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    • 6. 发明授权
    • Single event upset hardened latch
    • 单个事件镦粗硬化闩锁
    • US07161404B2
    • 2007-01-09
    • US10742436
    • 2003-12-19
    • Peter HazuchaKrishnamurthy Soumyanath
    • Peter HazuchaKrishnamurthy Soumyanath
    • H03K3/289
    • H03K3/356156H03K3/012H03K3/0375H03K3/356173
    • A hardened latch capable of providing protection against single event upsets (SEUs) is disclosed. The hardened latch includes a first latch and a second latch that mirrors a subset of gates of the first latch. The second latch is inserted in the feedback path of the keeper circuit of the first latch and is cross-coupled with the gates of the keeper circuit of the first latch. The latch is hardened against single event upsets and an arbitrary number of successive SEUs attacking a single node, provided that the time between successive SEUs is larger than the recovery time of the latch. An alternate embodiment of the hardened latch includes a split buffer output. This embodiment is capable of reducing the propagation of erroneous transients. Another alternate embodiment of the hardened latch includes a Miller C buffer output. This embodiment is capable of reducing the propagation of erroneous transients below the level achievable in a hardened latch employing a split buffer output.
    • 公开了一种能够提供针对单个事件扰乱(SEU)的保护的硬化锁存器。 硬化的锁存器包括第一锁存器和第二锁存器,其对第一锁存器的门的子集进行镜像。 第二锁存器插入在第一锁存器的保持器电路的反馈路径中,并且与第一锁存器的保持器电路的栅极交叉耦合。 如果连续的SEU之间的时间大于锁存器的恢复时间,则锁存器会针对单个事件扰乱和任意数量的连续的SEU进行加固。 硬化锁存器的替代实施例包括分离缓冲器输出。 该实施例能够减少错误瞬变的传播。 硬化锁存器的另一替代实施例包括米勒C缓冲器输出。 该实施例能够将错误瞬变的传播降低到使用分离缓冲器输出的硬化锁存器中可实现的电平以下。
    • 8. 发明授权
    • Domino circuits with high performance and high noise immunity
    • 具有高性能和高抗噪声能力的多米诺电路
    • US06204696B1
    • 2001-03-20
    • US09158410
    • 1998-09-22
    • Ram K. KrishnamurthyKrishnamurthy Soumyanath
    • Ram K. KrishnamurthyKrishnamurthy Soumyanath
    • H03K19096
    • H03K19/0963
    • In some embodiments, the invention includes a domino circuit having a precharge circuit including a source follower nFET device coupled to a domino stage conductor. An evaluation path circuit is also coupled to the domino stage conductor. A hysteretic output stage receives a signal from the domino stage conductor and provide therefrom an evaluated output signal. In other embodiments, the invention includes a domino circuit having a predischarge circuit coupled to a domino stage conductor. An evaluation path circuit includes source follower nFET devices coupled to the domino stage conductor. A hysteretic output stage receives a signal from the domino stage conductor and provides therefrom an evaluated output signal. In still other embodiments, the invention includes a domino circuit having a precharge circuit including coupled to a domino stage conductor. An evaluation path circuit is coupled to the domino stage conductor. An output stage includes an inverter to receive a signal from the domino stage conductor and to provide an evaluated output signal on an output conductor, the output stage including a duplicate evaluation path circuit coupled to an output conductor.
    • 在一些实施例中,本发明包括具有预充电电路的多米诺骨牌电路,该预充电电路包括耦合到多米诺骨牌导体的源极跟随器nFET器件。 评估路径电路也耦合到多米诺骨牌导体。 迟滞输出级接收来自多米诺骨牌级导体的信号并从其提供评估的输出信号。 在其他实施例中,本发明包括具有耦合到多米诺骨牌导体的预放电电路的多米诺骨牌电路。 评估路径电路包括耦合到多米诺骨牌导体的源极跟随器nFET器件。 滞后输出级接收来自多米诺骨牌级导体的信号并从其提供评估的输出信号。 在其他实施例中,本发明包括具有预充电电路的多米诺骨牌电路,其包括耦合到多米诺骨牌导体。 评估路径电路耦合到多米诺骨牌导体。 输出级包括反相器,用于从多米诺骨架导体接收信号并在输出导体上提供评估输出信号,输出级包括耦合到输出导体的重复评估路径电路。