的表面转化成准备好的表面; c）将第二蚀刻溶液施加到所制备的表面上以使所制备的表面纹理化，从而将制备的表面转化为组织化表面; 以及d）在所述晶体硅衬底的所述纹理化表面上形成至少一个太阳能电池。

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