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1. 发明授权

US08500952B2 Plasma confinement rings having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环
公开(公告)号：US08500952B2
公开(公告)日：2013-08-06
申请号：US13585570
申请日：2012-08-14
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： C23C16/00 , C23C16/509 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

2. 发明授权

US08262922B2 Plasma confinement rings having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环
公开(公告)号：US08262922B2
公开(公告)日：2012-09-11
申请号：US12230236
申请日：2008-08-26
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/302
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

3. 发明申请

US20120325407A1 PLASMA CONFINEMENT RINGS HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS 有权
标题翻译：具有降低聚合物沉积特性的等离子体约束环
公开(公告)号：US20120325407A1
公开(公告)日：2012-12-27
申请号：US13585570
申请日：2012-08-14
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： C23F1/08
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

4. 发明申请

US20080318433A1 Plasma confinement rings assemblies having reduced polymer deposition characteristics 有权
标题翻译：等离子体约束环组件具有降低的聚合物沉积特性
公开(公告)号：US20080318433A1
公开(公告)日：2008-12-25
申请号：US12230236
申请日：2008-08-26
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

5. 发明授权

US07430986B2 Plasma confinement ring assemblies having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环组件
公开(公告)号：US07430986B2
公开(公告)日：2008-10-07
申请号：US11083241
申请日：2005-03-18
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/306 , H01L21/302 , C23C16/00 , C23C16/509
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

6. 再颁专利

USRE38097E1 Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports 有权
标题翻译：具有等离子体室的化学气相沉积系统具有分离的工艺气体和清洁气体注入口
公开(公告)号：USRE38097E1
公开(公告)日：2003-04-29
申请号：US09989106
申请日：2001-11-21
申请人： David Trussell , C. Robert Koemtzopoulos , Felix Kozakevich
发明人： David Trussell , C. Robert Koemtzopoulos , Felix Kozakevich
IPC分类号： B08B9100
CPC分类号： C23C16/45563 , C23C16/4405 , H01J37/32192 , H01J37/32862
摘要： A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
摘要翻译：一种用于本体清洁腔室的方法和装置，其中工艺气体通过气体注入口注入到腔室中。提供了将过程气体和清洁气体注入室中的独立气体注入口。将处理气体通过第一气体注入口注入到诸如等离子体室的室中，同时清洁在沉积过程中由工艺气体留下的残余物的清洁气体通过第二气体注射注入到室中端口，其与注入工艺气体的第一气体注入口分离。气体喷射端口的分离为处理气体和室内部的喷射螺杆端口提供均衡的压力。这允许喷射螺杆端口被最大限度地清洁并且降低了腔室中的喷射螺杆端口的更换频率。

7. 发明授权

US5911833A Method of in-situ cleaning of a chuck within a plasma chamber 失效
标题翻译：在等离子体室内原位清洁卡盘的方法
公开(公告)号：US5911833A
公开(公告)日：1999-06-15
申请号：US784852
申请日：1997-01-15
申请人： Dean Denison , William Harshbarger , Anwar Husain , C. Robert Koemtzopoulos , Felix Kozakevich , David Trussell
发明人： Dean Denison , William Harshbarger , Anwar Husain , C. Robert Koemtzopoulos , Felix Kozakevich , David Trussell
IPC分类号： B08B7/00 , C23C16/44 , H01L21/00 , H01Q1/36 , B44C1/22
CPC分类号： H01L21/67017 , B08B7/0035 , C23C16/4405 , H01J37/32862 , H01Q1/366 , Y10S438/905
摘要： A method for in-situ cleaning of a chuck that bears a semiconductor wafer in a semiconductor manufacturing machine maintains a processing chamber in a sealed condition with the chuck inside the chamber. A wafer bearing surface of the chuck is exposed upon determining that the chuck requires a cleaning. A cleaning gas is then injected into the chamber and RF power is applied to the chamber to create a plasma that cleans the wafer bearing surface. Since the processing chamber is maintained in a sealed condition during the in-situ cleaning of the chuck, the time required to clean the chuck and prepare the chamber for continued production runs is greatly reduced.
摘要翻译：用于在半导体制造机器中承载半导体晶片的卡盘的原位清洁方法将处理室保持在室内的卡盘的密封状态。确定卡盘需要清洁时，卡盘的晶片承载表面露出。然后将清洁气体注入到室中，并且将RF功率施加到室以产生清洁晶片承载表面的等离子体。由于在卡盘的原位清洁期间处理室保持密封状态，因此大大减少了清洁卡盘所需的时间并且准备用于继续生产的运行的室。

8. 发明授权

US5988187A Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports 失效
公开(公告)号：US5988187A
公开(公告)日：1999-11-23
申请号：US679356
申请日：1996-07-09
申请人： David Trussell , C. Robert Koemtzopoulos , Felix Kozakevich
发明人： David Trussell , C. Robert Koemtzopoulos , Felix Kozakevich
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/304 , B08B9/00 , A45B25/00 , A45B25/12 , A45B25/14
CPC分类号： C23C16/45563 , C23C16/4405 , H01J37/32192 , H01J37/32862
摘要： A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.

9. 发明申请

US20110067814A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MULTI-PART ELECTRODE 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的部分的方法
公开(公告)号：US20110067814A1
公开(公告)日：2011-03-24
申请号：US12954060
申请日：2010-11-24
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： H01L21/3065
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

10. 发明授权

US08573153B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
公开(公告)号：US08573153B2
公开(公告)日：2013-11-05
申请号：US12954060
申请日：2010-11-24
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

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