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1. 发明授权

US08456341B2 Three-level digital-to-analog converter 有权
标题翻译：三电平数模转换器
公开(公告)号：US08456341B2
公开(公告)日：2013-06-04
申请号：US13134301
申请日：2011-06-03
申请人： Rahmi Hezar , Baher Haroun , Halil Kiper , Mounir Fares , Ajay Kumar
发明人： Rahmi Hezar , Baher Haroun , Halil Kiper , Mounir Fares , Ajay Kumar
IPC分类号： H03M1/66
CPC分类号： H03M1/66 , H03M1/747 , H03M3/464
摘要： A system for processing a signal includes a detector configured to detect a two-level stream of bits; a converter configured to generate a three-level control signal based on two adjacent values within the two-level stream of bits; and a switch configured to determine which of three different paths to couple a current source to based on a value of the three-level control signal. Thus, based on adjacent values of the output stream a three-level control signal is generated which controls coupling of the current source to one of three different paths. This type of three-level digital-to-analog converter can be, for example, part of the feedback loop of an analog-to-digital converter. Similar techniques can also be utilized in a multi-segment digital-to-analog converter in which each segment of the DAC is controlled by a 3-level control signal and the DAC is implement using PMOS devices. The current source for each DAC segment is diverted to ground, the M-node, or the P-node depending on the value of the 3-level control signal.
摘要翻译：一种用于处理信号的系统包括：检测器，被配置为检测两级比特流; 转换器，被配置为基于所述两级比特流内的两个相邻值生成三电平控制信号; 以及开关，被配置为基于三电平控制信号的值来确定三个不同路径中的哪一个耦合电流源。因此，基于输出流的相邻值，生成三电平控制信号，其控制电流源与三个不同路径之一的耦合。这种类型的三电平数模转换器可以是例如模数转换器的反馈回路的一部分。类似技术也可以用在多段数模转换器中，其中DAC的每个段由3电平控制信号控制，并且使用PMOS器件来实现DAC。每个DAC段的电流源根据3电平控制信号的值转移到地，M节点或P节点。

2. 发明申请

US20120306678A1 Three-level digital-to-analog converter 有权
标题翻译：三电平数模转换器
公开(公告)号：US20120306678A1
公开(公告)日：2012-12-06
申请号：US13134301
申请日：2011-06-03
申请人： Rahmi Hezar , Baher Haroun , Halil Kiper , Mounir Fares , Ajay Kumar
发明人： Rahmi Hezar , Baher Haroun , Halil Kiper , Mounir Fares , Ajay Kumar
IPC分类号： H03M1/72
CPC分类号： H03M1/66 , H03M1/747 , H03M3/464
摘要： A system for processing a signal includes a detector configured to detect a two-level stream of bits; a converter configured to generate a three-level control signal based on two adjacent values within the two-level stream of bits; and a switch configured to determine which of three different paths to couple a current source to based on a value of the three-level control signal. Thus, based on adjacent values of the output stream a three-level control signal is generated which controls coupling of the current source to one of three different paths. This type of three-level digital-to-analog converter can be, for example, part of the feedback loop of an analog-to-digital converter. Similar techniques can also be utilized in a multi-segment digital-to-analog converter in which each segment of the DAC is controlled by a 3-level control signal and the DAC is implement using PMOS devices. The current source for each DAC segment is diverted to ground, the M-node, or the P-node depending on the value of the 3-level control signal.
摘要翻译：一种用于处理信号的系统包括：检测器，被配置为检测两级比特流; 转换器，被配置为基于所述两级比特流内的两个相邻值生成三电平控制信号; 以及开关，被配置为基于三电平控制信号的值来确定三个不同路径中的哪一个耦合电流源。因此，基于输出流的相邻值，生成三电平控制信号，其控制电流源与三个不同路径之一的耦合。这种类型的三电平数模转换器可以是例如模数转换器的反馈回路的一部分。类似的技术也可以用在多段数模转换器中，其中DAC的每个段由3电平控制信号控制，并且使用PMOS器件实现DAC。每个DAC段的电流源根据3电平控制信号的值转移到地，M节点或P节点。

3. 发明授权

US07789918B2 Lubricity improving additive composition for low sulfur diesel fuel 有权
标题翻译：润滑改善低硫柴油燃料添加剂组成
公开(公告)号：US07789918B2
公开(公告)日：2010-09-07
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18 , C10L1/32 , C10M169/04
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

4. 发明申请

US20080098642A1 Lubricity Improving Additive Composition for Low Sulfur Diesel Fuel 有权
标题翻译：改善低硫柴油燃料添加剂组成的润滑性
公开(公告)号：US20080098642A1
公开(公告)日：2008-05-01
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

5. 发明申请

US20170342086A1 Compounds and methods for the treatment of drug resistance in cancer cells against paclitaxel 审中-公开
公开(公告)号：US20170342086A1
公开(公告)日：2017-11-30
申请号：US15013616
申请日：2016-02-02
申请人： Ajay Kumar
发明人： Ajay Kumar
IPC分类号： C07D491/153 , G01N21/65 , A61K31/337 , G01N33/574 , A61K31/4741
CPC分类号： C07D491/153 , A61K31/337 , A61K31/4741 , A61K45/06 , G01N21/658 , G01N33/57496 , G01N2333/47 , G01N2333/914 , A61K2300/00
摘要： The disclosure provides compounds and methods for treating cancer by inhibiting the formation of cancer cells resistant to paclitaxel by preventing the formation of GBP1:PIM1 protein interaction during a chemotherapeutic treatment. These compounds and methods are able to treat cancer individually or in conjunction with paclitaxel.

6. 发明申请

US20160365283A1 ETCH-RESISTANT WATER SOLUBLE MASK FOR HYBRID WAFER DICING USING LASER SCRIBING AND PLASMA ETCH 有权
标题翻译：使用激光切割和等离子体蚀刻的混合波浪蚀刻防蚀水溶性掩模
公开(公告)号：US20160365283A1
公开(公告)日：2016-12-15
申请号：US14738389
申请日：2015-06-12
申请人： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/3065 , H01L21/268
CPC分类号： H01L21/82 , H01J37/32889 , H01J37/32899 , H01J2237/334 , H01J2237/335 , H01L21/02057 , H01L21/02076 , H01L21/3065 , H01L21/3081 , H01L21/3086 , H01L21/31105 , H01L21/31127 , H01L21/32131 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个实例中，对包括多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成水溶性掩模，所述水溶性掩模覆盖并保护集成电路。该方法还包括烘烤水溶性面罩以增加水溶性面膜的耐蚀刻性。该方法还包括在烘焙水溶性掩模之后，用激光划线工艺图案化水溶性掩模，以提供具有间隙的水溶性图案化掩模，暴露集成电路之间的半导体晶片的区域。该方法还包括通过水溶性图案化掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。

7. 发明申请

US20160315009A1 UV-CURE PRE-TREATMENT OF CARRIER FILM FOR WAFER DICING USING HYBRID LASER SCRIBING AND PLASMA ETCH APPROACH 有权
标题翻译：使用混合激光扫描和等离子体蚀刻方法进行波长涂覆的载体膜的UV固化预处理
公开(公告)号：US20160315009A1
公开(公告)日：2016-10-27
申请号：US14697391
申请日：2015-04-27
申请人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Jungrae Park , Ajay Kumar , James S. Papanu , Prabhat Kumar
IPC分类号： H01L21/78 , H01L21/683 , H01L21/268 , H01L21/67 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/3086 , H01L21/67069 , H01L21/67207 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，在半导体晶片的正面上切割具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附在基板载体的切割带上。在将半导体晶片粘附在切割带上之后，用UV固化工艺处理切割带。在通过UV固化处理处理切割带之后，在半导体晶片的前侧形成切割掩模，该切割掩模覆盖并保护集成电路。用激光刻划工艺对切割掩模进行图案化，以在切割掩模之间提供间隙，在半导体晶片的间隙暴露在集成电路之间。通过切割掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

8. 发明申请

US20160086852A1 PROXIMITY CONTACT COVER RING FOR PLASMA DICING 审中-公开
标题翻译：用于等离子体定位的接头盖
公开(公告)号：US20160086852A1
公开(公告)日：2016-03-24
申请号：US14491856
申请日：2014-09-19
申请人： James M. Holden , Alexander N. Lerner , Ajay Kumar , Aparna Iyer , Alan Hiroshi Ouye
发明人： James M. Holden , Alexander N. Lerner , Ajay Kumar , Aparna Iyer , Alan Hiroshi Ouye
IPC分类号： H01L21/78 , H01J37/32 , H01L21/67 , H01L21/683 , H01L21/3065 , H01L21/308
摘要： Methods of and carriers for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a cover ring for protecting a carrier and substrate assembly during an etch process includes an inner opening having a diameter smaller than the diameter of a substrate of the carrier and substrate assembly. An outer frame surrounds the inner opening. The outer frame has a bevel for accommodating an outermost portion of the substrate of the carrier and substrate assembly.
摘要翻译：描述了半导体晶片切割的方法和载体，每个晶片具有多个集成电路。在一个示例中，用于在蚀刻工艺期间保护载体和基底组件的盖环包括直径小于载体和基底组件的基底的直径的内部开口。外框围绕内开口。外框架具有用于容纳载体和基底组件的基底的最外部分的斜面。

9. 发明授权

US09196536B1 Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process 有权
标题翻译：使用相位调制激光束轮廓激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
公开(公告)号：US09196536B1
公开(公告)日：2015-11-24
申请号：US14497027
申请日：2014-09-25
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/78 , H01L21/3065 , H01L21/67 , H01J37/32 , B23K26/40 , B23K26/36
CPC分类号： H01L21/3065 , H01J37/32 , H01J37/32889 , H01J37/32899 , H01J37/32926 , H01J2237/2487 , H01J2237/334 , H01J2237/3341 , H01J2237/335 , H01L21/02057 , H01L21/30655 , H01L21/3081 , H01L21/67069 , H01L21/67092 , H01L21/67115 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a phase modulated laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用相位调制的激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

10. 发明申请

US20150311118A1 DICING TAPE PROTECTION FOR WAFER DICING USING LASER SCRIBE PROCESS 有权
标题翻译：使用激光扫描工艺制造的波纹贴片保护
公开(公告)号：US20150311118A1
公开(公告)日：2015-10-29
申请号：US14272101
申请日：2014-05-07
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/683
CPC分类号： H01L21/78 , H01L21/67092 , H01L21/6836 , H01L2221/68327 , H01L2221/68377
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，划片具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附到包括安装在载带上方的带框架的基板载体的载带的内部。该方法还包括将保护框架覆盖在半导体晶片的前侧上方并且在载带的暴露的外部部分上方，保护框架具有暴露半导体晶片的前侧的内部区域的开口。该方法还包括用保护框架将半导体晶片的前侧激光划片就位。

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