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1. 发明授权

US06849153B2 Removal of post-rie polymer on A1/CU metal line 有权
标题翻译：去除A1 / CU金属线上的后聚合物
公开(公告)号：US06849153B2
公开(公告)日：2005-02-01
申请号：US09204706
申请日：1998-12-03
申请人： Ravikumar Ramachandran , Wesley Natzle , Martin Gutsche , Hiroyuki Akatsu , Chien Yu
发明人： Ravikumar Ramachandran , Wesley Natzle , Martin Gutsche , Hiroyuki Akatsu , Chien Yu
IPC分类号： H01L21/302 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/306 , H01L21/3065 , H01L21/3205 , H01L21/3213 , C23F1/08
CPC分类号： H01L21/02071 , H01L21/02054 , H01L21/31138 , H01L21/32136 , Y10S134/902
摘要： A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising: 1) supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber in which said composite structure is supported to form a water soluble material of sidewall polymer rails left behind on the Al/Cu metal line from the RIE process; removing the water soluble material with deionized water; and removing photo-resist from said composite structure by either a water-only plasma process or a chemical down stream etching method; or 2) forming a water-only plasma process to strip the photo-resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE process; supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber on which said structure is supported to form a water soluble material of saidwall polymer rails left behind on the Al/Cu metal line from the RIE process; and removing the water soluble material with deionized water.
摘要翻译：一种用于去除在半导体或微电子复合结构的Al / Cu金属线上的反应活性离子蚀刻侧壁聚合物轨道的方法，包括：1）将蚀刻气体和酸中和气体的混合物供应到真空室中，其中所述复合材料结构被支撑以形成从RIE工艺在Al / Cu金属线上留下的侧壁聚合物轨道的水溶性材料; 用去离子水去除水溶性物质; 以及通过水纯等离子体工艺或化学下游蚀刻方法从所述复合结构中除去光致抗蚀剂; 或2）形成仅水性等离子体工艺以剥离先前经受RIE工艺的半导体或微电子复合结构的光致抗蚀剂层;将蚀刻气体和酸中和气体的混合物供应到真空室中，在真空室中，被支撑以形成从RIE工艺在Al / Cu金属线上留下的所述壁聚合物轨道的水溶性材料; 并用去离子水去除水溶性物质。

2. 发明授权

US5980770A Removal of post-RIE polymer on Al/Cu metal line 失效
标题翻译：在Al / Cu金属线上去除RIE后聚合物
公开(公告)号：US5980770A
公开(公告)日：1999-11-09
申请号：US061565
申请日：1998-04-16
申请人： Ravikumar Ramachandran , Wesley Natzle , Martin Gutsche , Hiroyuki Akatsu , Chien Yu
发明人： Ravikumar Ramachandran , Wesley Natzle , Martin Gutsche , Hiroyuki Akatsu , Chien Yu
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3213 , C03C25/06 , C23F1/12
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/32136 , Y10S438/906
摘要： A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising:1) supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber in which said composite structure is supported to form a water soluble material of sidewall polymer rails left behind on the Al/Cu metal line from the RIE process; removing the water soluble material with deionized water; and removing photo-resist from said composite structure by either a water-only plasma process or a chemical down stream etching method; or2) forming a water-only plasma process to strip the photo-resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE process;supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber on which said structure is supported to form a water soluble material of saidwall polymer rails left behind on the Al/Cu metal line from the RIE process; andremoving the water soluble material with deionized water.
摘要翻译：一种用于去除在半导体或微电子复合结构的Al / Cu金属线上的反应活性离子蚀刻侧壁聚合物轨道的方法，包括：1）将蚀刻气体和酸中和气体的混合物供应到真空室中，其中所述复合材料结构被支撑以形成从RIE工艺在Al / Cu金属线上留下的侧壁聚合物轨道的水溶性材料; 用去离子水去除水溶性物质; 以及通过水纯等离子体工艺或化学下游蚀刻方法从所述复合结构中除去光致抗蚀剂; 或2）形成仅水等离子体工艺以剥离先前经过RIE工艺的半导体或微电子复合结构的光致抗蚀剂层; 将一种蚀刻气体和酸中和气体的混合物供给到所述结构被支撑的真空室中，以形成从RIE工艺在Al / Cu金属管线上留下的所述壁聚合物轨道的水溶性材料; 并用去离子水除去水溶性物质。

3. 发明申请

US20060176145A1 Electronic substrates with thin-film resistors coupled to one or more relatively thick traces 审中-公开
标题翻译：具有耦合到一个或多个相对厚的迹线的薄膜电阻器的电子衬底
公开(公告)号：US20060176145A1
公开(公告)日：2006-08-10
申请号：US11053636
申请日：2005-02-07
申请人： Yongki Min , Chien Yu
发明人： Yongki Min , Chien Yu
IPC分类号： H01C1/012
CPC分类号： H01L28/24 , H01C7/006 , H01C17/08 , H05K1/0263 , H05K1/167 , H05K2201/0317 , H05K2203/1461
摘要： A substrate that includes an embedded thin-film resistor coupled to one or more relatively thick conductive traces, and its application, are described herein.
摘要翻译：本文描述了包括耦合到一个或多个相对厚的导电迹线的嵌入式薄膜电阻器及其应用的衬底。

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