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1. 发明授权

US09558987B2 Gap-fill methods 有权
标题翻译：间隙填充方法
公开(公告)号：US09558987B2
公开(公告)日：2017-01-31
申请号：US14582149
申请日：2014-12-23
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Jin Hong Park , Jae-Bong Lim , Jung Kyu Jo , Cheng-Bai Xu , Jong Keun Park , Mingqi Li , Phillip D. Hustad
IPC分类号： H01L21/31 , H01L21/762 , H01L21/3105
CPC分类号： H01L21/76224 , H01L21/31058
摘要： Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.
摘要翻译：间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇，胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

2. 发明申请

US20170153547A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST 审中-公开
公开(公告)号：US20170153547A1
公开(公告)日：2017-06-01
申请号：US15363533
申请日：2016-11-29
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Jung Kyu Jo , EunHye Cho , Hye-Won Lee , Jin Hong Park , Eui-Hyun Ryu , Jae-Bong Lim
IPC分类号： G03F7/09 , C08G63/78 , C08G63/685 , C09D167/00 , C08F220/18 , G03F7/32 , C08F220/32 , C09D133/14 , C08F220/30 , G03F7/16 , G03F7/20 , C09D5/00 , C09D133/08
摘要： In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

3. 发明申请

US20170283651A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST 审中-公开
公开(公告)号：US20170283651A1
公开(公告)日：2017-10-05
申请号：US15088091
申请日：2016-03-31
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Hye-Won Lee , Eunhye Cho , Jung Kyu Jo , Jin Hong Park , Eui Hyun Ryu , Jae-Bong Lim
IPC分类号： C09D175/08 , G03F7/16 , G03F7/09
摘要： Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

4. 发明授权

US11086220B2 Underlayer coating compositions for use with photoresists 有权
公开(公告)号：US11086220B2
公开(公告)日：2021-08-10
申请号：US15800040
申请日：2017-10-31
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jung Kyu Jo , Jae Hwan Sim
IPC分类号： G03F7/09 , G03F7/40 , C09D7/20 , C09D5/00 , C09D167/02 , C08G63/685 , C08K5/20 , C08K5/101
摘要： Underlayer coating compositions are provided that comprise 1) a resin; and a solvent component comprising one or more solvents having a boiling of 200° C. or greater. Coating compositions are particularly useful with overcoated photoresist compositions imaged with EUV.

5. 发明申请

US20190129306A1 UNDERLAYER COATING COMPOSITIONS FOR USE WITH PHOTORESISTS 审中-公开
公开(公告)号：US20190129306A1
公开(公告)日：2019-05-02
申请号：US15800040
申请日：2017-10-31
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jung Kyu Jo , Jae Hwan Sim
IPC分类号： G03F7/09 , G03F7/40 , C09D167/02 , C09D5/00 , C09D7/20
摘要： Underlayer coating compositions are provided that comprise 1) a resin; and a solvent component comprising one or more solvents having a boiling of 200° C. or greater. Coating compositions are particularly useful with overcoated photoresist compositions imaged with EUV.

6. 发明授权

US11493845B2 Organic bottom antireflective coating composition for nanolithography 有权
公开(公告)号：US11493845B2
公开(公告)日：2022-11-08
申请号：US14584995
申请日：2014-12-29
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , So-Yeon Kim , Jung Kyu Jo , Hye-Won Lee , Jihoon Kang , Jae-Bong Lim , Jun-Han Yun
IPC分类号： G03F7/09 , C09D5/00 , C09D179/08
摘要： An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.

7. 发明授权

US11262656B2 Coating compositions for use with an overcoated photoresist 有权
公开(公告)号：US11262656B2
公开(公告)日：2022-03-01
申请号：US15088091
申请日：2016-03-31
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Hye-Won Lee , Eunhye Cho , Jung Kyu Jo , Jin Hong Park , Eui Hyun Ryu , Jae-Bong Lim
IPC分类号： C08L67/00 , C08L63/00 , G03F7/11 , C08G73/06 , G03F7/09 , C08L33/08 , C08G63/685 , C09D167/02 , C08G63/183 , C08G63/189 , C08G63/682 , C08F220/14
摘要： Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

8. 发明授权

US10527942B2 Coating compositions for use with an overcoated photoresist 有权
公开(公告)号：US10527942B2
公开(公告)日：2020-01-07
申请号：US15363533
申请日：2016-11-29
申请人： Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Jung Kyu Jo , EunHye Cho , Hye-Won Lee , Jin Hong Park , Eui-Hyun Ryu , Jae-Bong Lim
IPC分类号： G03F7/09 , G03F7/20 , C08L35/06 , G03F7/30 , G03F7/40 , C09D167/02 , C09D125/18 , H01L21/02 , C08F220/34 , H01L21/027 , C08F220/38 , C08F220/26 , H01L21/311 , C08F220/18 , C08F220/30 , C08F220/32 , C08G63/685 , C08G63/78 , C09D5/00 , C09D133/08 , C09D133/14 , C09D167/00 , G03F7/16 , G03F7/32
摘要： In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

9. 发明授权

US09324604B2 Gap-fill methods 有权
标题翻译：间隙填充方法
公开(公告)号：US09324604B2
公开(公告)日：2016-04-26
申请号：US14755471
申请日：2015-06-30
申请人： Rohm and Haas Electronic Materials LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Jae-Bong Lim , Jung Kyu Jo , Bon-ki Ku , Cheng-Bai Xu
IPC分类号： H01L21/31 , H01L21/762 , H01L21/3105
CPC分类号： H01L21/76224 , H01L21/0276 , H01L21/31058
摘要： Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different, a crosslinker, an acid catalyst and a solvent, wherein the gap-fill composition is disposed in the gaps; (c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with the second polymer to form a crosslinked polymer; (d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps; (e) patternwise exposing the photoresist layer to activating radiation; and (f) developing the photoresist layer to form a photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps with an antireflective coating material.
摘要翻译：提供间隙填充方法。所述方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙，其中所述间隙具有50nm或更小的宽度; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含包含可交联基团的第一聚合物，包含发色团的第二聚合物，其中所述第一聚合物和所述第二聚合物不同，交联剂，酸催化剂和溶剂，其中间隙填充组合物设置在间隙中; （c）在温度下加热间隙填充组合物以使第一聚合物与第二聚合物自交联和/或交联以形成交联聚合物; （d）在包含交联聚合物填充间隙的基底上形成光致抗蚀剂层; （e）将光致抗蚀剂层图形化地曝光于激活辐射; 和（f）显影光致抗蚀剂层以形成光致抗蚀剂图案。该方法在用抗反射涂层材料填充高纵横比间隙的半导体器件的制造中特别适用。

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