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1. 发明授权

US06346452B1 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers 有权
标题翻译：用于控制双极晶体管外延层中的N型掺杂浓度深度分布的方法
公开(公告)号：US06346452B1
公开(公告)日：2002-02-12
申请号：US09303957
申请日：1999-05-03
申请人： Abul Ehsanul Kabir , Rashid Bashir
发明人： Abul Ehsanul Kabir , Rashid Bashir
IPC分类号： H01L218222
CPC分类号： H01L29/66242 , H01L29/36 , H01L29/66272
摘要： Process for the formation of epitaxial layers with controlled n-type dopant concentration depth profiles for use in NPN bipolar transistors. The process includes first providing a semiconductor substrate (e.g. a [100]-oriented silicon wafer substrate) with an n-type collector precursor region formed on its surface, followed by forming an n-type (e.g. phosphorous or arsenic) in-situ doped epitaxial layer of a thickness t1 on the n-type collector precursor region. Next, an undoped epitaxial layer of a thickness t2 is formed on the n-type in-situ doped epitaxial layer. A p-type (e.g. boron) in-situ doped epitaxial base layer is subsequently formed on the undoped epitaxial layer. The process can also include the sequential formation of an undoped Si1−xGex epitaxial layer and a p-type in-situ doped Si1−xGex epitaxial layer between the undoped epitaxial layer and the p-type in-situ doped epitaxial base layer. Accumulation of the n-type dopant concentration in p-type epitaxial layers (such as the p-type in-situ doped epitaxial base layer or the p-type in-situ doped Si1−xGex epitaxial layer) that are formed subsequent to a non-p-type epitaxial layer (such as the undoped epitaxial layer or undoped Si1−xGex epitaxial layer, respectively) is controlled by manipulating the thickness ratio of t2 to t1, while keeping the thickness of N-layer fixed at t (i.e. t1+t2).
摘要翻译：用于形成具有用于NPN双极晶体管的受控n型掺杂浓度深度分布的外延层的工艺。该方法包括首先在其表面上形成n型集电极前体区，然后形成n型（例如磷或砷）原位掺杂的半导体衬底（例如[100]取向硅晶片衬底）在n型集电极前体区域上具有厚度t1的外延层。接下来，在n型原位掺杂外延层上形成厚度为t2的未掺杂的外延层。随后在未掺杂的外延层上形成p型（例如硼）原位掺杂的外延基底层。该工艺还可以包括在未掺杂的外延层和p型原位掺杂的外延基底层之间顺序地形成未掺杂的Si1-xGex外延层和p型原位掺杂的Si1-xGex外延层。 p型外延层（例如p型原位掺杂外延基底层或p型原位掺杂的Si1-xGex外延层）中的n型掺杂剂浓度的积累是在非 - p型外延层（例如未掺杂的外延层或未掺杂的Si1-xGex外延层）分别通过操纵t2至t1的厚度比来控制，同时保持N层的厚度固定在t（即t1 + t2）。

2. 发明授权

US5856239A Tungsten silicide/ tungsten polycide anisotropic dry etch process 失效
标题翻译：硅化钨/聚硅氧烷多向干蚀刻工艺
公开(公告)号：US5856239A
公开(公告)日：1999-01-05
申请号：US850573
申请日：1997-05-02
申请人： Rashid Bashir , Abul Ehsanul Kabir , Francois Hebert
发明人： Rashid Bashir , Abul Ehsanul Kabir , Francois Hebert
IPC分类号： H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137
摘要： A process for anisotropically etching a tungsten silicide or tungsten polycide structure. If the silicide/polycide film has an overlying oxide layer, the insulating layer is removed by a gas mixture composed of CHF.sub.3 and C.sub.2 F.sub.6. The WSi.sub.x silicide layer is then etched in a reactive ion etch using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6, with sufficient O.sub.2 added to control polymer formation and prevent undercutting of the silicide. The polysilicon layer is then etched using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6. The result is a highly anisotropic etch process which preserves the critical dimension of the etched structures. The etch parameters may be varied to produce a tapered sidewall profile for use in the formation of butted contacts without the need for a contact mask.
摘要翻译：用于各向异性蚀刻硅化钨或聚钨酸钨结构的方法。如果硅化物/多硅化物膜具有上覆氧化物层，则通过由CHF 3和C 2 F 6组成的气体混合物除去绝缘层。然后使用由Cl 2和C 2 F 6形成的气体混合物在反应离子蚀刻中对WSix硅化物层进行蚀刻，加入足够的O 2以控制聚合物形成并防止硅化物的底切。然后使用由Cl 2和C 2 F 6形成的气体混合物来蚀刻多晶硅层。结果是高度各向异性的蚀刻工艺，其保留蚀刻结构的临界尺寸。可以改变蚀刻参数以产生用于形成对接触点的锥形侧壁轮廓，而不需要接触掩模。

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