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1. 发明授权

US09146157B1 Dual band SWIR/MWIR and MWIR1/MWIR2 infrared detectors 有权
标题翻译：双频SWIR / MWIR和MWIR1 / MWIR2红外探测器
公开(公告)号：US09146157B1
公开(公告)日：2015-09-29
申请号：US13427387
申请日：2012-03-22
申请人： Rajesh Rajavel , Hasan Sharifi , Terence De Lyon , Brett Nosho , Daniel Yap
发明人： Rajesh Rajavel , Hasan Sharifi , Terence De Lyon , Brett Nosho , Daniel Yap
IPC分类号： G01J5/20 , G01J3/36 , H01L27/146
CPC分类号： G01J3/36 , H01L27/14649 , H01L27/14652
摘要： A dual band detector includes a substrate, a composite barrier, a first absorber on the substrate and on a light incident side of the composite barrier, the first absorber for detecting first infrared light wavelengths, a second absorber on the composite barrier on a side opposite the light incident side, the second absorber for detecting second infrared light wavelengths, wherein a bandgap of the first absorber is larger than that of the second absorber, wherein the composite barrier includes a first secondary barrier, a primary barrier, and a second secondary barrier, wherein the first and second secondary barriers may have a lower bandgap energy than the primary barrier, wherein the first or the second secondary barrier may have a doping level and type different from that of the primary barrier, and wherein at least the primary barrier blocks majority carriers and allows minority carrier flow.
摘要翻译：双波段检测器包括基底，复合屏障，基底上的第一吸收体和复合屏障的光入射侧，用于检测第一红外光波长的第一吸收体，复合势垒上相反一侧的第二吸收体光入射侧，用于检测第二红外光波长的第二吸收体，其中所述第一吸收体的带隙大于所述第二吸收体的带隙，其中所述复合势垒包括第一次级阻挡层，主阻挡层和第二次级阻挡层，其中所述第一和第二次级阻挡层可具有比所述主阻挡层更低的带隙能量，其中所述第一或第二次级阻挡层可具有不同于所述主阻挡层的掺杂水平和类型，并且其中至少所述主阻挡块多数承运人并允许少数载体流动。

2. 发明授权

US08193611B1 High performance InAs-based devices 失效
标题翻译：高性能基于InAs的设备
公开(公告)号：US08193611B1
公开(公告)日：2012-06-05
申请号：US11641917
申请日：2006-12-19
申请人： Rajesh Rajavel , Ken Elliott , David Chow
发明人： Rajesh Rajavel , Ken Elliott , David Chow
IPC分类号： H01L29/22
CPC分类号： H01L29/201 , H01L29/66462 , H01L29/7783
摘要： Material layer structures that have high mobility, a high conduction band barrier and materials that can be implanted to enable higher performance FET device. The structures contain a quantum well layer disposed between two barriers and disposed above a buffer layer and a substrate.
摘要翻译：具有高迁移率，高导带势垒的材料层结构和可植入的材料以实现更高性能的FET器件。这些结构包含设置在两个阻挡层之间并设置在缓冲层和基底之上的量子阱层。

3. 发明申请

US20050029625A1 Method and apparatus for allowing formation of self-aligned base contacts 失效
标题翻译：允许形成自对准基底触点的方法和装置
公开(公告)号：US20050029625A1
公开(公告)日：2005-02-10
申请号：US10778525
申请日：2004-02-12
申请人： Tahir Hussain , Rajesh Rajavel , Mary Montes
发明人： Tahir Hussain , Rajesh Rajavel , Mary Montes
IPC分类号： H01L21/331 , H01L29/417 , H01L29/737 , H01L27/082
CPC分类号： H01L29/66318 , H01L29/41708 , H01L29/7371
摘要： A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
摘要翻译：不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

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