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1. 发明授权

US07319248B2 High brightness light emitting diode 有权
标题翻译：高亮度发光二极管
公开(公告)号：US07319248B2
公开(公告)日：2008-01-15
申请号：US10892044
申请日：2004-07-14
申请人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.
摘要翻译：本发明公开了一种高亮度发光二极管。发光二极管主要包括永久性基板，形成在所述永久基板上的反射镜，形成在所述反射镜上的n型包覆层，并在其上表面上形成较高端口和下端口;活性层，形成在所述n型包覆层的所述较高端口上的量子阱结构，形成在所述有源层上的p型覆层，形成在所述p型覆层上的p-GaP层，形成在所述GaP上的金属接触层形成在所述金属接触层上的p型欧姆接触电极和形成在所述n型覆层的所述下端口上的n型欧姆接触电极。通过提供磷化镓窗口和反射镜，可以促进LED的亮度。

2. 发明授权

US06979582B2 Vertical-cavity surface emitting laser diode and method for producing the same 失效
标题翻译：垂直腔表面发射激光二极管及其制造方法
公开(公告)号：US06979582B2
公开(公告)日：2005-12-27
申请号：US10668553
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu
发明人： Ray-Hua Horng , Dong-Sing Wu
IPC分类号： H01L21/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/0425 , H01S5/0614 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2081 , Y10S362/80
摘要： The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.
摘要翻译：本发明提供了垂直腔表面发射激光（VCSEL）二极管及其制造方法。在该方法中，预先设置n型和p型欧姆接触电极，然后形成两对分布式布拉格反射器（DBR）。最后，对永久性金属基板进行电镀。根据本发明，可以在快速热退火期间保持DBR的反射率而不损坏，因此提高了激光二极管的亮度。

3. 发明申请

US20050226299A1 Vertical-cavity surface emitting laser diode 审中-公开
标题翻译：垂直腔表面发射激光二极管
公开(公告)号：US20050226299A1
公开(公告)日：2005-10-13
申请号：US11147760
申请日：2005-06-08
申请人： Ray-Hua Horng , Dong-Sing Wu
发明人： Ray-Hua Horng , Dong-Sing Wu
IPC分类号： H01L21/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/0425 , H01S5/0614 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2081 , Y10S362/80
摘要： The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror is formed therewithin. According to the present invention, light beams emitting from the active layer will not be shielded by a central electrode and brightness of the laser diode is improved.
摘要翻译：本发明提供了一种VCSEL（垂直腔表面发射激光）二极管，其中在有源层上形成p型覆层并被绝缘边缘包围。在靠近绝缘边缘的p型覆层上形成环形p型电极，并在其中形成上DBR反射镜。根据本发明，从有源层发射的光束不会被中心电极屏蔽，并且提高了激光二极管的亮度。

4. 发明申请

US20050063437A1 Vertical-cavity surface emitting laser diode and method for producing the same 失效
公开(公告)号：US20050063437A1
公开(公告)日：2005-03-24
申请号：US10668553
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu
发明人： Ray-Hua Horng , Dong-Sing Wu
IPC分类号： H01L21/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/0425 , H01S5/0614 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2081 , Y10S362/80
摘要： The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.

5. 发明申请

US20050191777A1 Method for producing light emitting diode with plated substrate 审中-公开
标题翻译：具有电镀基板的发光二极管的制造方法
公开(公告)号：US20050191777A1
公开(公告)日：2005-09-01
申请号：US11122484
申请日：2005-05-04
申请人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
发明人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
IPC分类号： H01L21/00 , H01L33/00 , H01L33/32 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/32
摘要： The present invention discloses a method for producing a light emitting diode with a mirror and a plated substrate. The mirror and the plated substrate are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.
摘要翻译：本发明公开了一种制造具有反射镜和镀覆基板的发光二极管的方法。在两个电极完成之后形成反射镜和镀覆的基板。因此，不会损坏外延结构和反射镜，并且改善了发光器件的亮度和散热。

6. 发明申请

US20050062061A1 High brightness light emitting diode 有权
标题翻译：高亮度发光二极管
公开(公告)号：US20050062061A1
公开(公告)日：2005-03-24
申请号：US10892044
申请日：2004-07-14
申请人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079
摘要： The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.
摘要翻译：本发明公开了一种高亮度发光二极管。发光二极管主要包括永久性基板，形成在所述永久基板上的反射镜，形成在所述反射镜上的n型包覆层，并在其上表面上形成较高端口和下端口;活性层，形成在所述n型包覆层的所述较高端口上的量子阱结构，形成在所述有源层上的p型覆层，形成在所述p型覆层上的p-GaP层，形成在所述GaP上的金属接触层形成在所述金属接触层上的p型欧姆接触电极和形成在所述n型覆层的所述下端口上的n型欧姆接触电极。通过提供磷化镓窗口和反射镜，可以促进LED的亮度。

7. 发明授权

US06656756B2 Technique for a surface-emitting laser diode with a metal reflector 失效
标题翻译：具有金属反射器的表面发射激光二极管的技术
公开(公告)号：US06656756B2
公开(公告)日：2003-12-02
申请号：US09935646
申请日：2001-08-24
申请人： Ray-Hua Horng , Dong-Sing Wu , Wei-Chih Peng , Wen-Jeng Ho , Ying-Shun Huang
发明人： Ray-Hua Horng , Dong-Sing Wu , Wei-Chih Peng , Wen-Jeng Ho , Ying-Shun Huang
IPC分类号： H01L2100
CPC分类号： H01S5/18375 , H01S5/0217 , H01S5/1838
摘要： The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc.
摘要翻译：本发明涉及一种用金属反射体制造表面发射激光二极管的方法。主要是使用金属反射器和晶片接合技术的组合来代替制造VCSEL布拉格反射器的传统表面处理工艺或高温高压晶片接合技术。金属反射器具有高反射率，其材料被选择以与VCSEL材料形成欧姆接触。此外，用于金属反射器的基板可以以便宜的价格和良好的散热来选择。其他优点包括工艺简单，生产成本低，VCSEL特性等。

8. 发明授权

US07781785B2 Light emitting diode with plated substrate and method for producing the same 有权
标题翻译：具有电镀基板的发光二极管及其制造方法
公开(公告)号：US07781785B2
公开(公告)日：2010-08-24
申请号：US10668555
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
发明人： Ray-Hua Horng , Dong-Sing Wu , Shao-Hua Huang , Chi-Ying Chiu , Yann-Jyh Chiang
IPC分类号： H01L33/00
CPC分类号： H01L33/64 , H01L33/0079 , H01L33/46
摘要： The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.
摘要翻译：本发明公开了一种具有反射镜的发光二极管及其上镀有永久性基板。本发明还公开了一种制造这种发光二极管的方法。在两个电极完成之后形成永久性基板和反射镜。因此，不会损坏外延结构和反射镜，并且改善了发光器件的亮度和散热。

9. 发明授权

US06806112B1 High brightness light emitting diode 有权
标题翻译：高亮度发光二极管
公开(公告)号：US06806112B1
公开(公告)日：2004-10-19
申请号：US10668554
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Dong-Sing Wu , Yann-Jyh Chiang , Chi-Ying Chiu
IPC分类号： H01L2100
CPC分类号： H01L33/0079
摘要： The present invention discloses a high brightness light emitting diode and a method for producing the same. The light emitting diode includes a gallium phosphide window and a reflective mirror so as to promote brightness thereof. To produce the light emitting diode, a glass substrate is bonded to the main structure of the light emitting diode and then the temporary substrate for epitaxing thereon can be removed for depositing a reflective mirror. After bonding a permanent substrate below the reflective mirror, the glass substrate is removed, too. By means of the double-bonding process, reflectivity of the mirror is maintained in the present invention.
摘要翻译：本发明公开了一种高亮度发光二极管及其制造方法。发光二极管包括磷化镓窗口和反射镜，以促进其亮度。为了制造发光二极管，将玻璃基板结合到发光二极管的主结构，然后可以去除其上的用于表征的临时基板以沉积反射镜。在将反射镜下方的永久基板粘合后，玻璃基板也被去除。通过双键合工艺，本发明保持了反射镜的反射率。

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