会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Gap-fill methods
    • 间隙填充方法
    • US09558987B2
    • 2017-01-31
    • US14582149
    • 2014-12-23
    • Rohm and Haas Electronic Materials LLCDow Global Technologies LLCRohm and Haas Electronic Materials Korea Ltd.
    • Jae Hwan SimJin Hong ParkJae-Bong LimJung Kyu JoCheng-Bai XuJong Keun ParkMingqi LiPhillip D. Hustad
    • H01L21/31H01L21/762H01L21/3105
    • H01L21/76224H01L21/31058
    • Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.
    • 间隙填充方法包括:(a)在衬底的表面上提供具有浮雕图像的半导体衬底,所述浮雕图像包括要填充的多个间隙; (b)在所述浮雕图像上施加间隙填充组合物,其中所述间隙填充组合物包含非交联的可交联聚合物,酸催化剂,交联剂和溶剂,其中所述可交联聚合物包含以下通用物质的第一单元 式(I):其中:R 1选自氢,氟,C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式(II)的第二单元:其中:R 3选自氢,氟,C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链,支链或环状烷基,以及任选含有杂原子的任选取代的C 6至C 15芳基,其中至少一个氢原子被独立地选自羟基,羧基,硫醇, 胺,环氧,烷氧基,酰胺和乙烯基; 和(c)在一定温度下加热间隙填充组合物以使聚合物交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。