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1. 发明授权

US07087913B2 Ion implanter electrodes 有权
标题翻译：离子注入电极
公开(公告)号：US07087913B2
公开(公告)日：2006-08-08
申请号：US10696782
申请日：2003-10-29
申请人： Richard David Goldberg , David George Armour , Christopher Burgess , Adrian J. Murrell
发明人： Richard David Goldberg , David George Armour , Christopher Burgess , Adrian J. Murrell
IPC分类号： H01J37/147 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/04756 , H01J2237/121 , H01J2237/31701
摘要： Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.
摘要翻译：提供了具有减速透镜组件的离子注入机，该减速透镜组件包括多个电极，其中减速电极的一个或多个孔径以能够提高离子注入机的性能的方式成形。在一个实施例中，电极孔的形状通常为椭圆形，并且通常符合通过孔的光束的形状。在另一方面，轴线段将孔的长度的40％从孔中心延伸到段末端的中间点。在从中心到中间点的每个点处测量的孔的平均宽度基本上小于孔的最大宽度。

2. 发明授权

US08281738B2 Cathode and counter-cathode arrangement in an ion source 有权
标题翻译：离子源中的阴极和反阴极排列
公开(公告)号：US08281738B2
公开(公告)日：2012-10-09
申请号：US11886526
申请日：2006-03-22
申请人： Andrew Stephen Devaney , Richard David Goldberg , Christopher Burgess , David George Armour , David Kirkwood
发明人： Andrew Stephen Devaney , Richard David Goldberg , Christopher Burgess , David George Armour , David Kirkwood
IPC分类号： H01J27/02
CPC分类号： H01J37/3171 , H01J27/08 , H01J37/08 , H01J2237/082
摘要： The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.
摘要翻译：本发明涉及包括适于离子注入机（10）的阴极（20）和反向阴极（44）的离子源（14）。通常，离子源保持在真空下并使用在电弧室（16）内产生的等离子体产生离子。从电弧室中提取等离子体离子，随后将其注入到半导体晶片（12）中。根据本发明的离子源还包括布置成将电子发射到电弧室中的阴极（40）位于电弧室中的电极（44），使得由阴极发射的电子入射到其上; 布置成偏置电极的一个或多个电压电位源（76）以及电压电位调节器（82），其可操作以在电极之间切换偏置电极的电压电位，从而充当阳极，并且电压电位源负极偏置电极，用作反向阴极。

3. 发明申请

US20090211896A1 Cathode and Counter-Cathode Arrangement in an Ion Source 有权
标题翻译：离子源中的阴极和反阴极排列
公开(公告)号：US20090211896A1
公开(公告)日：2009-08-27
申请号：US11886526
申请日：2006-03-22
申请人： Andrew Stephen Devaney , Richard David Goldberg , Christopher Burgess , David George Armour , David Kirkwood
发明人： Andrew Stephen Devaney , Richard David Goldberg , Christopher Burgess , David George Armour , David Kirkwood
IPC分类号： C23C14/46
CPC分类号： H01J37/3171 , H01J27/08 , H01J37/08 , H01J2237/082
摘要： The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.
摘要翻译：本发明涉及包括适于离子注入机（10）的阴极（20）和反向阴极（44）的离子源（14）。通常，离子源保持在真空下并使用在电弧室（16）内产生的等离子体产生离子。从电弧室中提取等离子体离子，随后将其注入到半导体晶片（12）中。根据本发明的离子源还包括布置成将电子发射到电弧室中的阴极（40）位于电弧室中的电极（44），使得由阴极发射的电子入射到其上; 布置成偏置电极的一个或多个电压电位源（76）以及电压电位调节器（82），其可操作以在电极之间切换偏置电极的电压电位，从而充当阳极，并且电压电位源负极偏置电极，用作反向阴极。

4. 发明授权

US06777882B2 Ion beam generator 有权
标题翻译：离子束发生器
公开(公告)号：US06777882B2
公开(公告)日：2004-08-17
申请号：US10336843
申请日：2003-01-06
申请人： Richard David Goldberg , David George Armour , Christopher Burgess
发明人： Richard David Goldberg , David George Armour , Christopher Burgess
IPC分类号： H01J724
CPC分类号： H01J37/08 , H01J37/3171
摘要： G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.
摘要翻译： G2电极安装成沿着光束线可移动，并且可选地垂直于它。 G1和G2在径向方向上以G1和G2之间的恒定间隙弯曲（使得两个电极是同心的）。这与现有技术形成对比，其中G1和G2沿着光束线方向等距间隔开。使G1与狭缝相邻，以提高等离子体的提取效率。最后，在G3的下游形成诸如四极透镜的透镜。

5. 发明授权

US07586101B2 Ion sources for ion implantation apparatus 有权
标题翻译：离子注入装置的离子源
公开(公告)号：US07586101B2
公开(公告)日：2009-09-08
申请号：US11018857
申请日：2004-12-22
申请人： Adrian John Murrell , Richard David Goldberg , Christopher J. S. Burgess , David George Armour , Erik J. H. Collart
发明人： Adrian John Murrell , Richard David Goldberg , Christopher J. S. Burgess , David George Armour , Erik J. H. Collart
IPC分类号： H01J27/14 , H01J37/08 , H01J37/317 , H01J1/20 , H01J27/20
CPC分类号： H01J27/08 , H01J37/08
摘要： The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.
摘要翻译：本发明涉及通过在离子源的离子室和其组成部分（例如电子源）中减少来自源的热损失来提高离子源的离子流的效率。这是通过用热反射和/或绝热材料衬里离子室和/或外部的内部并通过形成间接加热的阴极管来实现的，使得沿着管并离开离子室的热传递被在管中形成狭缝。通过用包含元素或其化合物的材料浸渍和/或涂覆离子室的前板来进一步提高离子源的效率，其中元素的离子与将被植入到基底中的元素的离子相同其来源。

6. 发明授权

US06847043B2 Ion sources for ion implantation apparatus 有权
标题翻译：离子注入装置的离子源
公开(公告)号：US06847043B2
公开(公告)日：2005-01-25
申请号：US10334136
申请日：2002-12-31
申请人： Adrian John Murrell , Richard David Goldberg , Christopher J. S. Burgess , David George Armour , Erik J. H. Collart
发明人： Adrian John Murrell , Richard David Goldberg , Christopher J. S. Burgess , David George Armour , Erik J. H. Collart
IPC分类号： H01J1/20 , H01J1/46 , H01J27/08 , H01J27/14 , H01J27/20 , H01J37/08 , H01J37/317 , H05H1/24
CPC分类号： H01J27/08 , H01J37/08
摘要： The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.
摘要翻译：本发明涉及通过在离子源的离子室和其组成部分（例如电子源）中减少来自源的热损失来提高离子源的离子流的效率。这是通过用热反射和/或绝热材料衬里离子室和/或外部的内部并通过形成间接加热的阴极管来实现的，使得沿着管并离开离子室的热传递被在管中形成狭缝。通过用包含元素或其化合物的材料浸渍和/或涂覆离子室的前板来进一步提高离子源的效率，其中元素的离子与将被植入到基底中的元素的离子相同其来源。

7. 发明申请

US20080129180A1 Ion sources for ion implantation apparatus 有权
标题翻译：离子注入装置的离子源
公开(公告)号：US20080129180A1
公开(公告)日：2008-06-05
申请号：US11018857
申请日：2004-12-22
申请人： Adrian John Murrell , Richard David Goldberg , Christopher J.S. Burgess , David George Armour , Erik J.H. Collart
发明人： Adrian John Murrell , Richard David Goldberg , Christopher J.S. Burgess , David George Armour , Erik J.H. Collart
IPC分类号： H01J1/20
CPC分类号： H01J27/08 , H01J37/08
摘要： The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.
摘要翻译：本发明涉及通过在离子源的离子室和其组成部分（例如电子源）中减少来自源的热损失来提高离子源的离子流的效率。这是通过用热反射和/或绝热材料衬里离子室和/或外部的内部并通过形成间接加热的阴极管来实现的，使得沿着管并离开离子室的热传递被在管中形成狭缝。通过用包含元素或其化合物的材料浸渍和/或涂覆离子室的前板来进一步提高离子源的效率，其中元素的离子与将被植入到基底中的元素的离子相同其来源。

8. 发明授权

US06897457B1 Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus 失效
标题翻译：用于在离子注入装置中监测和调整离子束的装置和方法
公开(公告)号：US06897457B1
公开(公告)日：2005-05-24
申请号：US09869795
申请日：1999-12-23
申请人： Andrew James Timothy Holmes , David Richard Burgin , Simon Povall , David George Armour , Drew Arnold
发明人： Andrew James Timothy Holmes , David Richard Burgin , Simon Povall , David George Armour , Drew Arnold
IPC分类号： C23C14/48 , H01J37/04 , H01J37/147 , H01J37/304 , H01J37/317 , H01L21/265 , H01J37/15
CPC分类号： H01J37/304 , H01J37/1471 , H01J37/3171 , H01J2237/1501
摘要： An ion implanter has an ion source (10) and an ion beam extraction assembly (50) for extracting the ions. The extraction assembly (50) is a tetrode structure and one of the pairs of extraction electrodes (51) has left and right ports (54, 55) located in opposite sides of the ion beam emerging from the ion source (10). The left and right electrode ports (54, 55) are electrically isolated from each other and connected to independent voltage sources (210, 230). The ion implanter also has a baffle plate (60) at the entrance to a mass analyser (90) downstream of the extraction assembly (50). The baffle plate (60) is also split into two halves (60′ and 60″). By measuring the beam current incident on the two halves (60′, 60″) of the baffle (60), the relative voltages supplied to the left and right electrode parts (54, 55) may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet (90).
摘要翻译：离子注入机具有用于提取离子的离子源（10）和离子束提取组件（50）。提取组件（50）是四极结构，并且一对提取电极（51）中的一个具有位于离离子源（10）的离子束相对侧的左端口和右端口（54,55）。左和右电极端口（54,55）彼此电隔离并且连接到独立的电压源（210,230）。离子注入机还在提取组件（50）下游的质量分析器（90）的入口处具有挡板（60）。挡板（60）也被分成两半（60'和60“）。通过测量入射在挡板（60）的两个半部（60'，60“）上的光束电流，可以调节供应到左和右电极部分（54,55）的相对电压，以便引导离子并且相对于分析磁体（90）的输入调节其纵轴的入射角。

9. 发明授权

US5969366A Ion implanter with post mass selection deceleration 失效
标题翻译：离子注入机，后质量选择减速
公开(公告)号：US5969366A
公开(公告)日：1999-10-19
申请号：US860748
申请日：1997-09-08
申请人： Jonathan Gerald England , Stephen Moffatt , David George Armour , Majeed Foad
发明人： Jonathan Gerald England , Stephen Moffatt , David George Armour , Majeed Foad
IPC分类号： H01J37/05 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/04756
摘要： A post mass selection decel lens (9) is located between the exit aperture (55) of the mass selection chamber (47) and the entry (74) to the electron confinement tube (69) of the PFS. The lens comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential, and a field electrode (61) between them at a relatively high (negative) potential sufficient to provide focusing of the ion beam at the first electrode. The first electrode is larger than the beam to avoid deflecting ions at the periphery of the aperture out of the beam. The first electrode has an aperture which is smaller than that of the field electrode. The field electrode is at least -5 kV relative to the flight tube, that is substantially more than required for electron suppression. Additional apertures are provided between the process chamber and the mass selection chamber to improve evacuation.
摘要翻译： PCT No.PCT / GB96 / 02740 Sec。 371日期：1997年9月8日 102（e）1997年9月8日PCT PCT 1996年11月8日PCT公布。第WO97 / 17716号公报日期1997年5月15日后质量选择减速透镜（9）位于质量选择室（47）的出口孔（55）和PFS的电子限制管（69）的入口（74）之间。该透镜包括在基底电位处的第一电极（65），处于飞行管电位的第二电极（60）和位于它们之间的场电极（61），其处于相对高（负）电位，足以提供离子的聚焦光束在第一电极处。第一电极大于光束，以避免将光圈外围的离子偏离光束。第一电极具有小于场电极的孔径。场电极相对于飞行管至少为-5kV，这实质上大于电子抑制所需要的。在处理室和质量选择室之间提供额外的孔，以改善抽气。

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