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    • 10. 发明授权
    • Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers
    • 用于控制双极晶体管外延层中的N型掺杂浓度深度分布的方法
    • US06346452B1
    • 2002-02-12
    • US09303957
    • 1999-05-03
    • Abul Ehsanul KabirRashid Bashir
    • Abul Ehsanul KabirRashid Bashir
    • H01L218222
    • H01L29/66242H01L29/36H01L29/66272
    • Process for the formation of epitaxial layers with controlled n-type dopant concentration depth profiles for use in NPN bipolar transistors. The process includes first providing a semiconductor substrate (e.g. a [100]-oriented silicon wafer substrate) with an n-type collector precursor region formed on its surface, followed by forming an n-type (e.g. phosphorous or arsenic) in-situ doped epitaxial layer of a thickness t1 on the n-type collector precursor region. Next, an undoped epitaxial layer of a thickness t2 is formed on the n-type in-situ doped epitaxial layer. A p-type (e.g. boron) in-situ doped epitaxial base layer is subsequently formed on the undoped epitaxial layer. The process can also include the sequential formation of an undoped Si1−xGex epitaxial layer and a p-type in-situ doped Si1−xGex epitaxial layer between the undoped epitaxial layer and the p-type in-situ doped epitaxial base layer. Accumulation of the n-type dopant concentration in p-type epitaxial layers (such as the p-type in-situ doped epitaxial base layer or the p-type in-situ doped Si1−xGex epitaxial layer) that are formed subsequent to a non-p-type epitaxial layer (such as the undoped epitaxial layer or undoped Si1−xGex epitaxial layer, respectively) is controlled by manipulating the thickness ratio of t2 to t1, while keeping the thickness of N-layer fixed at t (i.e. t1+t2).
    • 用于形成具有用于NPN双极晶体管的受控n型掺杂浓度深度分布的外延层的工艺。 该方法包括首先在其表面上形成n型集电极前体区,然后形成n型(例如磷或砷)原位掺杂的半导体衬底(例如[100]取向硅晶片衬底) 在n型集电极前体区域上具有厚度t1的外延层。 接下来,在n型原位掺杂外延层上形成厚度为t2的未掺杂的外延层。 随后在未掺杂的外延层上形成p型(例如硼)原位掺杂的外延基底层。 该工艺还可以包括在未掺杂的外延层和p型原位掺杂的外延基底层之间顺序地形成未掺杂的Si1-xGex外延层和p型原位掺杂的Si1-xGex外延层。 p型外延层(例如p型原位掺杂外延基底层或p型原位掺杂的Si1-xGex外延层)中的n型掺杂剂浓度的积累是在非 - p型外延层(例如未掺杂的外延层或未掺杂的Si1-xGex外延层)分别通过操纵t2至t1的厚度比来控制,同时保持N层的厚度固定在t(即t1 + t2)。