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    • 6. 发明申请
    • CIRCUIT ARRANGEMENT FOR IMPEDANCE COMPENSATION
    • 电路阻抗补偿
    • WO0173940A3
    • 2004-11-11
    • PCT/DE0101093
    • 2001-03-16
    • FORSCH APPLIKATIONSLABOR PLASMSTEPHAN ULFKUSKE JUERGENSCHADE KLAUS
    • STEPHAN ULFKUSKE JUERGENSCHADE KLAUS
    • H01J37/32
    • H01J37/32082H01J37/32183
    • The invention relates to a circuit arrangement for impedance compensation. The inventive arrangement can be used in devices for the plasma-supported surface treatment in vacuum chambers. The aim of the invention is to simply and cost-effectively compensate for the plasma impedance, especially in the high-frequency range, for preventing power losses and providing a sufficiently high voltage for igniting low-pressure gas discharges on electrodes in vacuum chambers. Large sized electrode surfaces for correspondingly large size substrates are used for surface treatment. According to the invention, the circuit arrangement for impedance compensation has at least one electrode that is arranged in a vacuum chamber and is connected to an HF generator by means of a line or a line system for feeding power and generating low-pressure gas discharges. A two- or four-terminal network respectively is connected to each power feeding point, whereby one terminal is applied at a two-terminal network or earth potential is applied to two terminals of a four-terminal network.
    • 本发明涉及一种用于阻抗补偿的电路装置,它可以在用于在真空室等离子辅助表面处理设备来使用。 目的,根据本发明的等离子体的阻抗,可在特定也在高频范围内,以避免功率损失和提供用于低压气体放电的点火到在真空室可用电极足够高的电压,补偿,容易且廉价地其中,用于提供对应表面加工大型电极表面 要使用的大尺寸基板。 根据本发明,有至少一个布置在所述电路,用于在真空室中的电极,它是由一个线或用于功率输入并生成低压气体放电管线系统的装置连接到RF发生器阻抗补偿,每个在每个馈电点连接的两个或四个终端网络。 其中一个极被施加到二端网络或一个四极接地电位的两极。
    • 7. 发明申请
    • DEVICE FOR THE PLASMA-MEDIATED WORKING OF SURFACES ON PLANAR SUBSTRATES
    • DEVICE FOR表面平面基板等离子为基础的治疗
    • WO02056338A3
    • 2003-04-17
    • PCT/DE0200170
    • 2002-01-16
    • FORSCH APPLIKATIONSLABOR PLASMKUSKE JUERGENSTEPHAN ULFKOTTWITZ ALFREDSCHADE KLAUS
    • KUSKE JUERGENSTEPHAN ULFKOTTWITZ ALFREDSCHADE KLAUS
    • H05H1/46C23C16/509H01J37/32H01L21/205H01L21/3065H01L21/00
    • H01J37/32082H01J37/32577H01J37/32743
    • The invention relates to a device for the plasma-mediated working of surfaces on planar substrates, whereby the plasma can be obtained by low-pressure gas discharges in the HF/VHF range. A modification of the surfaces, for example so-called dry-etching, can be achieved with said working and also the formation of thin layers on the substrate surfaces. The aim of the invention is to provide an economical device, whereby substrate surfaces of relatively large format may be worked at elevated frequency, preferably in the frequency range above 30MHz. Said aim is achieved, whereby a planar electrode is arranged in a chamber and electrically connected to a high frequency generator. Within the chamber at least one mass tunnel of electrically conducting material is provided. A discharge chamber is formed in said mass tunnel, enclosed with up to two opposing slots. A simple substrate or a substrate with a substrate support may be introduced and withdrawn in a translatory manner through said slots. A process gas feed and process gas exhaust are further connected to the discharge chamber, such that a process-specific pressure differential can be fixed relative to the chamber volume of the vacuum chamber, due to the slots being partly closed by the substrate or the substrate support during working.
    • 本发明涉及一种用于平面Oberlfächen的Sustrate等离子体辅助处理的装置,其中,所述等离子体可以通过低压气体放电在HF / VHF区域来获得。 利用这样的处理可以是表面的变形,例如,所谓的干式蚀刻,也薄层完成的衬底表面上形成。 广告根据在升高的频率具有相对大尺寸的基材表面的廉价的装置中,优选在所述频率范围在30MHz以上可以加工,提供。 为此,设置在扁平电极,其导电地连接到一个高频发生器的腔室时,其特征在于,导电材料的至少一个质量隧道设置在腔室之内。 在这个质量隧道一到两个相对设置的槽关闭形成放电空间。 通过槽单独一个基板或基片可以与基板载体一起平移拧紧和移出。 到放电空间中,工艺气体喷射和工艺气体出口也连接,一个真空室处理特定压力差的腔室容积相反可以与通过在处理槽衬底或衬底支撑部分vorshclossenen连接进行设置。