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1. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

2. 发明申请

US20130126475A1 TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS 有权
标题翻译：三重反应器设计与多种无线电功能
公开(公告)号：US20130126475A1
公开(公告)日：2013-05-23
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H05H1/24 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

3. 发明申请

US20130126476A1 DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 有权
标题翻译：上电极双区温度控制
公开(公告)号：US20130126476A1
公开(公告)日：2013-05-23
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

4. 发明授权

US10622195B2 Multi zone gas injection upper electrode system 有权
公开(公告)号：US10622195B2
公开(公告)日：2020-04-14
申请号：US13438473
申请日：2012-04-03
申请人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
IPC分类号： B23K9/00 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

5. 发明申请

US20130126486A1 Multi Zone Gas Injection Upper Electrode System 审中-公开
标题翻译：多区域注气上电极系统
公开(公告)号：US20130126486A1
公开(公告)日：2013-05-23
申请号：US13438473
申请日：2012-04-03
申请人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
IPC分类号： B23K9/00
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译：等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。

6. 发明授权

US09263240B2 Dual zone temperature control of upper electrodes 有权
标题翻译：上电极双区温度控制
公开(公告)号：US09263240B2
公开(公告)日：2016-02-16
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la Llera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la Llera
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

7. 发明申请

US20130122711A1 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：US20130122711A1
公开(公告)日：2013-05-16
申请号：US13294053
申请日：2011-11-10
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

8. 发明申请

US20130023064A1 Negative Ion Control for Dielectric Etch 有权
标题翻译：介质蚀刻负离子控制
公开(公告)号：US20130023064A1
公开(公告)日：2013-01-24
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

9. 发明申请

US20130059448A1 Pulsed Plasma Chamber in Dual Chamber Configuration 审中-公开
标题翻译：脉冲等离子室双腔配置
公开(公告)号：US20130059448A1
公开(公告)日：2013-03-07
申请号：US13227404
申请日：2011-09-07
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/306 , C23F1/08
摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.
摘要翻译：提供了用于在脉冲等离子体室中处理衬底的实施例。具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击在ON期间的底部等离子体。

10. 发明授权

US09117767B2 Negative ion control for dielectric etch 有权
标题翻译：负离子控制电介质蚀刻
公开(公告)号：US09117767B2
公开(公告)日：2015-08-25
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01J37/02 , H01J37/32 , C23C14/34 , C23C16/505 , H01L21/311 , H01L21/67 , H05H1/46
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

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