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1. 发明授权

US07976745B2 Process for the preparation of a composite polymeric material 有权
标题翻译：制备复合聚合材料的方法
公开(公告)号：US07976745B2
公开(公告)日：2011-07-12
申请号：US11267955
申请日：2005-11-04
申请人： Raffaele Vecchione , Gianfranco Carotenuto , Valeria Casuscelli , Floriana Esposito , Salvatore Leonardi , Luigi Nicolais , Maria Viviana Volpe
发明人： Raffaele Vecchione , Gianfranco Carotenuto , Valeria Casuscelli , Floriana Esposito , Salvatore Leonardi , Luigi Nicolais , Maria Viviana Volpe
IPC分类号： C01B31/00
CPC分类号： D01F1/10 , C08K5/0091 , C08L21/00 , Y10T428/249924
摘要： The present invention relates to a process for the preparation of a composite polymeric material containing nanometric inorganic inclusions comprising the steps of: mixing a polymer with a thermolytic precursor to provide a homogeneous dispersion of said at least one precursor and of said at least one polymer; subjecting said homogeneous dispersion to heating to provide a molten polymer and thermolytic fission of the precursor, generating the inclusions dispersed in the molten polymer.
摘要翻译：本发明涉及一种制备含有纳米级无机夹杂物的复合聚合材料的方法，包括以下步骤：将聚合物与热分解前体混合以提供所述至少一种前体和所述至少一种聚合物的均匀分散体; 使所述均匀分散体加热以提供熔融聚合物和前体的热解裂变，产生分散在熔融聚合物中的夹杂物。

2. 发明申请

US20060121262A1 Process for the preparation of a composite polymeric material 有权
标题翻译：制备复合聚合材料的方法
公开(公告)号：US20060121262A1
公开(公告)日：2006-06-08
申请号：US11267955
申请日：2005-11-04
申请人： Raffaele Vecchione , Gianfranco Carotenuto , Valeria Casuscelli , Floriana Esposito , Salvatore Leonardi , Luigi Nicolais , Maria Volpe
发明人： Raffaele Vecchione , Gianfranco Carotenuto , Valeria Casuscelli , Floriana Esposito , Salvatore Leonardi , Luigi Nicolais , Maria Volpe
IPC分类号： D04H1/00
CPC分类号： D01F1/10 , C08K5/0091 , C08L21/00 , Y10T428/249924
摘要： The present invention relates to a process for the preparation of a composite polymeric material containing nanometric inorganic inclusions comprising the steps of: mixing a polymer with a thermolytic precursor to provide a homogeneous dispersion of said at least one precursor and of said at least one polymer; subjecting said homogeneous dispersion to heating to provide a molten polymer and thermolytic fission of the precursor, generating the inclusions dispersed in the molten polymer.
摘要翻译：本发明涉及一种制备含有纳米级无机夹杂物的复合聚合材料的方法，包括以下步骤：将聚合物与热分解前体混合以提供所述至少一种前体和所述至少一种聚合物的均匀分散体; 使所述均匀分散体加热以提供熔融聚合物和前体的热解裂变，产生分散在熔融聚合物中的夹杂物。

3. 发明授权

US08852826B2 Porous composite product for the production of a catalytic layer, in particular in fuel cell electrodes 有权
标题翻译：用于生产催化剂层的多孔复合材料，特别是在燃料电池电极中
公开(公告)号：US08852826B2
公开(公告)日：2014-10-07
申请号：US12126082
申请日：2008-05-23
申请人： Raffaele Vecchione , Salvatore Leonardi , Giuseppe Mensitieri , Anna Borriello
发明人： Raffaele Vecchione , Salvatore Leonardi , Giuseppe Mensitieri , Anna Borriello
IPC分类号： H01M8/10 , H01B1/12 , H01B1/04 , H01M4/92 , H01M8/02
CPC分类号： H01B1/124 , H01B1/04 , H01M4/921 , H01M4/926 , H01M8/0289 , H01M8/1004 , H01M8/1007 , H01M2008/1095 , Y02E60/521 , Y02P70/56
摘要： A composite product is for an electrode of a fuel cell including a catalyst, an electrically conductive phase which supports such catalyst, a protonically conductive phase, and a porous phase. At least the contact between the catalyst and the electrically and protonically conductive phases, and preferably also the contact of the porous phase with the catalyst and with the electrically and protonically conductive phases, is improved or maximized. Each of the phases is individually continuous, and such phases are continuous with each other.
摘要翻译：复合产品用于包括催化剂，支持这种催化剂的导电相，质子导电相和多孔相的燃料电池的电极。至少催化剂与电和质子导电相之间的接触，以及优选多孔相与催化剂以及电和质子导电相的接触被改善或最大化。每个相是单独连续的，并且这些相是彼此连续的。

4. 发明申请

US20080292934A1 POROUS COMPOSITE PRODUCT FOR THE PRODUCTION OF A CATALYTIC LAYER, IN PARTICULAR IN FUEL CELL ELECTRODES 有权
标题翻译：用于生产催化层的多孔复合材料，特别是燃料电池
公开(公告)号：US20080292934A1
公开(公告)日：2008-11-27
申请号：US12126082
申请日：2008-05-23
申请人： Raffaele Vecchione , Salvatore Leonardi , Giuseppe Mensitieri , Anna Borriello
发明人： Raffaele Vecchione , Salvatore Leonardi , Giuseppe Mensitieri , Anna Borriello
IPC分类号： H01M8/10 , H01B1/12
CPC分类号： H01B1/124 , H01B1/04 , H01M4/921 , H01M4/926 , H01M8/0289 , H01M8/1004 , H01M8/1007 , H01M2008/1095 , Y02E60/521 , Y02P70/56
摘要： A composite product is for an electrode of a fuel cell including a catalyst, an electrically conductive phase which supports such catalyst, a protonically conductive phase, and a porous phase. At least the contact between the catalyst and the electrically and protonically conductive phases, and preferably also the contact of the porous phase with the catalyst and with the electrically and protonically conductive phases, is improved or maximized. Each of the phases is individually continuous, and such phases are continuous with each other.
摘要翻译：复合产品用于包括催化剂，支持这种催化剂的导电相，质子导电相和多孔相的燃料电池的电极。至少催化剂与电和质子导电相之间的接触，以及优选多孔相与催化剂以及电和质子导电相的接触被改善或最大化。每个相是单独连续的，并且这些相是彼此连续的。

5. 发明授权

US08575720B2 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
标题翻译：用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺
公开(公告)号：US08575720B2
公开(公告)日：2013-11-05
申请号：US11803716
申请日：2007-05-14
申请人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
发明人： Salvatore Leonardi , Salvatore Coffa , Claudia Caligiore , Francesca Paola Tramontana
IPC分类号： H01L27/08
CPC分类号： H01L21/84 , H01L27/12
摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
摘要翻译：描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。该方法包括：将保护电介质层沉积在惰性衬底上; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。还描述了通过该方法获得的集成装置。

6. 发明授权

US07952104B2 Thin-film transistor (TFT) device 有权
标题翻译：薄膜晶体管（TFT）器件
公开(公告)号：US07952104B2
公开(公告)日：2011-05-31
申请号：US12564719
申请日：2009-09-22
申请人： Salvatore Leonardi , Claudia Caligiore
发明人： Salvatore Leonardi , Claudia Caligiore
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02686 , H01L21/02488 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.
摘要翻译：一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

7. 发明申请

US20100163759A1 RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS 审中-公开
标题翻译：带有光电转换器的辐射传感器集成在半导体衬底和相应的集成工艺
公开(公告)号：US20100163759A1
公开(公告)日：2010-07-01
申请号：US12649256
申请日：2009-12-29
申请人： Maria Eloisa Castagna , Salvatore Leonardi , Salvatore Abbisso , Lidia Maddiona
发明人： Maria Eloisa Castagna , Salvatore Leonardi , Salvatore Abbisso , Lidia Maddiona
IPC分类号： H01L31/14 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/18 , G01J1/0488 , G01J1/4204 , G01J1/4228 , H01L27/1443 , H01L31/02165
摘要： An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.
摘要翻译：实施例涉及集成在半导体衬底上并包括至少一个第一和第二光电二极管的传感器，该至少一个第一和第二光电二极管包括在这种半导体衬底中形成的至少一个第一和一个第二pn结，以及至少一个第一和第二反射防止涂层这样的第一和第二光电二极管的顶部。这种第一和第二光电二极管的至少一个抗反射涂层包括至少一个第一和第二不同的抗反射层，以制造双层抗反射涂层，其适合于为相应的光电二极管获得在入射到其上的光信号的预定波长的响应峰传感器。实施例还涉及这种传感器以及由这种传感器制成的环境光传感器的集成过程。

8. 发明申请

US20070148527A1 FUEL CELL PLANARLY INTEGRATED ON A MONOCRYSTALLINE SILICON CHIP AND PROCESS OF FABRICATION 有权
标题翻译：燃料电池平面集成在单晶硅芯片和制造工艺
公开(公告)号：US20070148527A1
公开(公告)日：2007-06-28
申请号：US11611521
申请日：2006-12-15
申请人： Simone Siciliano , Luigi La Magna , Salvatore Leonardi
发明人： Simone Siciliano , Luigi La Magna , Salvatore Leonardi
IPC分类号： H01M8/02 , H01M4/86 , H01M4/88 , B05D5/12 , C25D5/02 , C25D3/00
CPC分类号： H01M8/1097 , H01M8/0271 , H01M8/04089 , H01M8/241 , H01M8/2425 , H01M2008/1095
摘要： A fuel cell is entirely fabricated on a single monocrystalline silicon substrate, and substantially overcomes leak proofing and wafer bonding difficulties and criticalities while ensuring an intrinsic sturdiness of the planarly integrated functional structure of the fuel cell. The integrated fuel cell is formed in an oxidized porous silicon region on a monocrystalline silicon substrate that is pervious to fluid flow and is electrically nonconductive with the monocrystalline silicon substrate.
摘要翻译：燃料电池完全制造在单个单晶硅衬底上，并且基本上克服了防漏和晶片接合困难和临界，同时确保燃料电池的平面集成的功能结构的内在坚固性。集成的燃料电池形成在单晶硅衬底上的氧化的多孔硅区域中，该单晶硅衬底可渗透流体流动并且与单晶硅衬底不导电。

9. 发明申请

US20070034872A1 Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process 有权
标题翻译：用于制造薄膜晶体管（TFT）器件和通过该工艺制造的TFT器件的工艺
公开(公告)号：US20070034872A1
公开(公告)日：2007-02-15
申请号：US11478332
申请日：2006-06-28
申请人： Salvatore Leonardi , Claudia Caligiore
发明人： Salvatore Leonardi , Claudia Caligiore
IPC分类号： H01L29/04
CPC分类号： H01L21/02686 , H01L21/02488 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.
摘要翻译：一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

10. 发明授权

US06815795B2 High voltage resistive structure integrated on a semiconductor substrate 有权
标题翻译：集成在半导体衬底上的高电压电阻结构
公开(公告)号：US06815795B2
公开(公告)日：2004-11-09
申请号：US10420386
申请日：2003-04-21
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2900
CPC分类号： H01L21/76208 , H01L21/761 , H01L27/0802
摘要： A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least two parallel portions of the serpentine region, there is at least one trench filled with an insulating material.

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