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1. 发明申请

US20080099781A1 Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same 审中-公开
标题翻译：制造III族氮化物半导体薄膜的方法及使用该III族氮化物半导体薄膜的III族氮化物半导体器件的制造方法
公开(公告)号：US20080099781A1
公开(公告)日：2008-05-01
申请号：US11898955
申请日：2007-09-18
申请人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
发明人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.
摘要翻译：一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

2. 发明申请

US20110300652A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20110300652A1
公开(公告)日：2011-12-08
申请号：US13211107
申请日：2011-08-16
申请人： Seong Eun Park , Bang Won OH , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
发明人： Seong Eun Park , Bang Won OH , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
IPC分类号： H01L33/60
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化物半导体发光器件及其制造方法。所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

3. 发明申请

US20080078986A1 Nitride semiconductor light emitting device and manufacturing method of the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20080078986A1
公开(公告)日：2008-04-03
申请号：US11902396
申请日：2007-09-21
申请人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
发明人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化物半导体发光器件及其制造方法。所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

4. 发明授权

US08664687B2 Nitride semiconductor light-emitting device and process for producing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08664687B2
公开(公告)日：2014-03-04
申请号：US10898204
申请日：2004-07-26
申请人： Dong Hyun Cho , Masayoshi Koike , Yuiji Imai , Min Ho Kim , Bang Won Oh , Hun Joo Hahm
发明人： Dong Hyun Cho , Masayoshi Koike , Yuiji Imai , Min Ho Kim , Bang Won Oh , Hun Joo Hahm
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
摘要翻译：提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

5. 发明申请

US20090045392A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090045392A1
公开(公告)日：2009-02-19
申请号：US11907169
申请日：2007-10-10
申请人： Seong Eun Park , Min Ho Kim , Jae Woong Han
发明人： Seong Eun Park , Min Ho Kim , Jae Woong Han
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/3416 , H01S5/34333
摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
摘要翻译：提供了包括超晶格结构的有源层的氮化物半导体器件。氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。氮化物半导体层。

6. 发明授权

US08008647B2 Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps 有权
标题翻译：具有超晶格有源层的氮化物半导体器件包括具有不同能带隙的势垒层
公开(公告)号：US08008647B2
公开(公告)日：2011-08-30
申请号：US11907169
申请日：2007-10-10
申请人： Seong Eun Park , Min Ho Kim , Jae Woong Han
发明人： Seong Eun Park , Min Ho Kim , Jae Woong Han
IPC分类号： H01L33/06 , H01L33/32 , H01L31/00 , H01L31/0248
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/3416 , H01S5/34333
摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
摘要翻译：提供了包括超晶格结构的有源层的氮化物半导体器件。氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。氮化物半导体层。

7. 发明公开

US20230159127A1 Bicycle 审中-公开
公开(公告)号：US20230159127A1
公开(公告)日：2023-05-25
申请号：US17916887
申请日：2021-06-18
申请人： Min Ho Kim , Sang Gil Kim
发明人： Min Ho Kim , Sang Gil Kim
IPC分类号： B62K3/00 , B62K3/04 , B62M1/38 , B62J17/083
CPC分类号： B62K3/005 , B62K3/04 , B62M1/38 , B62J17/083
摘要： The present invention allows a user to ride a bicycle while lying with his/her face down, thereby lowering the center of weight and improving the driving stability, increasing the velocity by reducing the air resistance during driving, and increasing the generation of thrust by easily transferring the force of the user to pedals, and comprises: a frame provided with a front wheel and a rear wheel such that the user can ride while lying with his/her face down; and an acceleration means installed on the rear wheel and generating power and acceleration according to pedaling.

8. 发明授权

US09330610B2 Liquid crystal display device including a backlight unit employing a light source and method for driving the same 有权
标题翻译：包括使用光源的背光单元的液晶显示装置及其驱动方法
公开(公告)号：US09330610B2
公开(公告)日：2016-05-03
申请号：US13380708
申请日：2010-04-30
申请人： Jung Nam An , Min Ho Kim , Chan Sung Jeong , Seung Se Kim , Hoon Hur , Won Do Kee
发明人： Jung Nam An , Min Ho Kim , Chan Sung Jeong , Seung Se Kim , Hoon Hur , Won Do Kee
IPC分类号： G09G3/36 , G09G3/34
CPC分类号： G09G3/3426 , G09G3/3611 , G09G2320/0233 , G09G2320/0606 , G09G2320/0626 , G09G2320/0646 , G09G2360/16
摘要： The present invention relates to a liquid crystal display device in which the light sources of a backlight unit are independently driven as a plurality of separate regions, and to a drive method for the same. In situations where there is a substantial variation in the brightness (luminance) of regions being displayed on the liquid crystal display device, the present invention can improve the visibility of boundaries due to differences in luminance in images displayed within the regions of the backlight unit emitting light at different levels of luminance as a result.
摘要翻译：本发明涉及一种液晶显示装置，其中背光单元的光源被独立地驱动为多个分开的区域，以及其驱动方法。在显示在液晶显示装置上的区域的亮度（亮度）存在实质变化的情况下，本发明可以提高由背光单元发射的区域内显示的图像的亮度差异引起的边界的可视性结果导致亮度不同的光。

9. 发明申请

US20160028977A1 CMOS IMAGE SENSORS WITH PHOTOGATE STRUCTURES AND SENSING TRANSISTORS, OPERATION METHODS THEREOF, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME 有权
标题翻译：具有光学结构和感测晶体管的CMOS图像传感器，其操作方法和包括其的图像处理系统
公开(公告)号：US20160028977A1
公开(公告)日：2016-01-28
申请号：US14877539
申请日：2015-10-07
申请人： Young Gu JIN , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
发明人： Young Gu JIN , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
IPC分类号： H04N5/363 , H04N5/378 , H04N5/374 , H01L27/146
CPC分类号： H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.
摘要翻译： ACMOS图像传感器包括具有多个像素的像素阵列。所述多个像素中的每一个包括：被配置为基于第一栅极电压来控制的光栅结构; 以及感测晶体管，其包括形成在衬底区域中的电荷袋区域，所述感测晶体管被配置为基于第二栅极电压来控制。基于第一栅极电压，光栅结构被配置为集成响应于入射在衬底区域上的光而产生的电荷。感测晶体管被配置为根据第一栅极电压和第二栅极电压之间的差异，根据从光栅结构传输到电荷袋区域的电荷来调节感测晶体管的阈值电压和感测晶体管中的电流的至少一个第二栅极电压。

10. 发明授权

US08571827B2 Smart footwear and operating method thereof 有权
标题翻译：智能鞋及其操作方法
公开(公告)号：US08571827B2
公开(公告)日：2013-10-29
申请号：US12963575
申请日：2010-12-08
申请人： Jae Won Jang , Sa Kwang Song , Ho Youl Jung , Min Ho Kim , Soo Jun Park , Seon Hee Park
发明人： Jae Won Jang , Sa Kwang Song , Ho Youl Jung , Min Ho Kim , Soo Jun Park , Seon Hee Park
IPC分类号： G01P15/00 , G08B21/00 , A61B5/103 , G01S1/00
CPC分类号： G01S19/14 , A43B3/0005 , A61B5/002 , A61B5/1112 , A61B5/1123 , A61B5/6807 , A61B2562/0219 , A61B2562/0247 , A61B2562/046
摘要： Smart footwear includes: a film type insole sensor measuring a change of force applied by a user's foot, as a resistance value; an acceleration sensor measuring an acceleration value according to a change in the motion of the user's foot; and a microcontroller estimating the user's current condition and the quantity of motion based on the resistance value and the acceleration value, and generating user condition information and quantity of motion information.
摘要翻译：智能鞋类包括：测量用户脚施加的力的变化的胶片型鞋垫传感器作为电阻值; 加速度传感器，根据使用者脚的运动变化来测量加速度值; 以及微控制器，基于电阻值和加速度值估计用户的当前状态和运动量，并且生成用户状态信息和运动信息量。

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