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1. 发明授权

US06964878B2 Method for producing light emitting diode 有权
公开(公告)号：US06964878B2
公开(公告)日：2005-11-15
申请号：US10936354
申请日：2004-09-08
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
IPC分类号： B05D5/06 , H01L21/00 , H01L21/311 , H01L31/0203 , H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0079
摘要： The present invention discloses a method for producing an LED (light emitting diode), in which a transparent conductive film is formed between a transparent window and the front surface of a LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals. The transparent conductive film can be preliminarily formed on one of the transparent window and the LED epitaxial layer or both of them by a suitable process, for example, thermal pressure. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate.

2. 发明申请

US20050032383A1 Method for producing light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US20050032383A1
公开(公告)日：2005-02-10
申请号：US10936354
申请日：2004-09-08
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
IPC分类号： B05D5/06 , H01L21/00 , H01L21/311 , H01L31/0203 , H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0079
摘要： The present invention discloses a method for producing an LED (light emitting diode), in which a transparent conductive film is formed between a transparent window and the front surface of a LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals. The transparent conductive film can be preliminarily formed on one of the transparent window and the LED epitaxial layer or both of them by a suitable process, for example, thermal pressure. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate.
摘要翻译：本发明公开了一种用于制造LED（发光二极管）的方法，其中在透明窗口和LED外延层的前表面之间形成透明导电膜。透明导电膜可以是金属的氧化物，氮化物或氟化物。透明导电膜可以通过适当的工艺例如热压力预先形成在透明窗和LED外延层中的一个上，或者两者之中。通过涉及透明导电膜，由于提供了更大的截面面积，特别是与常规的玻璃或聚合物粘合剂旋涂相比，电流扩散得到改善，电阻降低。此外，由于诸如GaAs衬底之类的传统的不透明衬底，可以提高发光效率。

3. 发明授权

US07061065B2 Light emitting diode and method for producing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07061065B2
公开(公告)日：2006-06-13
申请号：US10405811
申请日：2003-03-31
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
IPC分类号： H01L29/72
CPC分类号： H01L33/42 , H01L33/0079
摘要： The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.
摘要翻译：本发明公开了一种LED（发光二极管），其主要包括透明窗，例如玻璃基板，至少包括有源层的LED外延层和形成在透明窗和LED外延层之间的透明导电膜层。透明导电膜可以是金属的氧化物，氮化物或氟化物，例如ITO，InO，SnO，ZnO等。通过涉及透明导电膜，提高了电流扩散，并且由于提供了更大的截面面积而阻止了电阻，特别是与传统的玻璃或聚合物粘合剂相比。另外，由于在透明窗口和有源层与透明导电膜组合之后，可以蚀刻常规的不透明衬底（例如其上生长有源层的GaAs衬底），可以蚀刻掉发光效率。

4. 发明授权

US06967117B2 Method for producing high brightness LED 失效
标题翻译：制造高亮度LED的方法
公开(公告)号：US06967117B2
公开(公告)日：2005-11-22
申请号：US10892043
申请日：2004-07-14
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang
IPC分类号： H01J1/62 , H01L21/00 , H01L33/00 , H01L33/46 , H05B33/00
CPC分类号： H01L33/46 , H01L33/0079
摘要： The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b) forming LED epitaxial layers on said temporary substrate, wherein said LED epitaxial layers with pn junction; c) providing a permanent substrate; d) forming a layered structure between said permanent substrate and said LED epitaxial layers, wherein said layered structure has properties of reflection, adhesion, diffusion barrier and buffer; and e) forming a first electrode and a second electrode on proper position to supply enough energy for said LED epitaxial layers. The LED manufactured in accordance with the present invention can exhibit high brightness and excellent mechanical strength during manufacturing.
摘要翻译：本发明公开了一种高亮度LED（发光二极管）的制造方法。该方法主要包括以下步骤：a）提供用于外延的临时衬底; b）在所述临时衬底上形成LED外延层，其中所述具有pn结的LED外延层; c）提供永久性底物; d）在所述永久性基板和所述LED外延层之间形成层状结构，其中所述层状结构具有反射，粘附，扩散阻挡和缓冲的特性; 以及e）在适当位置上形成第一电极和第二电极以为所述LED外延层提供足够的能量。根据本发明制造的LED可以在制造期间表现出高亮度和优异的机械强度。

5. 发明授权

US06759685B2 High-brightness light emitting diode 有权
标题翻译：高亮度发光二极管
公开(公告)号：US06759685B2
公开(公告)日：2004-07-06
申请号：US10259915
申请日：2002-09-30
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chih-Ru Chung , Juin-Jer Yang
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chih-Ru Chung , Juin-Jer Yang
IPC分类号： H01L2926
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/46
摘要： The present invention discloses a high-brightness light emitting diode (LED), which primarily includes a LED epitaxial layer with a reflective layer and a Si substrate with an adhesive layer. The LED epitaxial layer is bonded with the Si substrate by attaching the reflective layer and the adhesive layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode are deposed on the front side of the LED. In the present invention, the reflective layer, the adhesive layer and the ohmic contact electrodes preferably perform single function, so that the most appropriate materials can be applied. Therefore, the LED of the present invention can exhibit excellent brightness.
摘要翻译：本发明公开了一种高亮度发光二极管（LED），其主要包括具有反射层的LED外延层和具有粘合剂层的Si衬底。 LED外延层通过安装反射层和粘合剂层与Si衬底结合。 n型欧姆接触电极和p型欧姆接触电极放在LED的前侧。在本发明中，反射层，粘合剂层和欧姆接触电极优选具有单一功能，从而可以应用最合适的材料。因此，本发明的LED可以显示出优异的亮度。

6. 发明授权

US07781785B2 Light emitting diode with plated substrate and method for producing the same 有权
标题翻译：具有电镀基板的发光二极管及其制造方法
公开(公告)号：US07781785B2
公开(公告)日：2010-08-24
申请号：US10668555
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
发明人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
IPC分类号： H01L33/00
CPC分类号： H01L33/64 , H01L33/0079 , H01L33/46
摘要： The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.
摘要翻译：本发明公开了一种具有反射镜的发光二极管及其上镀有永久性基板。本发明还公开了一种制造这种发光二极管的方法。在两个电极完成之后形成永久性基板和反射镜。因此，不会损坏外延结构和反射镜，并且改善了发光器件的亮度和散热。

7. 发明申请

US20050191777A1 Method for producing light emitting diode with plated substrate 审中-公开
标题翻译：具有电镀基板的发光二极管的制造方法
公开(公告)号：US20050191777A1
公开(公告)日：2005-09-01
申请号：US11122484
申请日：2005-05-04
申请人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
发明人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
IPC分类号： H01L21/00 , H01L33/00 , H01L33/32 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/32
摘要： The present invention discloses a method for producing a light emitting diode with a mirror and a plated substrate. The mirror and the plated substrate are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.
摘要翻译：本发明公开了一种制造具有反射镜和镀覆基板的发光二极管的方法。在两个电极完成之后形成反射镜和镀覆的基板。因此，不会损坏外延结构和反射镜，并且改善了发光器件的亮度和散热。

8. 发明授权

US08895332B2 Light-emitting diode chip with high light extraction and method for manufacturing the same 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US08895332B2
公开(公告)日：2014-11-25
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L21/00 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

9. 发明申请

US20090078952A1 LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY 有权
标题翻译：具有高导热性的发光芯片器件
公开(公告)号：US20090078952A1
公开(公告)日：2009-03-26
申请号：US12047165
申请日：2008-03-12
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.
摘要翻译：本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能用于通过电光效应产生光。外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。在衬底和外延层结构之间形成导热透明反射层。电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。提供了本发明的芯片装置的制造方法。

10. 发明申请

US20100136728A1 LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US20100136728A1
公开(公告)日：2010-06-03
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/46 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

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