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1. 发明授权

US06558755B2 Plasma curing process for porous silica thin film 失效
标题翻译：多孔二氧化硅薄膜等离子体固化工艺
公开(公告)号：US06558755B2
公开(公告)日：2003-05-06
申请号：US09681332
申请日：2001-03-19
申请人： Ivan L. Berry, III , Todd Bridgewater , Wei Chen , Qingyuan Han , Eric S. Moyer , Michael J. Spaulding , Carlo Waldfried
发明人： Ivan L. Berry, III , Todd Bridgewater , Wei Chen , Qingyuan Han , Eric S. Moyer , Michael J. Spaulding , Carlo Waldfried
IPC分类号： C08J718
CPC分类号： H01L21/02134 , C01B33/126 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.
摘要翻译：具有改善的弹性模量的低介电常数膜。制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。成本计算在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。与等离子体固化的多孔网络涂层相比，等离子体固化涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。退火温度通常为或约475℃以下，退火时间通常不超过或约180秒。退火的等离子体固化涂层的介电常数范围为约1.1至约2.4，并具有改善的弹性模量。

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