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1. 发明授权

US06996894B2 Methods of making magnetic heads with improved contiguous junctions 失效
标题翻译：制造具有改进的连续结的磁头的方法
公开(公告)号：US06996894B2
公开(公告)日：2006-02-14
申请号：US10109110
申请日：2002-03-28
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.
摘要翻译：描述了制造具有改进的连续结的读取头的方法。在传感器层材料沉积在衬底上之后，在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。使用剥离掩模进行离子铣削，使得端部区域中的传感器层材料被去除，并且在中心区域中的传感器层材料保持形成读取传感器。然后执行高角度离子磨（例如在45-80度之间）以从剥离掩模的侧壁去除再沉积的材料。接下来，使用反应离子蚀刻（RIE）来减小剥离掩模的厚度和宽度，并从读取传感器的顶部边缘去除封盖层材料。随着尺寸减小的剥离掩模就位，硬读取传感器以及掩模附近沉积了硬偏置和引线层。缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量，并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。有利地，增强了传感器的稳定性，并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。不需要临界对准或多个光刻胶工艺。

2. 发明授权

US07497008B2 Method of fabricating a thin film magnetic sensor on a wafer 失效
标题翻译：在晶片上制造薄膜磁传感器的方法
公开(公告)号：US07497008B2
公开(公告)日：2009-03-03
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
发明人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译：本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。

3. 发明授权

US07281316B2 Perpendicular pole structure and method of fabricating the same 失效
标题翻译：垂直极结构及其制造方法
公开(公告)号：US07281316B2
公开(公告)日：2007-10-16
申请号：US10883336
申请日：2004-06-30
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

4. 发明授权

US07881011B2 Perpendicular pole structure and method of fabricating the same 有权
标题翻译：垂直极结构及其制造方法
公开(公告)号：US07881011B2
公开(公告)日：2011-02-01
申请号：US11836732
申请日：2007-08-09
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/187 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

5. 发明授权

US07627942B2 Method for using CVD process to encapsulate coil in a magnetic write head 失效
标题翻译：使用CVD工艺将线圈封装在磁写头中的方法
公开(公告)号：US07627942B2
公开(公告)日：2009-12-08
申请号：US11090457
申请日：2005-03-25
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/17
CPC分类号： G11B5/3133 , G11B5/17 , G11B5/3136 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
摘要翻译：使用诸如原子层沉积（ALD），高速ALD，等离子体增强ALD（PEALD），等离子体增强化学气相沉积（PECVD）等化学气相沉积工艺制造具有高纵横比的线圈的磁写头的方法，或低压化学气相沉积（LPCVD）以在无空隙的线圈上形成封装膜。可用于封装的材料包括Al2O3，SiO2，AlN，Ta2O5，HfO2，ZrO2和YtO3。使用超适形沉积工艺允许线圈的间距小于现有技术中可能的间距。该方法还允许使用具有比硬质光刻胶更小的热膨胀系数的材料，从而提高热突起特性。

6. 发明授权

US06919280B2 Method of removing magnetoresistive sensor cap by reactive ion etching 失效
标题翻译：通过反应离子蚀刻去除磁阻传感器盖的方法
公开(公告)号：US06919280B2
公开(公告)日：2005-07-19
申请号：US10271804
申请日：2002-10-15
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Son Van Nguyen , Sue Zhang
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Son Van Nguyen , Sue Zhang
IPC分类号： C23F4/00 , G11B5/31 , G11B5/39 , H01F41/30 , H01L43/08 , H01L43/12 , H01L21/302 , H01L21/461
CPC分类号： B82Y25/00 , B82Y10/00 , C23F4/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F41/302
摘要： During manufacture, a magnetoresistive sensor having a ferromagnetic free layer is commonly provided with a tantalum cap layer. The tantalum cap layer provides protection to the sensor during manufacture and then is typically removed after performing annealing. The removal of the tantalum cap with a fluorine reactive ion etch leaves low volatility tantalum/fluorine byproducts. The present invention provides a method of using an argon/hydrogen reactive ion etch to remove the tantalum/fluorine byproducts. The resulting sensor has far less damage resulting from the presence of the fluorine byproducts.
摘要翻译：在制造期间，具有铁磁性自由层的磁阻传感器通常设置有钽帽层。钽帽层在制造过程中为传感器提供保护，然后在退火之后通常被去除。用氟反应离子蚀刻去除钽帽留下低挥发性钽/氟副产物。本发明提供了一种使用氩/氢反应离子蚀刻去除钽/氟副产物的方法。所得到的传感器具有由于氟副产物的存在而造成的损害少得多。

7. 发明授权

US07251103B2 Perpendicular pole having and adjacent non-magnetic CMP resistant structure 有权
标题翻译：垂直极具有和相邻的非磁性CMP抗磨结构
公开(公告)号：US07251103B2
公开(公告)日：2007-07-31
申请号：US10882507
申请日：2004-06-30
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/147
CPC分类号： G11B5/1278
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

8. 发明授权

US07639456B2 Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage 失效
标题翻译：用于图形化垂直于平面（CPP）磁阻器件的电流的双轧机工艺，以最小化障碍物短路和屏障损坏
公开(公告)号：US07639456B2
公开(公告)日：2009-12-29
申请号：US11246720
申请日：2005-10-06
申请人： Ying Hong , Wipul Pemsiri Jayasekara
发明人： Ying Hong , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906
摘要： A current perpendicular to plane (CPP) sensor and method of manufacturing such a sensor that prevents current shunting at the sides of the barrier/spacer layer due to redeposited material. A first ion mill is performed to remove at least the free layer. A quick glancing ion mill can be performed to remove the small amount of redep that may have accumulated on the sides of the free layer and barrier/spacer layer. Then an insulation layer is deposited to protect the sides of the free layer/barrier layer during subsequent manufacturing which can include further ion milling to define the rest of the sensor and another glancing ion mill to remove the redep formed by the further ion milling. This results in a sensor having no current shunting at the sides of the sensor and having no damage to the sensor layers.
摘要翻译：垂直于平面（CPP）传感器的电流和制造这种传感器的方法，其防止由于再沉积材料在阻挡层/间隔层的侧面的电流分流。执行第一离子研磨以去除至少自由层。可以进行快速扫查离子磨，以除去可能积聚在自由层和阻挡层/间隔层的侧面上的少量重排物。然后沉积绝缘层以在随后的制造期间保护自由层/阻挡层的侧面，其可以包括进一步的离子铣削以限定传感器的其余部分和另一个扫掠离子磨机以移除由进一步的离子铣削形成的重复。这导致传感器在传感器的侧面没有电流分流并且不会损坏传感器层。

9. 发明申请

US20090246890A1 METHOD FOR MANUFACTURING A TUNNEL JUNCTION MAGNETORESISTIVE SENSOR WITH IMPROVED PERFORMANCE AND HAVING A CoFeB FREE LAYER 有权
标题翻译：用于制造具有改进性能并具有CoFeB自由层的隧道结型磁传感器的方法
公开(公告)号：US20090246890A1
公开(公告)日：2009-10-01
申请号：US12060006
申请日：2008-03-31
申请人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
发明人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303
摘要： A method for manufacturing a magnetoresistive sensor that provides increased magnetoresistive performance. The method includes forming a series of sensor layers with at least one layer containing CoFeB, and having a first capping layer thereover. A high temperature annealing is performed to optimize the grains structure of the sensor layers. The first capping layer is then removed, such as by reactive ion etching (RIE). An antiferromagnetic layer is then deposited followed by a second capping layer. A second annealing is performed to set the magnetization of the pinned layer, the second annealing being performed at a lower temperature than the first annealing.
摘要翻译：一种磁阻传感器的制造方法，其提供增加的磁阻性能。该方法包括形成一系列具有至少一层含有CoFeB的传感器层，并且在其上具有第一盖层。进行高温退火以优化传感器层的晶粒结构。然后去除第一覆盖层，例如通过反应离子蚀刻（RIE）。然后沉积反铁磁层，随后沉积第二盖层。执行第二退火以设定被钉扎层的磁化，第二退火在比第一退火更低的温度下进行。

10. 发明申请

US20090059437A1 DIFFERENTIAL CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTIVE SENSOR STRUCTURE HAVING IMPROVED ROBUSTNESS AGAINST SPIN TORQUE NOISE 有权
标题翻译：对具有改进的旋转噪声抑制噪声的大型磁传感器结构的平均电流的差分电流
公开(公告)号：US20090059437A1
公开(公告)日：2009-03-05
申请号：US11850570
申请日：2007-09-05
申请人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
发明人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.
摘要翻译：用于感测磁信号的差分巨磁阻传感器。微分传感器具有使旋转扭矩噪声最小化的结构。差动磁阻传感器包括第一和第二磁阻传感器元件和三引线结构，其包括夹在第一和第二传感器元件与第一和第二外引线之间的内引线。每个传感器元件包括反平行耦合的自由层结构，每个传感器元件的自由层优选地定位在内引线附近。三个引线结构允许感测电流被提供给传感器，使得电子首先通过每个传感器元件的自由层，然后穿过被钉扎层结构。

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