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1. 发明授权

US06627107B2 Slurry for chemical mechanical polishing silicon dioxide 有权
公开(公告)号：US06627107B2
公开(公告)日：2003-09-30
申请号：US10192471
申请日：2002-07-10
申请人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
发明人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
IPC分类号： C09K1302
CPC分类号： C09G1/02
摘要： A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

2. 发明授权

US06491843B1 Slurry for chemical mechanical polishing silicon dioxide 有权
标题翻译：浆料用于化学机械抛光二氧化硅
公开(公告)号：US06491843B1
公开(公告)日：2002-12-10
申请号：US09526286
申请日：2000-03-15
申请人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
发明人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
IPC分类号： C09K1300
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad. The aqueous slurry and method of the present invention provide high silicon dioxide to silicon nitride removal rate selectivity over a wide range of pH, which is particularly useful for the fabrication of shallow trench isolation structures on semiconductor devices.
摘要翻译：本发明涉及一种特别适用于通过化学机械处理去除二氧化硅而不是氮化硅的含水浆料。根据本发明的含水浆料包括磨粒和具有羧酸官能团和选自胺和卤化物的第二官能团的有机化合物。本发明还涉及通过化学机械抛光从制品表面去除二氧化硅优先于氮化硅的方法。该方法包括使用抛光垫，水，磨粒和具有羧酸官能团和选自胺和卤化物的第二官能团的有机化合物来抛光表面。研磨颗粒可以分散在水性介质中，或者它们可以结合到抛光垫上。本发明的含水浆料和方法在宽范围的pH下提供高二氧化硅至氮化硅去除速率选择性，这对于在半导体器件上制造浅沟槽隔离结构特别有用。

3. 发明授权

US06468910B1 Slurry for chemical mechanical polishing silicon dioxide 有权
标题翻译：浆料用于化学机械抛光二氧化硅
公开(公告)号：US06468910B1
公开(公告)日：2002-10-22
申请号：US09456612
申请日：1999-12-08
申请人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
发明人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
IPC分类号： H01L21302
CPC分类号： C09G1/02
摘要： A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.
摘要翻译：用于微电子工业中的化学机械平面化（CMP）中的浅沟槽隔离（STI）处理的新浆料，其包含具有磨料的水性介质; 和具有羧基和亲电官能团的化合物。二氧化铈和/或二氧化钛与氨基酸的组合以获得大于5:1的抛光选择性。 CMP用于去除多余的氧化物并使衬底和沟槽平坦化。氮化硅用作停止层，防止下面的硅衬底的抛光。

4. 发明授权

US07091164B2 Slurry for chemical mechanical polishing silicon dioxide 有权
公开(公告)号：US07091164B2
公开(公告)日：2006-08-15
申请号：US10617510
申请日：2003-07-11
申请人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
发明人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
IPC分类号： C09K13/00
CPC分类号： C09G1/02
摘要： A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

5. 发明授权

US06544892B2 Slurry for chemical mechanical polishing silicon dioxide 有权
公开(公告)号：US06544892B2
公开(公告)日：2003-04-08
申请号：US10192815
申请日：2002-07-10
申请人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
发明人： Ramanathan Srinivasan , Suryadevara V. Babu , William G. America , Yie-Shein Her
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad. The aqueous slurry and method of the present invention provide high silicon dioxide to silicon nitride removal rate selectivity over a wide range of pH, which is particularly useful for the fabrication of shallow trench isolation structures on semiconductor devices.

6. 发明授权

US07101800B2 Chemical-mechanical polishing slurry and method 有权
标题翻译：化学机械抛光浆料及方法
公开(公告)号：US07101800B2
公开(公告)日：2006-09-05
申请号：US10749726
申请日：2003-12-30
申请人： Yie-Shein Her , Ramanathan Srinivasan , Suryadevara Babu , Suresh Ramarajan
发明人： Yie-Shein Her , Ramanathan Srinivasan , Suryadevara Babu , Suresh Ramarajan
IPC分类号： H01L21/302
CPC分类号： C09G1/02
摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.
摘要翻译：本发明提供了一种用于在制造镶嵌结构期间去除阻挡层的化学机械抛光浆料。根据本发明的浆料包括抑制去除下面的含硅介电层的速率的试剂。在本发明目前最优选的实施方案中，抑制下面的含硅介电层被除去的速率的试剂是L-赖氨酸和/或L-精氨酸。本发明还提供了一种在镶嵌结构中的阻挡层的化学机械抛光期间抑制下面的含硅介电层的去除速率的方法。根据本发明的方法包括用包含抑制所述下面的含硅介电层被除去的速率的试剂的浆料抛光阻挡层。

7. 发明授权

US06702954B1 Chemical-mechanical polishing slurry and method 有权
标题翻译：化学机械抛光浆料及方法
公开(公告)号：US06702954B1
公开(公告)日：2004-03-09
申请号：US09692730
申请日：2000-10-19
申请人： Yie-Shein Her , Ramanathan Srinivasan , Suryadevara Babu , Suresh Ramarajan
发明人： Yie-Shein Her , Ramanathan Srinivasan , Suryadevara Babu , Suresh Ramarajan
IPC分类号： C09K1300
CPC分类号： C09G1/02
摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.
摘要翻译：本发明提供了一种用于在制造镶嵌结构期间去除阻挡层的化学机械抛光浆料。根据本发明的浆料包括抑制去除下面的含硅介电层的速率的试剂。在本发明目前最优选的实施方案中，抑制下游含硅介电层被去除的速率的试剂是 - 赖氨酸和/或 L - 精氨酸本发明还提供了一种在镶嵌结构中的阻挡层的化学机械抛光期间抑制下面的含硅介电层的去除速率的方法。根据本发明的方法包括用包含抑制所述下面的含硅介电层被除去的速率的试剂的浆料抛光阻挡层。

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