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    • 4. 发明申请
    • BACK CONTACTED SOLAR CELL
    • 返回接触式太阳能电池
    • WO2008039078A2
    • 2008-04-03
    • PCT/NO2007/000339
    • 2007-09-27
    • RENEWABLE ENERGY CORPORATION ASASAUAR, ErikBENTZEN, Andreas
    • SAUAR, ErikBENTZEN, Andreas
    • H01L31/0224
    • H01L31/02167H01L31/022441H01L31/0682Y02E10/547
    • This invention relates to a cost effective method of producing a back contacted silicon solar cell and the cell made by the method, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer, depositing one or more surface passivation layers on both sides of the substrate, creating openings in the surface passivation layers on the back side of the substrate, depositing a metallic layer covering the entire back side and which fills the openings in the surface passivation layers, and creating openings in the deposited metallic layer such that electric insulated contacts with the doped regions on the back side of the substrate is obtained.
    • 本发明涉及一种制造背面接触式硅太阳能电池的成本有效的方法以及通过该方法制造的电池,其中该方法包括施加掺杂在背面上的硅衬底,晶片或薄膜 在交叉的图案中交替地具有P型和N型导电性,并且可选地在晶片的正面上具有P型或N型层,在衬底的两侧上沉积一个或多个表面钝化层,从而形成 在衬底背面上的表面钝化层中形成开口,沉积覆盖整个背面并填充表面钝化层中的开口的金属层,并且在沉积的金属层中形成开口,使得电绝缘与掺杂 获得衬底背面的区域。
    • 6. 发明申请
    • COATING FOR THIN-FILM SOLAR CELLS
    • 用于薄膜太阳能电池的涂层
    • WO2009154473A2
    • 2009-12-23
    • PCT/NO2009/000227
    • 2009-06-17
    • RENEWABLE ENERGY CORPORATION ASABASORE, Paul, AlanBENTZEN, AndreasSAUAR, Erik
    • BASORE, Paul, AlanBENTZEN, AndreasSAUAR, Erik
    • H01L31/042H01L31/052H01L31/18
    • H01L31/056H01L31/046Y02E10/52
    • This invention relates to a method for producing thin film solar cells with a back-side reflective layer, wherein the solar module is a silicon thin film device placed in-between a back side planar substrate and a front side planar glass superstrate placed in parallel and a distance from the back side planar substrate, wherein the silicon thin film device comprises in successive order from the front side: a front side transparent conductive (TCO) layer, a multi junction thin-film solar conversion layer comprising amorphous and microcrystalline silicon or alloys thereof, a back side TCO-layer, a diffuse reflective layer with one or more local through-going apertures, and a metal layer covering the reflective layer and which is in contact with the back side TCO-layer through the one or more apertures in the reflective layer. The invention also relates to a method for forming the solar cell.
    • 本发明涉及一种具有背面反射层的薄膜太阳能电池的制造方法,其特征在于,太阳能电池组件是设置在背面平面基板与平行放置的前侧平面玻璃盖板之间的硅薄膜元件, 距离背面平面基板的距离,其中所述硅薄膜器件从正面依次依次包括:正面透明导电层(TCO)层,包含非晶和微晶硅或合金的多结薄膜太阳能转换层 背面TCO层,具有一个或多个局部贯通孔的漫反射层和覆盖反射层的金属层,并且通过一个或多个孔中的一个或多个孔与后侧TCO层接触 反射层。 本发明还涉及形成太阳能电池的方法。
    • 10. 发明申请
    • BACK CONTACTING AND INTERCONNECTION OF TWO SOLAR CELLS
    • 两个太阳能电池的反接触和互连
    • WO2010087712A2
    • 2010-08-05
    • PCT/NO2010/000023
    • 2010-01-20
    • RENEWABLE ENERGY CORPORATION ASASAUAR, ErikBENTZEN, Andreas
    • SAUAR, ErikBENTZEN, Andreas
    • H01L31/05
    • H01L31/0682H01L31/022441H01L31/0516H01L31/056H01L31/1864H01L31/1868Y02E10/52Y02E10/547Y02P70/521
    • Method for producing back contacts on silicon solar cells (100) and an interconnection between silicon solar cells (100) where the front surface has been fully treated and the back surface has been processed to the point where the said solar cells (100) can be contacted on the back surface. The method further comprises: a) attaching the solar cells (100) onto a transparent superstrate (104), thereby forming a structure (120) b) depositing a passivating layer (113) onto the back surface of the structure (120) c) depositing a silicon material layer (108) onto the back surface of the structure (120) d) separating the silicon material layer (108) by first areas (C) e) providing contact sites in areas (B) f) depositing a metal layer (109) onto the back surface of the structure (120) g) heating the structure (120) to form silicide (110) h) optionally opening the metal layer (109) in areas (C) i) depositing metal (112) onto the silicide (110) Device comprising solar cells (100) with back contacts and interconnections produced by the method.
    • 用于在硅太阳能电池(100)上产生背接触的方法以及其中前表面已被完全处理并且后表面已经被处理到所述太阳能电池(100)可以是这样的点的硅太阳能电池(100)之间的互连 在背面接触。 该方法还包括:a)将太阳能电池(100)附着到透明的覆层(104)上,从而形成结构(120)b)将沉积层(113)沉积到结构(120)的背面上c) 将硅材料层(108)沉积到结构(120)的背面上d)将硅材料层(108)分离第一区域(C),e)在区域(B)中提供接触部位,f)沉积金属层 (120)的后表面上加热结构(120),以形成硅化物(110),h)在区域(C)中可选地打开金属层(i),i)将金属(112)沉积到 硅化物(110)装置包括具有背接触的太阳能电池(100)和通过该方法产生的互连。