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1. 发明授权

US5698942A Field emitter flat panel display device and method for operating same 失效
标题翻译：场致发射体平板显示装置及其操作方法
公开(公告)号：US5698942A
公开(公告)日：1997-12-16
申请号：US681227
申请日：1996-07-22
申请人： Richard F. Greene , Stephen M. Bobbio , Farid M. Tranjan , Kasra Daneshvar , Thomas D. DuBois
发明人： Richard F. Greene , Stephen M. Bobbio , Farid M. Tranjan , Kasra Daneshvar , Thomas D. DuBois
IPC分类号： G09G3/22 , H01J3/02 , H01J1/30
CPC分类号： G09G3/22 , H01J3/022 , G09G2300/08 , H01J2329/00
摘要： A field emitter flat panel display and associated method of operation provides an electron emission path along which a beam of electrons emitted by a microelectronic field emitter travels such that the electrons impinge upon a light emitting element without passing through a mirror. The light emitting element is spaced apart from the microelectronic field emitter and includes a mirror and a luminescence layer on the mirror. The flat panel display can also include a deflector, such as a deflector electrode, which is spaced apart from both the microelectronic field emitter and the associated light emitting element and which controllably deflects the beam of electrons emitted by the microelectronic field emitter toward the luminescent layer of the associated light emitting element and along a curved electron emission path which is independent of the underlying mirror. Since the energy of the electrons is not dissipated by passing through a mirror prior to impinging upon the luminescent layer, the field emitter flat panel display and, more particularly, the microelectronic field emitter can be efficiently driven at relatively low voltage levels while still producing a relatively bright display.
摘要翻译：场发射器平板显示器和相关联的操作方法提供电子发射路径，微电子场发射器发射的电子束沿着该发射路径行进，使得电子撞击在发光元件上而不通过反射镜。发光元件与微电子场发射器间隔开，并且在反射镜上包括反射镜和发光层。平板显示器还可以包括偏转器电极，偏转器电极与微电子场发射器和相关联的发光元件两者间隔开，并且可控地将微电子场发射器发射的电子束偏转到发光层并且沿着独立于下面的反射镜的弯曲电子发射路径。由于在撞击发光层之前电子的能量不会通过反射镜而消散，所以可以在相当低的电压电平下有效地驱动场致发射体平板显示器，更具体地说，微电子场发射器驱动，同时仍然产生比较明亮的显示。

2. 发明授权

US5216359A Electro-optical method and apparatus for testing integrated circuits 失效
标题翻译：电光学方法和集成电路测试装置
公开(公告)号：US5216359A
公开(公告)日：1993-06-01
申请号：US644038
申请日：1991-01-18
申请人： Rafic Z. Makki , Kasra Daneshvar , Farid M. Tranjan , Richard F. Greene
发明人： Rafic Z. Makki , Kasra Daneshvar , Farid M. Tranjan , Richard F. Greene
IPC分类号： G01R31/28
CPC分类号： G01R31/2884
摘要： Internal test sites on integrated circuit chips may be tested with minimal input/output pad or chip area overhead by providing transient interconnections to the internal test sites using an optically activated photoconductive layer which is formed over the active device layers of the integrated circuit to be tested. The photoconductive layer may be optically activated using an optical mask or hologram, to electrically access the desired internal test sites. Different test sites may be tested using different masks or holograms. The photoconductive layer is preferably hydrogenated amorphous silicon which is highly compatible with standard integrated circuit processing.
摘要翻译：集成电路芯片上的内部测试点可以通过最小的输入/输出焊盘或芯片面积开销进行测试，通过使用光电激活的光导电层（内部测试点）形成瞬态互连，形成在被测集成电路的有源器件层上。光电导层可以使用光学掩模或全息图进行光学激活，以电接触所需的内部测试位置。可以使用不同的掩模或全息图测试不同的测试点。光电导层优选为与标准集成电路处理高度兼容的氢化非晶硅。

3. 发明授权

US4499481A Heterojunction Schottky gate MESFET with lower channel ridge barrier 失效
标题翻译：异质结肖特基门MESFET具有较低的沟道脊障
公开(公告)号：US4499481A
公开(公告)日：1985-02-12
申请号：US532122
申请日：1983-09-14
申请人： Richard F. Greene
发明人： Richard F. Greene
IPC分类号： H01L21/20 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L29/1029 , H01L21/02395 , H01L21/02532 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L29/7781
摘要： An FET with an extremely short channel formed by the apex of a substrate ridge structure protruding upward through the channel layer toward a Schottky-barrier gate contact. The device is formed by etching a modulation-doped substrate to form an upwardly protruding ridge with the apex modulation-doped. A semiconductor layer is then disposed over the substrate surface with the protruding ridge to obtain an epitaxial interface therebetween. Source and drain regions are doped into the semiconductor layer on opposite sides of the ridge structure. Finally, ohmic contacts are formed on the semiconductor layer over the source and drain regions and a Schottky-barrier metalization is deposited on the semiconductor layer above the ridge structure. This device has a very short channel, a low transit time, a low gate capacitance, and an enhanced transconductance.
摘要翻译：具有由衬底脊结构的顶点形成的极短通道的FET，其通过沟道层朝向肖特基势垒栅极接触向上突出。该器件通过蚀刻掺杂掺杂衬底形成具有顶点调制掺杂的向上突出的脊。然后将半导体层设置在具有突出脊的衬底表面上，以在它们之间获得外延界面。源区和漏区被掺杂到脊结构的相对侧上的半导体层中。最后，在源极和漏极区域上的半导体层上形成欧姆接触，并且在脊结构上方的半导体层上沉积肖特基势垒金属化。该器件具有非常短的通道，低通常时间，低栅极电容和增强的跨导。

4. 发明授权

US4307507A Method of manufacturing a field-emission cathode structure 失效
标题翻译：场致发射阴极结构的制造方法
公开(公告)号：US4307507A
公开(公告)日：1981-12-29
申请号：US185702
申请日：1980-09-10
申请人： Henry F. Gray , Richard F. Greene
发明人： Henry F. Gray , Richard F. Greene
IPC分类号： H01J9/02 , B01J17/00 , H01J1/02
CPC分类号： H01J9/025 , Y10S148/05
摘要： A method of manufacturing a field-emitter array cathode structure in which substrate of single crystal material is selectively masked such that the unmasked areas define islands on the underlying substrate. The single crystal material under the unmasked areas is orientation-dependent etched to form an array of holes whose sides intersect at a crystallographically sharp point. Following removal of the mask, the substrate is covered with a thick layer of material capable of emitting electrons which extends above the substrate surface and fills the holes. Thereafter, the material of the substrate underneath the layer of electron-emitting material is etched to expose a plurality of sharp field-emitter tips.
摘要翻译：一种制造场致发射阵列阴极结构的方法，其中单晶材料的衬底被选择性地屏蔽，使得未掩模的区域在下面的衬底上限定岛。在未掩模区域下的单晶材料是取向依赖蚀刻以形成一组孔，其侧面在结晶学尖锐点处相交。除去掩模之后，用能够发射电子的厚的材料层覆盖衬底，该材料在衬底表面上延伸并填充孔。此后，蚀刻在电子发射材料层下面的衬底的材料以暴露多个尖锐的场发射器尖端。

5. 发明授权

US4901028A Field emitter array integrated distributed amplifiers 失效
标题翻译：场发射极阵列集成分布式放大器
公开(公告)号：US4901028A
公开(公告)日：1990-02-13
申请号：US171706
申请日：1988-03-22
申请人： Henry F. Gray , Richard F. Greene
发明人： Henry F. Gray , Richard F. Greene
IPC分类号： H01J3/02 , H03F1/18 , H03F3/60
CPC分类号： H03F1/18 , H01J3/022 , H03F3/605
摘要： Distributed amplifiers in integrated circuit form wherein dielectric material and electrically conductive material combine to form field emitter cathodes, grids, and anodes in a module forming one or more amplifier cells embedded in a matrix of reactive impedances that form companion stripline-like transmission lines in a vacuum or sufficiently low pressure gas such that electrons remain unscattered during travel over trajectories from cathode to anode in a cell.
摘要翻译：以集成电路形式的分布式放大器，其中电介质材料和导电材料组合以在模块中形成场发射极阴极，栅极和阳极，形成嵌入在反应阻抗矩阵中的一个或多个放大器单元，所述反应阻抗矩阵形成相应的带状线状传输线真空或足够低的气体，使得电子在从阴极到阳极的轨迹中行进期间保持不散开。

6. 发明授权

US4843060A Method for growing patterned thin films of superconductors 失效
标题翻译：用于生长超导体的图案化薄膜的方法
公开(公告)号：US4843060A
公开(公告)日：1989-06-27
申请号：US123629
申请日：1987-11-23
申请人： Howard Lessoff , Richard F. Greene
发明人： Howard Lessoff , Richard F. Greene
IPC分类号： H01L39/24
CPC分类号： H01L39/2464 , H01L39/2425
摘要： A method for growing a patterned superconductive oxide film of the general formula XZ.sub.2 Cu.sub.3 O.sub.6+x is disclosed, wherein X is yttrium, a lanthanide or a mixture thereof, Z is one or more alkaline earth elements and x is a number between 0 and 1. This patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x is formed by preparing an aqueous solutuion of the nitrates of X, Z and Cu in the X:Z:Cu stoichiometric ratio of 1:2:3; spraying the aqueous nitrate solution onto a heated substrate to form on the substrate a thin film of XZ.sub.2 Cu.sub.3 O.sub.y material, wherein y is an undefined number; spot-heating preselected portions of the thin film in an oxygen-rich atmosphere to convert the preselected portions into the patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x ; and removing the unheated thin film of XZ.sub.2 Cu.sub.3 O.sub.y material with a solvent.
摘要翻译：公开了用于生长通式XZ2Cu3O6 + x的图案化超导氧化物膜的方法，其中X是钇，镧系元素或其混合物，Z是一种或多种碱土金属元素，x是0和1之间的数字。 XZ2Cu3O6 + x的图案超导氧化物膜通过以X:Z:Cu化学计量比为1:2:3制备X，Z和Cu的硝酸盐的水溶液而形成; 将硝酸水溶液喷洒到加热的基底上以在基底上形成XZ2Cu3Oy材料的薄膜，其中y是未定义数; 在富氧气氛中点状加热薄膜的预选部分，以将预选部分转化成XZ2Cu3O6 + x的图案化超导氧化物膜; 并用溶剂除去XZ2Cu3Oy材料的未加热薄膜。

7. 发明授权

US4147515A Electro-chemical sensors for gas detection in electron tubes 失效
标题翻译：用于电子管气体检测的电化学传感器
公开(公告)号：US4147515A
公开(公告)日：1979-04-03
申请号：US863363
申请日：1977-12-22
申请人： George A. Haas , Richard F. Greene , Arnold Shih
发明人： George A. Haas , Richard F. Greene , Arnold Shih
IPC分类号： G01N27/12 , H01J9/42 , G01N27/04
CPC分类号： G01N27/002 , H01J9/42
摘要： An electro-chemical gas sensor for use in electron tubes comprising a crylline body of BaO formed on a non-interacting (chemically and electrically) substrate and at least two electrodes. The change in conductivity of the barium oxide upon exposure to tube gases may be used to determine the type and quantity of gases contaminating the electron emitter and estimate changes in the emitter's work function or electron emission capability due to gas contamination.
摘要翻译：一种用于电子管的电化学气体传感器，包括形成在非相互作用（化学和电学）衬底和至少两个电极上的BaO结晶体。暴露于管气体时氧化钡的电导率的变化可用于确定污染电子发射体的气体的类型和数量，并估计由于气体污染引起的发射体功函数或电子发射能力的变化。

8. 发明授权

US5150192A Field emitter array 失效
标题翻译：场发射器阵列
公开(公告)号：US5150192A
公开(公告)日：1992-09-22
申请号：US718034
申请日：1991-06-20
申请人： Richard F. Greene , Henry F. Gray
发明人： Richard F. Greene , Henry F. Gray
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J1/3042 , H01J9/025 , H01J2209/0226
摘要： A field emitter structure is disclosed which comprises: a substrate selec from the group consisting of a semi-insulating substrate and an insulating substrate, the substrate having first and second surfaces and at least one hole therethrough; a first conducting layer disposed on the first surface of the substrate and having at least one aperture aligned with an associated at least one hole in the substrate, the at least one aperture of the first conducting layer comprising an extraction electrode; and a second conducting layer disposed on the second surface and projecting into the at least one hole in the substrate and into the at least one associated aperture of the first conducting layer and forming at least one associated apex inside the at least one hole, the at least one associated apex comprising an associated electron field emitter. In a second embodiment of the invention, a conducting substrate is substituted for the insulating or semi-insulating substrate, a first insulating layer is disposed between the first surface of the conducting substrate and the first conducting layer, and the second conducting layer disposed on the second surface also projects through at least one associated aperture of the first insulating later.
摘要翻译：公开了一种场致发射器结构，其包括：选自由半绝缘衬底和绝缘衬底组成的组的衬底，所述衬底具有第一和第二表面以及穿过其中的至少一个孔; 第一导电层，其设置在所述基板的所述第一表面上，并且具有与所述基板中的相关联的至少一个孔对准的至少一个孔，所述第一导电层的所述至少一个孔包括引出电极; 以及第二导电层，其设置在所述第二表面上并且突出到所述衬底中的所述至少一个孔中并且进入所述第一导电层的所述至少一个相关联的孔中，并且在所述至少一个孔内形成至少一个相关联的顶点，至少一个相关联的顶点包括相关的电子场发射器。在本发明的第二实施例中，导电衬底代替绝缘或半绝缘衬底，第一绝缘层设置在导电衬底的第一表面和第一导电层之间，第二导电层设置在第二导电层上第二表面也突出穿过稍后的第一绝缘体的至少一个相关联的孔。

9. 发明授权

US4745326A Method of manufacturing integral shadow gridded controlled porosity, dispenser cathodes 失效
标题翻译：整体式阴影网格控制孔隙度分配器阴极的制造方法
公开(公告)号：US4745326A
公开(公告)日：1988-05-17
申请号：US940121
申请日：1986-12-10
申请人： Richard F. Greene , Richard E. Thomas
发明人： Richard F. Greene , Richard E. Thomas
IPC分类号： H01J1/28 , H01J9/04 , H01J23/06 , H01J1/14
CPC分类号： H01J23/06 , H01J1/28 , H01J9/04
摘要： A controlled porosity dispenser cathode and method of manufacture therefo using chemical vapor deposition and laser drilling, ion milling, or electron discharge machining for consistent and economical manufacturing a cathode with pores on the order of 0.2 to 2 .mu.m in diameter.
摘要翻译：因此，可控制的孔隙分配器阴极及其制造方法使用化学气相沉积和激光钻孔，离子铣削或电子放电加工，以一致和经济地制造直径为0.2至2μm的孔的阴极。

10. 发明授权

US4578614A Ultra-fast field emitter array vacuum integrated circuit switching device 失效
标题翻译：超快速场发射极阵列真空集成电路开关装置
公开(公告)号：US4578614A
公开(公告)日：1986-03-25
申请号：US401277
申请日：1982-07-23
申请人： Henry F. Gray , Richard F. Greene
发明人： Henry F. Gray , Richard F. Greene
IPC分类号： H01J1/304 , H03K17/54 , H01J1/02
CPC分类号： H03K17/545 , H01J1/3042
摘要： A field-emitter switching device wherein a positive pulse is applied to a te (which is held at a bias potential V.sub.1 just below turn-on). A collector is held at a potential higher than the gate in order to collect emitted electrons from a field emitter source. As the voltage is applied to the gate, electrons are emitted immediately from the source and travel to the most positive potential at the collector. Because of the field emitter geometry, such electron transport is extremely fast. The ultra-fast switching speed is attained because the electrons reach near-maximum velocity within a few field tip diameters of the source.
摘要翻译：一种场致发射开关器件，其中正脉冲施加到栅极（其保持在刚好低于导通的偏置电位V1）。收集器被保持在比栅极高的电位，以便从场发射源收集发射的电子。当电压施加到栅极时，电子立即从源极发射并在集电极处行进到最正电位。由于场发射器几何形状，这种电子传输非常快。实现了超快的切换速度，因为电子在源的几个场尖端直径内达到接近最大速度。

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