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1. 发明授权

US08262847B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08262847B2
公开(公告)日：2012-09-11
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

2. 发明授权

US08911637B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08911637B2
公开(公告)日：2014-12-16
申请号：US13592262
申请日：2012-08-22
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

3. 发明申请

US20120312475A1 APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMA 有权
标题翻译：用于处理使用等离子体的基板的装置
公开(公告)号：US20120312475A1
公开(公告)日：2012-12-13
申请号：US13526391
申请日：2012-06-18
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , G03F7/427 , H01J37/32091 , H01J37/32128 , H01J37/32165 , H01J37/32532 , H01L21/306 , H01L21/31138
摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.
摘要翻译：提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给上电极。

4. 发明申请

US20080160776A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体增强基板加工方法和装置
公开(公告)号：US20080160776A1
公开(公告)日：2008-07-03
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov
IPC分类号： H01L21/461
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

5. 发明申请

US20120312780A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体增强基板加工方法和装置
公开(公告)号：US20120312780A1
公开(公告)日：2012-12-13
申请号：US13592262
申请日：2012-08-22
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H05H1/46 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency, A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%, The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率，第二RF信号的A相从第一RF信号的相位偏移小于10％的值。该方法还包括处理衬底，而第二RF信号被提供给上电极。

6. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

7. 发明授权

US08898889B2 Chuck assembly for plasma processing 有权
标题翻译：用于等离子体处理的卡盘组件
公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

8. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

9. 发明申请

US20130240482A1 METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：在等离子体处理系统中选择性地修改射频电流的方法和装置
公开(公告)号：US20130240482A1
公开(公告)日：2013-09-19
申请号：US13423281
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： C23F1/08 , G01N33/00
CPC分类号： H01J37/32935 , C23C16/4585 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32697 , H01J37/32715 , H01J37/3299 , H01J2237/327 , H01J2237/3343
摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
摘要翻译：公开了用于修改RF电流路径长度的方法和装置。装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

10. 发明授权

US08485128B2 Movable ground ring for a plasma processing chamber 有权
标题翻译：用于等离子体处理室的可动接地环
公开(公告)号：US08485128B2
公开(公告)日：2013-07-16
申请号：US12828120
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： H01L21/3065 , C23F1/08 , C23C14/34 , C23C16/00
CPC分类号： H01L21/6719 , H01J37/32 , H01J37/32091 , H01J37/32568 , H01J37/32642 , H01L21/68735 , H01L21/68785
摘要： A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasma processing chamber wherein a semiconductor substrate supported in the substrate support assembly undergoes plasma processing.
摘要翻译：描述了可动基板支撑组件的可动接地环。可移动接地环被配置为围绕并提供到可移动衬底支撑组件的固定接地环的RF返回路径，其中可调节间隙电容耦合等离子体处理室，其中支撑在衬底支撑组件中的半导体衬底经历等离子体处理。

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