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1. 发明授权

US07435999B2 Semiconductor chip for optoelectronics and method for the production thereof 有权
标题翻译：光电半导体芯片及其生产方法
公开(公告)号：US07435999B2
公开(公告)日：2008-10-14
申请号：US11120774
申请日：2005-05-02
申请人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
发明人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/387
摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
摘要翻译：一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。用于薄膜层的载体被布置在其后侧并与其连接。在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

2. 发明申请

US20050258444A1 Semiconductor chip for optoelectronics and method for the production thereof 有权
标题翻译：光电半导体芯片及其生产方法
公开(公告)号：US20050258444A1
公开(公告)日：2005-11-24
申请号：US11120774
申请日：2005-05-02
申请人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
发明人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/20 , H01L33/38 , H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/387
摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
摘要翻译：一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。用于薄膜层的载体被布置在其后侧并与其连接。在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

3. 发明申请

US20090173961A1 Led Semiconductor Body and Use of an Led Semiconductor body 有权
标题翻译： LED半导体主体和使用的LED半导体主体
公开(公告)号：US20090173961A1
公开(公告)日：2009-07-09
申请号：US12087293
申请日：2006-12-13
申请人： Reiner Windisch , Günther Gröninger , Peter Heidborn , Christian Jung , Walter Wegleiter
发明人： Reiner Windisch , Günther Gröninger , Peter Heidborn , Christian Jung , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/0016 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.
摘要翻译：一种LED半导体本体，包括第一辐射生成有源层和第二辐射生成有源层，所述第一有源层和所述第二有源层在垂直方向上彼此上下布置。

4. 发明授权

US07932526B2 LED semiconductor body and use of an LED semiconductor body 有权
标题翻译： LED半导体体和使用LED半导体体
公开(公告)号：US07932526B2
公开(公告)日：2011-04-26
申请号：US12087293
申请日：2006-12-13
申请人： Reiner Windisch , Günther Grönninger , Peter Heidborn , Christian Jung , Walter Wegleiter
发明人： Reiner Windisch , Günther Grönninger , Peter Heidborn , Christian Jung , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/0016 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.
摘要翻译：一种LED半导体本体，包括第一辐射生成有源层和第二辐射生成有源层，所述第一有源层和所述第二有源层在垂直方向上彼此上下布置。

5. 发明授权

US08314431B2 LED semiconductor element having increased luminance 有权
标题翻译： LED半导体元件具有增加的亮度
公开(公告)号：US08314431B2
公开(公告)日：2012-11-20
申请号：US13116846
申请日：2011-05-26
申请人： Peter Heidborn , Reiner Windisch , Ralph Wirth
发明人： Peter Heidborn , Reiner Windisch , Ralph Wirth
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/18 , H01L29/22
CPC分类号： H01L25/0756 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.
摘要翻译：一种LED半导体元件，包括至少一个第一辐射产生有源层和至少一个第二辐射产生有源层，所述至少一个第二辐射产生有源层在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接，其中第一有源层和第二有源层通过接触区导电连接。

6. 发明授权

US08283684B2 LED semiconductor body and use of an LED semiconductor body 有权
标题翻译： LED半导体体和使用LED半导体体
公开(公告)号：US08283684B2
公开(公告)日：2012-10-09
申请号：US12443155
申请日：2007-09-19
申请人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
发明人： Reiner Windisch , Ralph Wirth , Stefan Groetsch , Georg Bogner , Guenter Kirchberger , Klaus Streubel
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/24 , H01L25/0756 , H01L25/167 , H01L33/08 , H01L2224/32145 , H01L2924/0002 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小跨越LED半导体体。本发明还描述了LED半导体本体的各种用途。

7. 发明申请

US20110227124A1 LED Semiconductor Element Having Increased Luminance 有权
标题翻译：增加亮度的LED半导体元件
公开(公告)号：US20110227124A1
公开(公告)日：2011-09-22
申请号：US13116846
申请日：2011-05-26
申请人： Peter Heidborn , Reiner Windisch , Ralph Wirth
发明人： Peter Heidborn , Reiner Windisch , Ralph Wirth
IPC分类号： H01L33/62
CPC分类号： H01L25/0756 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.
摘要翻译：一种LED半导体元件，包括至少一个第一辐射生成有源层和至少一个第二辐射生成有源层，其在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接，其中第一有源层和第二有源层通过接触区域导电连接。

8. 发明授权

US08003974B2 LED semiconductor element having increased luminance 有权
标题翻译： LED半导体元件具有增加的亮度
公开(公告)号：US08003974B2
公开(公告)日：2011-08-23
申请号：US12441758
申请日：2007-08-28
申请人： Peter Heidborn , Reiner Windisch , Ralph Wirth
发明人： Peter Heidborn , Reiner Windisch , Ralph Wirth
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/18 , H01L29/22
CPC分类号： H01L25/0756 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.
摘要翻译：一种LED半导体元件，具有至少一个第一辐射发生有源层和至少一个第二辐射产生有源层，该第一辐射产生有源层在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接。第一有源层和第二有源层通过接触区导电连接。

9. 发明申请

US20060151428A1 Method for roughening a surface of a body, and optoelectronic component 审中-公开
标题翻译：用于粗糙化身体表面的方法和光电子部件
公开(公告)号：US20060151428A1
公开(公告)日：2006-07-13
申请号：US10541298
申请日：2003-12-18
申请人： Reiner Windisch , Ralph Wirth , Heribert Zull
发明人： Reiner Windisch , Ralph Wirth , Heribert Zull
IPC分类号： C23F1/00 , H01L33/00
CPC分类号： H01L33/22 , H01L21/0337 , H01L21/3081 , H01L21/3086
摘要： A method for roughening a surface of a body (1), having the following steps of: coating the surface with a mask layer (2), applying preformed mask bodies (3) on the mask layer (2), etching through the mask layer (2) at locations not covered by mask bodies (3), and etching the body (1) at locations of its surface that are free of the mask layer (2).
摘要翻译：一种用于使体（1）的表面粗糙化的方法，具有以下步骤：用掩模层（2）涂覆表面，将预成型的掩模体（3）施加到掩模层（2）上，通过掩模层（2）在未被掩模体（3）覆盖的位置处，并且在其表面的没有掩模层（2）的位置处蚀刻主体（1）。

10. 发明授权

US07692204B2 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07692204B2
公开(公告)日：2010-04-06
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L29/08
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

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