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1. 发明授权

US06913796B2 Plasma curing process for porous low-k materials 失效
标题翻译：多孔低k材料的等离子体固化工艺
公开(公告)号：US06913796B2
公开(公告)日：2005-07-05
申请号：US09952649
申请日：2001-09-14
申请人： Ralph Albano , Cory Bargeron , Ivan L. Berry, III , Jeff Bremmer , Phil Dembowski , Orlando Escorcia , Qingyuan Han , Nick Sbrockey , Carlo Waldfried
发明人： Ralph Albano , Cory Bargeron , Ivan L. Berry, III , Jeff Bremmer , Phil Dembowski , Orlando Escorcia , Qingyuan Han , Nick Sbrockey , Carlo Waldfried
IPC分类号： C08J9/36 , C01B33/12 , C23C16/56 , H01L21/312 , H01L21/314 , H01L21/316 , H05H1/24 , B05D3/06 , C08F2/52 , C08J7/18
CPC分类号： C01B33/126 , C23C16/56 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/0234 , H01L21/3122 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus and hardness.
摘要翻译：低介电常数多孔材料具有改善的弹性模量和硬度。制造这种多孔材料的过程涉及提供多孔介电材料和等离子体固化多孔介电材料以产生等离子体固化的多孔电介质材料。多孔介电材料的等离子体固化产生具有改善的模量和硬度的材料。弹性模量的改善通常大于或约50％，更典型地大于或约100％，更典型地大于或约200％。硬度的改善通常大于或约50％。等离子体固化的多孔电介质材料可以任选地进行后等离子体处理。与等离子体固化的多孔介电材料相比，等离子体固化的多孔介电材料的后等离子体处理降低了材料的介电常数，同时保持了改进的弹性模量和硬度。后等离子体处理的等离子体固化的多孔介电材料的介电常数在约1.1和约3.5之间，并且具有改善的弹性模量和硬度。

2. 发明授权

US06759098B2 Plasma curing of MSQ-based porous low-k film materials 失效
标题翻译：基于MSQ的多孔低k薄膜材料的等离子体固化
公开(公告)号：US06759098B2
公开(公告)日：2004-07-06
申请号：US09906276
申请日：2001-07-16
申请人： Qingyuan Han , Carlo Waldfried , Orlando Escorcia , Ralph Albano , Ivan L. Berry, III , Jeff Jang , Ian Ball
发明人： Qingyuan Han , Carlo Waldfried , Orlando Escorcia , Ralph Albano , Ivan L. Berry, III , Jeff Jang , Ian Ball
IPC分类号： B05D302
CPC分类号： C01B33/126 , H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/0234 , H01L21/31058 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.
摘要翻译：具有改善弹性模量的低介电常数薄膜材料。制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂分子制备的多孔甲基倍半硅氧烷基介电膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。弹性模量的改善通常大于或约100％，更典型地大于或约200％。等离子体固化的多孔膜材料可以任选地退火。与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。退火的等离子体固化膜的介电常数介于约1.1和约2.4之间，弹性模量提高。

3. 发明授权

US07011868B2 Fluorine-free plasma curing process for porous low-k materials 失效
标题翻译：用于多孔低k材料的无氟等离子体固化工艺
公开(公告)号：US07011868B2
公开(公告)日：2006-03-14
申请号：US10627894
申请日：2003-07-24
申请人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ralph Albano , Ivan L. Berry, III , Atsushi Shiota
发明人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ralph Albano , Ivan L. Berry, III , Atsushi Shiota
IPC分类号： C08J7/18 , H01L21/26 , H01L21/3105 , H01L21/314 , H05L1/24
CPC分类号： H01L21/3105 , C01B33/126 , C23C16/56 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/0234 , H01L21/31116 , H01L21/31138 , H01L21/3124 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR §1.72(b).
摘要翻译：低介电常数多孔材料具有改善的弹性模量和材料硬度。制造这种多孔材料的过程包括提供多孔电介质材料，并用无氟等离子体气体等离子体固化多孔介电材料，以产生无氟等离子体固化的多孔电介质材料。多孔电介质材料的无氟等离子体固化产生具有改善的模量和材料硬度以及相当的介电常数的材料。弹性模量的改善通常大于或约50％，更典型地大于或约100％。材料硬度的改善通常大于或约50％。要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求37 CFR§1.72（b）的范围或含义。

4. 发明授权

US06756085B2 Ultraviolet curing processes for advanced low-k materials 失效
标题翻译：先进的低k材料的紫外线固化工艺
公开(公告)号：US06756085B2
公开(公告)日：2004-06-29
申请号：US10623729
申请日：2003-07-21
申请人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan L. Berry, III
发明人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan L. Berry, III
IPC分类号： C08J704
CPC分类号： C09D183/02 , C09D183/04 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/3121 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.
摘要翻译：低介电常数材料具有改善的弹性模量和材料硬度。制造这种材料的过程包括提供介电材料和紫外线（UV）固化材料以产生UV固化的介电材料。 UV固化产生具有改善的模量和材料硬度的材料。改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行后UV处理。与UV固化的介电材料相比，后UV处理降低了材料的介电常数，同时保持了改进的弹性模量和材料硬度。紫外线固化的电介质可以另外表现出比炉固化过程更低的固化总热量预算。

5. 发明授权

US06558755B2 Plasma curing process for porous silica thin film 失效
标题翻译：多孔二氧化硅薄膜等离子体固化工艺
公开(公告)号：US06558755B2
公开(公告)日：2003-05-06
申请号：US09681332
申请日：2001-03-19
申请人： Ivan L. Berry, III , Todd Bridgewater , Wei Chen , Qingyuan Han , Eric S. Moyer , Michael J. Spaulding , Carlo Waldfried
发明人： Ivan L. Berry, III , Todd Bridgewater , Wei Chen , Qingyuan Han , Eric S. Moyer , Michael J. Spaulding , Carlo Waldfried
IPC分类号： C08J718
CPC分类号： H01L21/02134 , C01B33/126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.
摘要翻译：具有改善的弹性模量的低介电常数膜。制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。成本计算在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。与等离子体固化的多孔网络涂层相比，等离子体固化涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。退火温度通常为或约475℃以下，退火时间通常不超过或约180秒。退火的等离子体固化涂层的介电常数范围为约1.1至约2.4，并具有改善的弹性模量。

6. 发明申请

US20060024976A1 Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics 失效
公开(公告)号：US20060024976A1
公开(公告)日：2006-02-02
申请号：US11146742
申请日：2005-06-07
申请人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan Berry
发明人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan Berry
IPC分类号： H01L21/31 , H01L21/26
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02348 , H01L21/31695 , H01L21/76825 , H01L2221/1047
摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

7. 发明授权

US06630406B2 Plasma ashing process 有权
公开(公告)号：US06630406B2
公开(公告)日：2003-10-07
申请号：US09855177
申请日：2001-05-14
申请人： Carlo Waldfried , Ivan Berry , Orlando Escorcia , Qingyuan Han , Palani Sakthivel
发明人： Carlo Waldfried , Ivan Berry , Orlando Escorcia , Qingyuan Han , Palani Sakthivel
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01J2237/3342 , H01L21/31138
摘要： An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.

8. 发明授权

US07629272B2 Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics 失效
标题翻译：用于形成多孔低k电介质的紫外辅助致孔剂去除和/或固化方法
公开(公告)号：US07629272B2
公开(公告)日：2009-12-08
申请号：US11146742
申请日：2005-06-07
申请人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan Berry, III
发明人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ivan Berry, III
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02348 , H01L21/31695 , H01L21/76825 , H01L2221/1047
摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
摘要翻译：从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

9. 发明授权

US07078161B2 Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication 失效
标题翻译：用于在铁电体器件制造期间去除光致抗蚀剂和残留物的等离子体灰化过程
公开(公告)号：US07078161B2
公开(公告)日：2006-07-18
申请号：US10248707
申请日：2003-02-11
申请人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ebrahim Andideh
发明人： Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ebrahim Andideh
IPC分类号： G03F7/42
CPC分类号： G03F7/427 , H01L21/31122 , H01L21/31138
摘要： A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
摘要翻译：用于与包含铁电材料的基板一起使用的低温等离子体灰化方法。该方法通常包括在约室温至约140℃的温度下等离子体等离子体灰化光致抗蚀剂和残余物，其中等离子体由基本上由氢气和惰性气体组成的气体混合物产生，并且其中铁电材料暴露于等离子体。

10. 发明授权

US06951823B2 Plasma ashing process 有权
标题翻译：等离子体灰化过程
公开(公告)号：US06951823B2
公开(公告)日：2005-10-04
申请号：US10638570
申请日：2003-08-11
申请人： Carlo Waldfried , Orlando Escorcia , Qingyuan Han , Thomas Buckley , Palani Sakthivel
发明人： Carlo Waldfried , Orlando Escorcia , Qingyuan Han , Thomas Buckley , Palani Sakthivel
IPC分类号： G03F7/42 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02071 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
摘要翻译：在半导体衬底存在低k材料的情况下，基本上无氧的无氮等离子体灰化处理用于去除光致抗蚀剂包括通过将等离子体气体组合物暴露于能量源形成等离子体来形成反应性物质。等离子体气体组成基本上不含氧气和含氮气体。通过将光致抗蚀剂暴露于基本上无氧和无氮的反应性物质，等离子体通过含有低k材料的下面的基底选择性地除去光致抗蚀剂。该方法可与含碳低k电介质材料一起使用。

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