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    • 9. 发明授权
    • Electronic device and methods for fabricating an electronic device
    • 用于制造电子设备的电子设备和方法
    • US07405424B2
    • 2008-07-29
    • US11071305
    • 2005-03-04
    • Michael L. ChabinycAlberto SalleoWilliam S. Wong
    • Michael L. ChabinycAlberto SalleoWilliam S. Wong
    • H01L29/04H01L31/20
    • H01L51/0545H01L29/41733H01L51/0021H01L51/057
    • An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the first electrical contact, exposing the first and second electrical contact, the dielectric layer and a first portion of the electrically insulating layer to radiation from the side of the first electrical contact, removing a second portion of the electrically insulating layer that was not irradiated by the radiation, providing a semiconductor material over a portion of the dielectric layer, and forming at least a third electrical contact over at least a portion of the electrically insulting layer and the semiconductor material.
    • 电子器件和制造该电子器件的方法包括形成第一电接触,电介质层和第二电接触,其中电介质层位于第一和第二电接触之间,在介电层上形成电绝缘层 和所述第一电接触,使所述第一和第二电接触,所述电介质层和所述电绝缘层的第一部分暴露于从所述第一电接触侧的辐射,除去未被照射的所述电绝缘层的第二部分 通过辐射,在电介质层的一部分上提供半导体材料,并且在电绝缘层和半导体材料的至少一部分上形成至少第三电接触。